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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Segments | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMG3415U-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 3 | yes | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | 260 | 150°C | 40 | 1 | Other Transistors | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.9W | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.0425Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM10N60CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm10n60cic0g-datasheets-5480.pdf | TO-220-3 | NOT SPECIFIED | NOT SPECIFIED | 600V | 166W Tc | N-Channel | 1738pF @ 25V | 750m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 45.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD3055-150T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvd3055150t4g-datasheets-5447.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 20 Weeks | 3.949996g | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | 3 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 11.2 ns | 37.1ns | 23 ns | 12.2 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 28.8W Ta | 9A | 27A | 60V | N-Channel | 280pF @ 25V | 150m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Ta | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| 2N7002E-7-G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2013 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3014SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5 | yes | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | NO LEAD | 260 | 150°C | 40 | 1 | FET General Purpose Power | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 2.1W | 30V | METAL-OXIDE SEMICONDUCTOR | 9A | 0.014Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
| RJK4532DPD-E0#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 450V | 40.3W Tc | N-Channel | 280pF @ 25V | 2.3 Ω @ 2A, 10V | 4.5V @ 1mA | 4A Ta | 9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA1912TE(0)-T1-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa1912te0t1at-datasheets-5458.pdf | SC-95 | yes | compliant | NOT SPECIFIED | 6 | NOT SPECIFIED | 12V | 200mW Ta | P-Channel | 810pF @ 10V | 50m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 4.5A Ta | 5.6nC @ 4V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN337N-F169 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdn337nf169-datasheets-5463.pdf | TO-236-3, SC-59, SOT-23-3 | yes | 30V | 500mW Ta | N-Channel | 300pF @ 10V | 65m Ω @ 2.2A, 4.5V | 1V @ 250μA | 2.2A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-7-F-79 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2013 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2170HWS-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | SC-100, SOT-669 | 40V | 30W Tc | N-Channel | 4650pF @ 10V | 4.2m Ω @ 22.5A, 10V | 3V @ 1mA | 45A Ta | 62nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5030DPD-01#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500V | 41.7W Tc | N-Channel | 550pF @ 25V | 1.6 Ω @ 2A, 10V | 4.5V @ 1mA | 5A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQA0004PXDQS#H1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rqa0004pxdqsh1-datasheets-5416.pdf | TO-243AA | 4 | yes | EAR99 | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | 300mA | Single | 16V | 3W Ta | 0.3A | N-Channel | 900mV @ 1mA | 300mA Ta | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJL6013DPE-WS#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | SC-83 | 600V | 100W Tc | N-Channel | 1400pF @ 25V | 810m Ω @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-7-G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2013 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138TA-79 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS44CA09TQKA | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2057DPA-WS#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 200V | 30W Tc | N-Channel | 1250pF @ 25V | 85m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2033RWS-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SOIC (0.154, 3.90mm Width) | 60V | 2.5W Ta | N-Channel | 740pF @ 10V | 38m Ω @ 4A, 10V | 2.2V @ 1mA | 7A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK1557DPA-WS#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | 8-PowerWDFN | 150V | 30W Tc | N-Channel | 1250pF @ 25V | 58m Ω @ 12.5A, 10V | 4.5V @ 1mA | 25A Ta | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5031DPD-01#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500V | 40.3W Tc | N-Channel | 280pF @ 25V | 3.2 Ω @ 1.5A, 10V | 4.5V @ 1mA | 3A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5117PLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-nvd5117plt4g-datasheets-5442.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 19 Weeks | No SVHC | 3 | LIFETIME (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 4.1W | 1 | Other Transistors | R-PSSO-G2 | 22 ns | 195ns | 132 ns | 50 ns | 11A | 20V | SILICON | DRAIN | 60V | 60V | -1.5V | 4.1W Ta 118W Tc | 80 | 0.022Ohm | 240 mJ | P-Channel | 4.8nF @ 25V | 16m Ω @ 29A, 10V | 2.5V @ 250μA | 11A Ta 61A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| RQHC6140-6DWA#W0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2055DPA-WS#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 200V | 30W Tc | N-Channel | 2400pF @ 25V | 69m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2557DPA-WS#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 250V | 30W Tc | N-Channel | 1250pF @ 25V | 128m Ω @ 8.5A, 10V | 4.5V @ 1mA | 17A Ta | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R1K0C3XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Vendor Undefined | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r1k0c3xk-datasheets-5425.pdf | TO-220-3 | 3 | 6 Weeks | 3 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 89W Tc | TO-220AB | 5.7A | 12A | 1Ohm | 97 mJ | N-Channel | 850pF @ 100V | 1 Ω @ 3.3A, 10V | 3.5V @ 370μA | 5.7A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RJK5006DPD-WS#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500V | 65W Tc | N-Channel | 600pF @ 25V | 1.3 Ω @ 3A, 10V | 4.5V @ 1mA | 6A Ta | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN360P-NBGT003B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdn360pnbgt003b-datasheets-5427.pdf | TO-236-3, SC-59, SOT-23-3 | LAST SHIPMENTS (Last Updated: 1 week ago) | 30V | 500mW Ta | P-Channel | 298pF @ 15V | 80m Ω @ 2A, 10V | 3V @ 250μA | 2A Ta | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS356AP-NB8L005A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Vendor Undefined | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds356apnb8l005a-datasheets-5430.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | 30V | 500mW Ta | P-Channel | 280pF @ 10V | 200m Ω @ 1.3A, 10V | 2.5V @ 250μA | 1.1A Ta | 4.4nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQA0009TXDQS#H1 | Renesas Electronics America | $3.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rqa0009txdqsh1-datasheets-5433.pdf | TO-243AA | yes | EAR99 | compliant | YES | NOT SPECIFIED | 4 | NOT SPECIFIED | FET General Purpose Power | Single | 16V | 15W Tc | 3.2A | N-Channel | 800mV @ 1mA | 3.2A Ta | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UFB4-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesinc-dmn2400ufb47b-datasheets-6561.pdf | DFN | 3 | 40 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | YES | BOTTOM | NO LEAD | 260 | 3 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | 750mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 0.47W | 20V | METAL-OXIDE SEMICONDUCTOR | 0.75A | 0.55Ohm |
