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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH9N80 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/ixys-ixfh9n80-datasheets-3591.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 15ns | 35 ns | 70 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 250 ns | 9A | 0.9Ohm | 800V | N-Channel | 2600pF @ 25V | 900m Ω @ 500mA, 10V | 4.5V @ 2.5mA | 9A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STV160NF03LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stv160nf03lt4-datasheets-3571.pdf | 30V | 160A | PowerSO-10 Exposed Bottom Pad | 10 | 12 | EAR99 | DUAL | GULL WING | STV160 | 10 | Single | 210W | 1 | Not Qualified | R-PDSO-G10 | 380ns | 170 ns | 80 ns | 160A | 15V | SILICON | DRAIN | SWITCHING | 210W Tc | 640A | 0.0038Ohm | 1000 mJ | 30V | N-Channel | 4700pF @ 25V | 2.8m Ω @ 80A, 10V | 1V @ 250μA | 160A Tc | 140nC @ 10V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| IXFT50N50P3 | IXYS | $9.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixft50n50p3-datasheets-9577.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 26 Weeks | 3 | unknown | e3 | Matte Tin (Sn) | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP60N25X3M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp60n25x3m-datasheets-3602.pdf | TO-220-3 | 19 Weeks | yes | 250V | 36W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT88N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq88n30p-datasheets-2251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 600W | 1 | R-PSSO-G2 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STB24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb24n60m6-datasheets-3106.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | STB24N | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 17A | 52.5A | 0.19Ohm | 250 mJ | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6524ENJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6524enjtl-datasheets-3579.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 245W Tc | 24A | 72A | 0.185Ohm | 654 mJ | N-Channel | 1650pF @ 25V | 185m Ω @ 11.3A, 10V | 4V @ 750μA | 24A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta3n120hv-datasheets-3615.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 3A | 1200V | 200W Tc | N-Channel | 1100pF @ 25V | 4.5 Ω @ 500mA, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK60S7DPP-E0#T2 | Renesas Electronics America | $14.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk60s7dppe0t2-datasheets-3618.pdf | TO-220-3 Full Pack | Lead Free | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Power | 27 ns | 28ns | 9 ns | 55 ns | 30A | 30V | Single | 600V | 34.7W Tc | N-Channel | 2300pF @ 25V | 125m Ω @ 15A, 10V | 30A Tc | 39nC @ 10V | Super Junction | 10V | +30V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP30N25X3M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp30n25x3m-datasheets-3556.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 250V | 36W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH94N30P3 | IXYS | $10.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 5V | 1040W Tc | TO-247AD | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH96N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh96n20p-datasheets-3565.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 20 Weeks | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 28 ns | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | TO-247AD | 225A | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFQ28N60P3 | IXYS | $5.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq28n60p3-datasheets-3522.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 695W | 1 | FET General Purpose Power | Not Qualified | 27 ns | 18ns | 19 ns | 48 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 695W Tc | 70A | 0.26Ohm | 500 mJ | 600V | N-Channel | 3560pF @ 25V | 260m Ω @ 14A, 10V | 5V @ 2.5mA | 28A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFA4N100Q-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n100q-datasheets-5554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | TO-263 (IXFA) | 1.05nF | 4A | 1000V | 150W Tc | N-Channel | 1050pF @ 25V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 4A Tc | 39nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB16N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb16n90k5-datasheets-3529.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | NOT SPECIFIED | NOT SPECIFIED | 900V | 190W Tc | N-Channel | 1027pF @ 100V | 330m Ω @ 7.5A, 10V | 5V @ 100μA | 15A Tc | 29.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA30N25X3 | IXYS | $5.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20C60W,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 165W Tc | 130mOhm | 600V | N-Channel | 1680pF @ 300V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 155 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHH21N60EF-T1-GE3 | Vishay Siliconix | $4.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh21n60eft1ge3-datasheets-3535.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 19A | 600V | 174W Tc | N-Channel | 2035pF @ 100V | 185m Ω @ 11A, 10V | 4V @ 250μA | 19A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ60N25X3 | IXYS | $8.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa60n25x3-datasheets-4574.pdf | TO-3P-3, SC-65-3 | 19 Weeks | yes | 250V | 320W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH74N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Box | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh74n20p-datasheets-3542.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 34MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | 23 ns | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 4mA | 74A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APT30N60BC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30n60bc6-datasheets-3544.pdf | TO-247-3 | Lead Free | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 219W | 1 | R-PSFM-T3 | 9 ns | 17ns | 48 ns | 74 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 219W Tc | 89A | 636 mJ | N-Channel | 2267pF @ 25V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STB27NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl8dn6lf6ag-datasheets-5453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STB27N | 160W | 1 | FET General Purpose Power | 60 ns | 30ns | 40 ns | 50 ns | 21A | 25V | Single | 600V | 160W Tc | N-Channel | 2400pF @ 50V | 160m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 80nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N25X3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/ixys-ixfp80n25x3-datasheets-1727.pdf | TO-247-3 | 19 Weeks | yes | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6520KNJTL | ROHM Semiconductor | $9.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520knjtl-datasheets-3524.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 231W Tc | 20A | 60A | 0.205Ohm | 444 mJ | N-Channel | 1550pF @ 25V | 205m Ω @ 9.5A, 10V | 5V @ 630μA | 20A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL45N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl45n60dm6-datasheets-3553.pdf | 8-PowerVDFN | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 160W Tc | N-Channel | 110m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH14N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh14n65eft1ge3-datasheets-3508.pdf | 8-PowerTDFN | 4 | 21 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 156W Tc | 36A | 0.271Ohm | 226 mJ | N-Channel | 1749pF @ 100V | 271m Ω @ 7A, 10V | 4V @ 250μA | 15A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| R6024KNJTL | ROHM Semiconductor | $7.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | No SVHC | 3 | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 5V | 245W Tc | 72A | 0.165Ohm | 497 mJ | N-Channel | 2000pF @ 25V | 165m Ω @ 11.3A, 10V | 5V @ 1mA | 24A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RCX510N25 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rcx510n25-datasheets-3322.pdf | TO-220-3 Full Pack | 40W | TO-220FM | 51A | 250V | 40W Tc | 250V | N-Channel | 51A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N70X2 | IXYS | $6.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth12n70x2-datasheets-3520.pdf | TO-247-3 | 15 Weeks | compliant | 700V | 180W Tc | N-Channel | 960pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSJ400N10TL | ROHM Semiconductor | $3.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsj400n10tl-datasheets-2943.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 83 | EAR99 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 25 ns | 80ns | 250 ns | 205 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 1.35W Ta 50W Tc | 80A | 0.03Ohm | 14.6 mJ | N-Channel | 3600pF @ 25V | 27m Ω @ 40A, 10V | 2.5V @ 1mA | 40A Tc | 90nC @ 10V | 4V 10V | ±20V |
