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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Collector Emitter Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDFM2N111 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdfm2n111-datasheets-4275.pdf | 20V | 4A | 6-WDFN Exposed Pad | 3mm | 750μm | 3mm | Lead Free | 6 | 16 Weeks | 165.33333mg | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e4 | Nickel/Palladium (Ni/Pd) | DUAL | Single | 1.7W | 1 | FET General Purpose Power | 6 ns | 7ns | 7 ns | 11 ns | 4A | 12V | SILICON | SWITCHING | 1.7W Ta | 2V | 4A | 20V | N-Channel | 273pF @ 10V | 100m Ω @ 4A, 4.5V | 1.5V @ 250μA | 4A Ta | 3.8nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| PSMN3R3-40MLHX | Nexperia USA Inc. | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn3r340mlhx-datasheets-4280.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 40V | 101W Ta | N-Channel | 3794pF @ 20V | 3.3m Ω @ 25A, 10V | 2.15V @ 1mA | 118A Ta | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM088NA03CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm088na03crrlg-datasheets-4244.pdf | 8-PowerTDFN | 28 Weeks | 8-PDFN (5x6) | 30V | 56W Tc | N-Channel | 750pF @ 15V | 8.8mOhm @ 13A, 10V | 2.5V @ 250μA | 61A Tc | 12.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6312 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 5 | 18 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 50W Tc | 130A | 260A | 0.0025Ohm | 32 mJ | N-Channel | 3100pF @ 15V | 1.85m Ω @ 20A, 10V | 2.2V @ 250μA | 85A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT43M8LFV-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 22 Weeks | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.25W Ta | N-Channel | 3213pF @ 20V | 4m Ω @ 20A, 10V | 2.5V @ 250μA | 87A Tc | 44.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6005LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6005lfg13-datasheets-4172.pdf | 8-PowerVDFN | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.98W Ta 62.5W Tc | N-Channel | 3150pF @ 30V | 4.1m Ω @ 20A, 10V | 2.5V @ 250μA | 18A Ta 100A Tc | 48.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6009LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.8W Ta 136W Tc | N-Channel | 1925pF @ 30V | 10m Ω @ 20A, 10V | 2V @ 250μA | 11.76A Ta 89.5A Tc | 33.5nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H015LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth10h015lk313-datasheets-4291.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 52.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.1W Ta | 37.1A | 50A | 0.018Ohm | 85 mJ | N-Channel | 1871pF @ 50V | 15m Ω @ 20A, 10V | 3.5V @ 250μA | 52.5A Ta | 33.3nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMP7A17KQTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp7a17kqtc-datasheets-4216.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3.8A | 70V | 2.11W Ta | P-Channel | 635pF @ 40V | 160m Ω @ 2.1A, 10V | 1V @ 250μA (Min) | 3.8A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120NTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr120ntrpbf-datasheets-1519.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 48W Tc | TO-252AA | 10A | 35A | 0.225Ohm | 85 mJ | N-Channel | 440pF @ 25V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| AOI409 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aoi409-datasheets-7198.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | yes | EAR99 | SINGLE | 3 | 1 | R-PSIP-T3 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 60W Tc | 80A | 0.055Ohm | 34 mJ | P-Channel | 3600pF @ 30V | 40m Ω @ 20A, 10V | 2.4V @ 250μA | 26A Tc | 54nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ISP12DP06NMXTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-4, TO-261AA | 10 Weeks | 60V | 1.8W Ta 4.2W Tc | P-Channel | 790pF @ 30V | 125m Ω @ 2.8A, 10V | 4V @ 520μA | 2.8A Ta | 20.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR420TRL-GE3 | Vishay Siliconix | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 500V | 2.5W Ta 42W Tc | N-Channel | 360pF @ 25V | 3Ohm @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT47M2SFVWQ-7 | Diodes Incorporated | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt47m2sfvwq13-datasheets-4148.pdf | 8-PowerVDFN | 21 Weeks | e3 | Matte Tin (Sn) | 40V | 2.67W Ta 27.1W Tc | N-Channel | 897pF @ 20V | 7.5m Ω @ 20A, 10V | 4V @ 250μA | 15.4A Ta 49.1A Tc | 12.