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ContactNVD5117PLT4G
NVD5117PLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVD5117PLT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1315
- Description: NVD5117PLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 19 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 4.1W Ta 118W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 4.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 22 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4.8nF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta 61A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Rise Time | 195ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 132 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | -1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.022Ohm |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 240 mJ |
| Number of Segments | 80 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NVD5117PLT4G Description
NVD5117PLT4G P-channel MOSFET is based on an original, unique vertical structure. NVD5117PLT4G MOSFET results in a dramatic reduction in the on-resistance. NVD5117PLT4G ON Semiconductor is utilized in Automotive High Side Drive, Engine Control, Body Control, as well as Automotive Infotainment.
NVD5117PLT4G Features
AEC-Q101 Qualified
RoHS Compliant
High Current Capability
Low RDS(on)
Avalanche Energy Specified
NVD5117PLT4G Applications
Automotive High Side Drive
Automotive Engine Control
Automotive Body Control
Automotive Infotainment
