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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NDC651N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndc651n-datasheets-7617.pdf | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 30V | 1.6W Ta | N-Channel | 290pF @ 15V | 60mOhm @ 4A, 10V | 3V @ 250μA | 3.2A Ta | 20nC @ 10V | 4.5V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH10N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh10n90-datasheets-7620.pdf | 900V | 10A | TO-247-3 | Contains Lead | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 12ns | 18 ns | 51 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 40A | 900V | N-Channel | 4200pF @ 25V | 1.1 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDP4060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp4060-datasheets-7624.pdf | TO-220-3 | TO-220-3 | 60V | 50W Tc | N-Channel | 450pF @ 25V | 100mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDH8447 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndh8447-datasheets-7628.pdf | 8-LSOP (0.130, 3.30mm Width) | Contains Lead | 30V | P-Channel | 670pF @ 15V | 53m Ω @ 4.4A, 10V | 3V @ 250μA | 4.4A Ta | 30nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp450-datasheets-7630.pdf | 500V | 14A | TO-3P-3 Full Pack | Lead Free | 3 | 400mOhm | 3 | yes | EAR99 | No | 3 | Single | 190W | 1 | FET General Purpose Power | 47ns | 44 ns | 92 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-247AD | 56A | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NDF0610 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndf0610-datasheets-7635.pdf | -50V | -180mA | TO-226-3, TO-92-3 (TO-226AA) | Contains Lead | 180mA | 60V | P-Channel | 60pF @ 25V | 10 Ω @ 500mA, 10V | 3.5V @ 1mA | 180mA Ta | 1.43nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644S | Vishay Siliconix | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 250V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 125W | D2PAK | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 3.1W Ta 125W Tc | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF520N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1995 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf520n-datasheets-7639.pdf | TO-220-3 | 3 | EAR99 | HIGH RELIABILITY | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 48W Tc | TO-220AB | 9.7A | 38A | 0.2Ohm | 91 mJ | N-Channel | 330pF @ 25V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfh15n60-datasheets-7594.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 350MOhm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 43ns | 40 ns | 70 ns | 20A | 20V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 300W Tc | 250 ns | 80A | 600V | N-Channel | 4500pF @ 25V | 4.5 V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BSS110 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-bss110-datasheets-7645.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 50V | P-Channel | 40pF @ 25V | 10 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl530pbf-datasheets-8562.pdf | 100V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 88W Tc | 160mOhm | 100V | N-Channel | 930pF @ 25V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRF720S | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf720spbf-datasheets-8875.pdf | 400V | 3.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 50W | D2PAK | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 3.1W Ta 50W Tc | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2N7002-7 | Diodes Incorporated | $0.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-2n70027f-datasheets-5418.pdf | 60V | 115mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Contains Lead | 3 | 8.193012mg | No SVHC | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 150mW | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 370mW Ta | 5 pF | 70V | N-Channel | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NDP603AL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp603al-datasheets-7607.pdf | TO-220-3 | TO-220-3 | 30V | 50W Tc | N-Channel | 1100pF @ 15V | 22mOhm @ 25A, 10V | 3V @ 250μA | 25A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840S | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840spbf-datasheets-1527.pdf | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF740S | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740spbf-datasheets-9653.pdf | 400V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF830S | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | 500V | 1.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 3.1W Ta 74W Tc | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF710S | Vishay Siliconix | $5.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 400V | 2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 3.1W Ta 36W Tc | 3.6Ohm | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH10N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100-datasheets-2166.pdf | 1kV | 10A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 62 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | 40A | 1kV | N-Channel | 4000pF @ 25V | 1.2 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH67N10 | IXYS | $82.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh67n10-datasheets-7587.pdf | 100V | 67A | TO-247-3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60ns | 60 ns | 80 ns | 67A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 268A | 0.025Ohm | 100V | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH22N55 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n55-datasheets-7589.pdf | 550V | 22A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 43ns | 40 ns | 70 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 88A | 0.27Ohm | 550V | N-Channel | 4200pF @ 25V | 150ns | 100ns | 270m Ω @ 11A, 10V | 4.5V @ 4mA | 22A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF634S | Vishay Siliconix | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | 250V | 8.1A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 3.1W Ta 74W Tc | 450mOhm | N-Channel | 770pF @ 25V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N60 | IXYS | $62.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n60-datasheets-7594.pdf | 600V | 15A | TO-247-3 | Lead Free | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 43ns | 40 ns | 70 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 60A | 0.05Ohm | 600V | N-Channel | 4500pF @ 25V | 500m Ω @ 500mA, 10V | 4.5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSS100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100V | N-Channel | 60pF @ 25V | 6 Ω @ 220mA, 10V | 2V @ 1mA | 220mA Ta | 2nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK44N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n50-datasheets-7596.pdf | 500V | 44A | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 500V | N-Channel | 8400pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NDP7050 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp7050-datasheets-7597.pdf | TO-220-3 | TO-220-3 | 50V | 150W Tc | N-Channel | 3600pF @ 25V | 13mOhm @ 40A, 10V | 4V @ 250μA | 75A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820pbf-datasheets-8574.pdf | 500V | 2.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 50W | 1 | TO-220AB | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 50W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI840G | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi840gpbf-datasheets-4225.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 14 ns | 22ns | 21 ns | 55 ns | 4.6A | 20V | 500V | 40W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 2.8A, 10V | 4V @ 250μA | 4.6A Tc | 67nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS138TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-bss138ta-datasheets-7345.pdf&product=diodesincorporated-bss138ta-6855035 | 50V | 200mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 7.994566mg | No SVHC | 3.5Ohm | 3 | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | Not Qualified | 20 ns | 10ns | 10 ns | 20 ns | 200mA | 20V | SILICON | SWITCHING | 1.5V | 300mW Ta | 0.2A | 8 pF | 50V | N-Channel | 50pF @ 10V | 1.5 V | 3.5 Ω @ 220mA, 10V | 1.5V @ 250μA | 200mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFH13N50 | IXYS | $3.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n50-datasheets-7571.pdf | 500V | 13A | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 32 ns | 76 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 52A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 13A Tc | 120nC @ 10V | 10V | ±20V |
