Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK769R6-80E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk769r680e118-datasheets-9947.pdf | 19.05mm | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.875mm | Black | Metal | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 17.8 ns | 32.7ns | 34.3 ns | 38.6 ns | 75A | 20V | 80V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 182W Tc | 0.0096Ohm | 146 mJ | N-Channel | 4682pF @ 25V | 9.6m Ω @ 20A, 10V | 4V @ 1mA | 75A Tc | 59.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQJ412EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj412ept2ge3-datasheets-0142.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 83W Tc | N-Channel | 5950pF @ 20V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250μA | 32A Tc | 120nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFSW6D1N08HT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6d1n08ht1g-datasheets-3741.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 104W Tc | N-Channel | 2085pF @ 40V | 5.5m Ω @ 20A, 10V | 4V @ 120μA | 17A Ta 89A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC4D9P20X8 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmc4d9p20x8-datasheets-0146.pdf | 8-PowerWDFN | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 20V | 2.4W Ta 40W Tc | P-Channel | 10550pF @ 10V | 4.9m Ω @ 18A, 4.5V | 1.6V @ 250μA | 18A Ta 75A Tc | 109nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S2L13ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-ipd50n06s2l13atma2-datasheets-0147.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 50A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 200A | 0.0167Ohm | 240 mJ | N-Channel | 1800pF @ 25V | 12.7m Ω @ 34A, 10V | 2V @ 80μA | 50A Tc | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120TRRPBF | Vishay Siliconix | $4.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-Pak | 100V | 2.5W Ta 42W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 43ns | 118 ns | 30A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 68W Tc | 60A | 0.028Ohm | 71 mJ | P-Channel | 3950pF @ 10V | 21.8m Ω @ 15A, 10V | 3V @ 1mA | 30A Ta | 80nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R650C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r650c6satma1-datasheets-0158.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | yes | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 12 ns | 9ns | 13 ns | 80 ns | 6.7A | 30V | 650V | SILICON | DRAIN | SWITCHING | 56.8W Tc | 0.65Ohm | N-Channel | 440pF @ 100V | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 6.7A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6005lpsq13-datasheets-0163.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 3.2W Ta 150W Tc | N-Channel | 2962pF @ 30V | 5.5m Ω @ 50A, 10V | 3V @ 250μA | 20.6A Ta 100A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF12N50 | Alpha & Omega Semiconductor Inc. | $6.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 12A | 500V | 28W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRH100P03TB1 | ROHM Semiconductor | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohm-rrh100p03tb1-datasheets-8830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | NOT SPECIFIED | NOT SPECIFIED | 2W | 10A | 30V | 650mW Ta | -30V | P-Channel | 3600pF @ 10V | 12.6m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 39nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ096N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz096n10ls5atma1-datasheets-0172.pdf | 8-PowerTDFN | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 11A | 160A | 0.0096Ohm | 82 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD9N40 | Alpha & Omega Semiconductor Inc. | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | 8A | 400V | 125W Tc | N-Channel | 760pF @ 25V | 800m Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8056-H,LQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 6.2nF | 4.7ns | 7.5 ns | 48A | 20V | 30V | 1.6W Ta 63W Tc | N-Channel | 6200pF @ 10V | 2.2mOhm @ 24A, 10V | 2.3V @ 1mA | 48A Ta | 74nC @ 10V | 2.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3205zstrlpbf-datasheets-3665.pdf | 55V | 75A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | 18 ns | 95ns | 67 ns | 45 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | 440A | 0.0065Ohm | 250 mJ | 55V | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPL60R210P6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r210p6auma1-datasheets-9225.pdf | 4-PowerTSFN | Contains Lead, Lead Free | 4 | 18 Weeks | 4 | yes | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 19.2A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 151W Tc | 52A | 0.21Ohm | N-Channel | 1750pF @ 100V | 210m Ω @ 7.6A, 10V | 4.5V @ 630μA | 19.2A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17305Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17305 | 8 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | Not Qualified | 8.9 ns | 16.5ns | 7.9 ns | 20 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 3.1W Ta | 0.0054Ohm | 304 mJ | 30V | N-Channel | 2600pF @ 15V | 1.1 V | 3.4m Ω @ 30A, 8V | 1.6V @ 250μA | 29A Ta 100A Tc | 18.3nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||
| FDPF6N60ZUT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf6n60zut-datasheets-0051.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 1 | FET General Purpose Power | 19 ns | 25ns | 45 ns | 25 ns | 4.5A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 33.8W Tc | TO-220AB | 2Ohm | N-Channel | 865pF @ 25V | 2 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMC15N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc15n06-datasheets-0028.pdf | 8-PowerWDFN | 3.3mm | 500μm | 3.3mm | 5 | 7 Weeks | 200mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 35W | 1 | FET General Purpose Power | S-PDSO-N5 | 9.5 ns | 36.5ns | 22 ns | 22.5 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 35W Tc | 2.4A | 60A | 0.09Ohm | 36 mJ | 55V | N-Channel | 350pF @ 25V | 900m Ω @ 15A, 10V | 4V @ 250μA | 2.4A Ta 15A Tc | 11.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-100ESQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn8r5100esq-datasheets-0061.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 20 Weeks | 3 | NO | SINGLE | 3 | 263W | 1 | 20 ns | 35ns | 43 ns | 87 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | 429A | 0.0085Ohm | 219 mJ | 100V | N-Channel | 5512pF @ 50V | 8.5m Ω @ 25A, 10V | 4V @ 1mA | 100A Tj | 111nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y1R9-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr420trpbf-datasheets-0074.pdf | 500V | 2.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | 24A | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 500V | NOT SPECIFIED | NOT SPECIFIED | 8.6ns | 2.4A | 2.5W Ta 42W Tc | N-Channel | 360pF @ 25V | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN015-110P,127 | Nexperia USA Inc. | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn015110p127-datasheets-0076.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110V | 110V | 300W Tc | 75A | 240A | 0.015Ohm | 320 mJ | N-Channel | 4900pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R660CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r660cfdatma1-datasheets-0085.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 650V | 62.5W Tc | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5C648NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvd5c648nlt4g-datasheets-0091.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | 60V | 3.1W Ta 72W Tc | N-Channel | 2900pF @ 25V | 4.1m Ω @ 45A, 10V | 2.1V @ 250μA | 18A Ta 89A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430naft1g-datasheets-1229.pdf | 8-PowerTDFN, 5 Leads | 39 Weeks | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW12N50 | Alpha & Omega Semiconductor Inc. | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 12A | 500V | 250W Tc | N-Channel | 1633pF @ 25V | 520m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS65R600E6AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips65r600e6akma1-datasheets-0102.pdf | TO-251-3 Stub Leads, IPak | Contains Lead | 3 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 7.3A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 18A | 0.6Ohm | 142 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 5 | 14 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 110W Tc | 900A | 0.0022Ohm | 493 mJ | N-Channel | 4300pF @ 20V | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 200A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7732S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7732s2tr-datasheets-9905.pdf | DirectFET™ Isometric SC | 3 | 16 Weeks | No SVHC | 7 | EAR99 | No | BOTTOM | 41W | 1 | FET General Purpose Power | R-XBCC-N3 | 123ns | 37 ns | 14A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.5W Ta 41W Tc | 55A | 220A | 0.00695Ohm | 45 mJ | 40V | N-Channel | 1700pF @ 25V | 6.95m Ω @ 33A, 10V | 4V @ 50μA | 14A Ta | 45nC @ 10V | 10V | ±20V |