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C65NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerWDFN | 18 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVGS3441T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | SOT-23-6 | Lead Free | 2 Weeks | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 500mW | 6 | Single | Other Transistors | 13 ns | 23.5ns | 24 ns | 27 ns | 1.65A | 8V | 20V | 3.3A | -20V | P-Channel | 480pF @ 5V | 90m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 1.65A Ta | 14nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP4A16GQTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-261-4, TO-261AA | 15 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 260 | 30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA66DN-T1-GE3 | Vishay Siliconix | $2.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa66dnt1ge3-datasheets-4203.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 30V | 52W Tc | N-Channel | 3014pF @ 15V | 2.3mOhm @ 15A, 10V | 2.2V @ 1mA | 40A Tc | 66nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20P04M1,RQ(S | Toshiba Semiconductor and Storage | $2.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DPAK | 985pF | 2.7ns | 5.1 ns | 20A | 20V | 40V | 27W Tc | N-Channel | 985pF @ 10V | 29mOhm @ 10A, 10V | 2.3V @ 100μA | 20A Ta | 15nC @ 10V | 29 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3447CDV-T1-E3 | Vishay Siliconix | $3.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3447cdvt1e3-datasheets-4184.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 15 Weeks | 19.986414mg | Unknown | 6 | No | 1 | Single | 2W | 1 | 6-TSOP | 910pF | 20 ns | 40ns | 20 ns | 35 ns | -7.8A | 8V | 12V | 12V | -1V | 2W Ta 3W Tc | 36mOhm | -12V | P-Channel | 910pF @ 6V | -1 V | 36mOhm @ 6.3A, 4.5V | 1V @ 250μA | 7.8A Tc | 30nC @ 8V | 36 mΩ | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IPU80R2K4P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r2k4p7akma1-datasheets-4210.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 22W Tc | 5.3A | 4 mJ | N-Channel | 150pF @ 500V | 2.4 Ω @ 800mA, 10V | 3.5V @ 40μA | 2.5A Tc | 7.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8066-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 2.1ns | 2.3 ns | 11A | 20V | 30V | 1W Ta | N-Channel | 1100pF @ 10V | 16m Ω @ 5.5A, 10V | 2.3V @ 100μA | 11A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT15H067SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt15h067sss13-datasheets-4212.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 150V | 1.3W Ta | N-Channel | 425pF @ 75V | 67m Ω @ 4.1A, 10V | 4V @ 250μA | 4.5A Ta 13A Tc | 6.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS6H850NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs6h850nlwftag-datasheets-1176.pdf | 8-PowerWDFN | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.9W Ta 73W Tc | N-Channel | 1450pF @ 40V | 8.6m Ω @ 10A, 10V | 2V @ 70μA | 14.8A Ta 64A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU3N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihu3n50dge3-datasheets-3951.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 13 Weeks | 329.988449mg | 3 | No | 1 | Single | 1 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 5V | SILICON | DRAIN | SWITCHING | 500V | 500V | 69W Tc | 3A | 5.5A | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMT6005LFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6005lfg13-datasheets-4172.pdf | 8-PowerVDFN | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 60V | 1.98W Ta 62.5W Tc | N-Channel | 3150pF @ 30V | 4.1m Ω @ 20A, 10V | 2.5V @ 250μA | 18A Ta 100A Tc | 48.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOL1454G | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 3-PowerSMD, Flat Leads | 18 Weeks | 40V | 6.2W Ta 52W Tc | N-Channel | 1480pF @ 20V | 5.9m Ω @ 20A, 10V | 2.5V @ 250μA | 25A Ta 46A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFMA2P029Z-F106 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfma2p029zf106-datasheets-4176.pdf | 6-VDFN Exposed Pad | 6 | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | YES | DUAL | NO LEAD | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.4W Ta | MO-229VCCC | 3.1A | 0.095Ohm | 150 pF | P-Channel | 720pF @ 10V | 95m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A Ta | 10nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3709ztrrpbf-datasheets-4051.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Tc | TO-252AA | 30A | 340A | 0.0065Ohm | 100 mJ | N-Channel | 2330pF @ 15V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMT47M2SFVWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt47m2sfvwq13-datasheets-4148.pdf | 8-PowerVDFN | 21 Weeks | e3 | Matte Tin (Sn) | 40V | 2.67W Ta 27.1W Tc | N-Channel | 897pF @ 20V | 7.5m Ω @ 20A, 10V | 4V @ 250μA | 15.4A Ta 49.1A Tc | 12.1nC @ 10V | 10V | ±20V |
