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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP50R350CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r350cpxksa1-datasheets-8096.pdf | TO-220-3 | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 550V | 500V | 89W Tc | TO-220AB | 10A | 22A | 0.35Ohm | 246 mJ | N-Channel | 1020pF @ 100V | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 10A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVMFS5C612NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c612nlaft3g-datasheets-7806.pdf | 8-PowerTDFN, 5 Leads | 11 Weeks | 60V | 3.8W Ta 167W Tc | N-Channel | 6660pF @ 25V | 1.36m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 250A Tc | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0456DPB-00#J5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjk0456dpb00j5-datasheets-8105.pdf | SC-100, SOT-669 | Lead Free | 16 Weeks | 5 | yes | No | 5 | 65W | 1 | 14 ns | 6.8ns | 8 ns | 34 ns | 50A | 20V | 40V | 65W Tc | N-Channel | 3000pF @ 10V | 3.2m Ω @ 25A, 10V | 50A Ta | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7734PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfs7734trlpbf-datasheets-6080.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 20 ns | 123ns | 100 ns | 124 ns | 183A | 20V | 75V | 290W Tc | N-Channel | 10150pF @ 25V | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 183A Tc | 270nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FCP260N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcp260n65s3-datasheets-8115.pdf | TO-220-3 | 13 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 90W Tc | N-Channel | 1010pF @ 400V | 260m Ω @ 6A, 10V | 4.5V @ 1.2mA | 12A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0656DPB-00#J5 | Renesas Electronics America | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0656dpb00j5-datasheets-8122.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | No SVHC | 5 | yes | No | SINGLE | GULL WING | 5 | 65W | 1 | R-PSSO-G4 | 16 ns | 9ns | 12 ns | 36 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 65W Tc | N-Channel | 3000pF @ 10V | 5.6m Ω @ 20A, 10V | 40A Ta | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AON6162 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 60V | 215W Tc | N-Channel | 4850pF @ 30V | 2.1m Ω @ 20A, 10V | 3.2V @ 250μA | 100A Tc | 100nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN0550N3-G-P013 | Microchip Technology | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn0550n3g-datasheets-1833.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 10 ns | 15ns | 10 ns | 10 ns | 50mA | 20V | SILICON | SWITCHING | 500V | 500V | 1W Tc | 0.05A | 5 pF | N-Channel | 55pF @ 25V | 60 Ω @ 50mA, 10V | 4V @ 1mA | 50mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RJK1056DPB-00#J5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjk1056dpb00j5-datasheets-8045.pdf | SC-100, SOT-669 | Lead Free | 16 Weeks | No SVHC | 5 | yes | EAR99 | No | 5 | 65W | 1 | 16 ns | 4.5ns | 6.5 ns | 36 ns | 25A | 20V | 100V | 65W Tc | N-Channel | 3000pF @ 10V | 14m Ω @ 12.5A, 10V | 25A Ta | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA70N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 150W Tc | N-Channel | 2725pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 250μA | 70A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L09ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s2l09atma2-datasheets-8048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 10 ns | 19ns | 18 ns | 53 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 190W Tc | 0.011Ohm | N-Channel | 2620pF @ 25V | 8.2m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FCP380N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-fcp380n60e-datasheets-8054.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 106W | 1 | FET General Purpose Power | 17 ns | 9ns | 10 ns | 64 ns | 10.2A | 20V | 2.5V | 106W Tc | 600V | N-Channel | 1770pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AOW15S60 | Alpha & Omega Semiconductor Inc. | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | No | 208W | 1 | 15A | 600V | 208W Tc | N-Channel | 717pF @ 100V | 290m Ω @ 7.5A, 10V | 3.8V @ 250μA | 15A Tc | 15.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C426NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c426nt3g-datasheets-8166.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 250μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irl3803strlpbf-datasheets-5116.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 200W Tc | 140A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IPA50R350CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa50r350cpxksa1-datasheets-7984.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 32W Tc | TO-220AB | 10A | 22A | 0.35Ohm | 246 mJ | N-Channel | 1020pF @ 100V | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 10A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPA06N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa06n60c3xksa1-datasheets-8088.pdf | TO-220-3 Full Pack | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 32W Tc | TO-220AB | 6.2A | 18.6A | 0.75Ohm | 200 mJ | N-Channel | 620pF @ 25V | 750m Ω @ 3.9A, 10V | 3.9V @ 260μA | 6.2A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RQ3P300BETB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 5 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2W Ta 32W Tc | 36A | 40A | 0.021Ohm | 39 mJ | N-Channel | 1250pF @ 50V | 21m Ω @ 10A, 10V | 4V @ 200μA | 10A Ta 36A Tc | 19.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS4D4N08C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerTDFN | 20 Weeks | 68.1mg | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 125W Tc | N-Channel | 4090pF @ 40V | 4.3m Ω @ 44A, 10V | 4V @ 250μA | 123A Tc | 56nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCX120N20 | ROHM Semiconductor | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohm-rcx120n20-datasheets-8171.pdf | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | 3 | EAR99 | No | SINGLE | 3 | 1 | 1 | 20 ns | 33ns | 11 ns | 27 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2.23W Ta 40W Tc | TO-220AB | 48A | 200V | N-Channel | 740pF @ 25V | 325m Ω @ 6A, 10V | 5.25V @ 1mA | 12A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK12A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.35nF | 22ns | 15 ns | 12A | 30V | 500V | 45W Tc | N-Channel | 1350pF @ 25V | 520mOhm @ 6A, 10V | 4V @ 1mA | 12A Ta | 25nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 60W Tc | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 4V @ 25μA | 800mA Tj | 14.6nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ24G | Vishay Siliconix | $2.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz24gpbf-datasheets-1443.pdf | TO-220-3 Full Pack, Isolated Tab | 21 Weeks | 3 | No | TO-220-3 | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 37W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT480L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot480l-datasheets-8174.pdf | TO-220-3 | 16 Weeks | 333W | 1 | FET General Purpose Power | 180A | 25V | Single | 80V | 1.9W Ta 333W Tc | N-Channel | 7820pF @ 40V | 4.5m Ω @ 20A, 10V | 4V @ 250μA | 15A Ta 180A Tc | 140nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P03P4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp80p03p4l04aksa1-datasheets-1642.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 17 ns | 11ns | 40 ns | 140 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 137W Tc | 0.007Ohm | 410 mJ | P-Channel | 11300pF @ 25V | 4.1m Ω @ 80A, 10V | 2V @ 253μA | 80A Tc | 160nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||
| AUIRF7484QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7484qtr-datasheets-8037.pdf | 8-SOIC (0.154, 3.90mm Width) | 26 Weeks | 8 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 9.3 ns | 5ns | 58 ns | 180 ns | 14A | 8V | Single | 40V | 2.5W Ta | N-Channel | 3520pF @ 25V | 10m Ω @ 14A, 7V | 2V @ 250μA | 14A Ta | 100nC @ 7V | 7V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R385CPAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r385cpauma1-datasheets-7868.pdf | 4-PowerTSFN | 4 | 40 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 27A | 0.385Ohm | 227 mJ | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK3R1E04PL,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 | 12 Weeks | 40V | 87W Tc | N-Channel | 4670pF @ 20V | 3.8m Ω @ 30A, 4.5V | 2.4V @ 500μA | 100A Tc | 63.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H801NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs6h801nt1g-datasheets-9854.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | ACTIVE (Last Updated: 2 hours ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 166W Tc | N-Channel | 4120pF @ 40V | 2.8m Ω @ 50A, 10V | 4V @ 250μA | 23A Ta 157A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z20 | Vishay Siliconix | $4.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z20-datasheets-8159.pdf | -50V | -9.7A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 13 Weeks | 6.000006g | 3 | 1 | Single | TO-220AB | 480pF | 8.2 ns | 57ns | 25 ns | 12 ns | 9.7A | 20V | 50V | 40W Tc | 280mOhm | P-Channel | 480pF @ 25V | 280mOhm @ 5.6A, 10V | 4V @ 250μA | 9.7A Tc | 26nC @ 10V | 280 mΩ | 10V | ±20V |
