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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP44N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 44A | 150V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW29S50 | Alpha & Omega Semiconductor Inc. | $1.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 29A | 500V | 357W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N10S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb180n10s403atma1-datasheets-1456.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G6 | 180A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 720A | 0.0033Ohm | 530 mJ | N-Channel | 10120pF @ 25V | 3.3m Ω @ 100A, 10V | 3.5V @ 180μA | 180A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| R6012ANJTL | ROHM Semiconductor | $5.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Powers | R-PSSO-G2 | 30 ns | 30ns | 35 ns | 90 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | 48A | 0.42Ohm | 9.6 mJ | 600V | N-Channel | 1300pF @ 25V | 420m Ω @ 6A, 10V | 4.5V @ 1mA | 12A Ta | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SPP11N60S5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp11n60s5xksa1-datasheets-1470.pdf | TO-220 | Lead Free | 12 Weeks | 125W | 1 | 130 ns | 35ns | 20 ns | 150 ns | 11A | 20V | 380mOhm | 600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT29S50L | Alpha & Omega Semiconductor Inc. | $1.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 29A | 500V | 357W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF29S50L | Alpha & Omega Semiconductor Inc. | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 29A | 500V | 37.9W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN90P20P | IXYS | $32.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtn90p20p-datasheets-1418.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 38.000013g | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 890W Tc | 270A | 0.044Ohm | 3500 mJ | P-Channel | 12000pF @ 25V | 44m Ω @ 500mA, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPI70N10SL16AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi70n10sl16aksa1-datasheets-1419.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 70 ns | 95 ns | 250 ns | 70A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | 280A | 0.025Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 16m Ω @ 50A, 10V | 2V @ 2mA | 70A Tc | 240nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP2N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80-datasheets-9546.pdf | TO-220-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 54W | 1 | Not Qualified | 18ns | 15 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 54W Tc | TO-220AB | 2A | 8A | 200 mJ | 800V | N-Channel | 440pF @ 25V | 6.2 Ω @ 500mA, 10V | 5.5V @ 250μA | 2A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFA5N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfa5n50p3-datasheets-1424.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | FET General Purpose Power | 5A | Single | 500V | 114W Tc | 5A | N-Channel | 370pF @ 25V | 1.65 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA13N50C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa13n50cf109-datasheets-1377.pdf | TO-3P-3, SC-65-3 | 3 | 4 Weeks | 6.401g | ACTIVE (Last Updated: 1 week ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 13.5A | SILICON | SWITCHING | 500V | 500V | 218W Tc | 54A | 0.48Ohm | 860 mJ | N-Channel | 2055pF @ 25V | 480m Ω @ 6.75A, 10V | 4V @ 250μA | 13.5A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C604NLT1G-UIL3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN, 5 Leads | 18 Weeks | 60V | 3.9W Ta 200W Tc | N-Channel | 8900pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 40A Ta 287A Tc | 120nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7C06-40AITE,118 | Nexperia USA Inc. | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7c0640aite118-datasheets-1350.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 7 | EAR99 | Tin | No | e3 | YES | GULL WING | 7 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G6 | 35 ns | 115ns | 110 ns | 155 ns | 155A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 620A | 0.006Ohm | 40V | N-Channel | 4300pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 120nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTMTS0D7N04CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d7n04cltxg-datasheets-1388.pdf | 8-PowerTDFN | 33 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 4.9W Ta 205W Tc | N-Channel | 12238pF @ 25V | 630μ Ω @ 50A, 10V | 2.5V @ 250μA | 67A Ta 433A Tc | 205nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.2nF | 25ns | 12 ns | 10A | 20V | 550V | 45W Tc | N-Channel | 1200pF @ 25V | 720mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 24nC @ 10V | 720 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI65R190C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi65r190c6xksa1-datasheets-1391.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 151W Tc | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHB11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb11n80ege3-datasheets-1395.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440mOhm @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N08S207AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp100n08s207aksa1-datasheets-1396.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 300W | 1 | 26 ns | 51ns | 30 ns | 61 ns | 100A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | N-Channel | 4700pF @ 25V | 7.1m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTP32N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtp32n20t-datasheets-1409.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 18ns | 31 ns | 55 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 64A | 0.072Ohm | 250 mJ | 200V | N-Channel | 1760pF @ 25V | 72m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB65R190CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipw65r190cfdafksa1-datasheets-9913.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 18 Weeks | 3 | Halogen Free | D2PAK (TO-263AB) | 1.85nF | 17.5A | 650V | 650V | 151W Tc | N-Channel | 1850pF @ 100V | 190mOhm @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 190 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK72E12N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | Single | 255W | 33ns | 37 ns | 120 ns | 72A | 20V | 255W Tc | 120V | N-Channel | 8100pF @ 60V | 4.4m Ω @ 36A, 10V | 4V @ 1mA | 72A Ta | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1R4N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | TO-220AB | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| APT8014L2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8014l2fllg-datasheets-1348.pdf | 800V | 52A | TO-264-3, TO-264AA | Lead Free | 24 Weeks | 3 | No | 264 MAX™ [L2] | 7.24nF | 20 ns | 19ns | 15 ns | 69 ns | 52A | 30V | 800V | N-Channel | 7238pF @ 25V | 160mOhm @ 26A, 10V | 5V @ 5mA | 52A Tc | 285nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN95H2D2HCTI | Diodes Incorporated | $1.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn95h2d2hcti-datasheets-1354.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 950V | 950V | 40W Tc | TO-220AB | 6A | 24A | 360 mJ | N-Channel | 1487pF @ 25V | 2.2 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 20.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOB282L | Alpha & Omega Semiconductor Inc. | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 80V | 2.1W Ta 272.5W Tc | N-Channel | 7765pF @ 40V | 3.2m Ω @ 20A, 10V | 3.5V @ 250μA | 18.5A Ta 105A Tc | 178nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB240N04S41R0ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb240n04s41r0atma1-datasheets-1300.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | yes | EAR99 | ULTRA LOW RESISTANCE | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 240A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 231W Tc | 960A | 0.001Ohm | 750 mJ | N-Channel | 17682pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 180μA | 240A Tc | 221nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF1405ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirf1405zstrl-datasheets-1367.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 110ns | 82 ns | 48 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 600A | 0.0049Ohm | 270 mJ | 55V | N-Channel | 4780pF @ 25V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 150A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP65R190C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r190c6xksa1-datasheets-1305.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 13 ns | 12ns | 10 ns | 133 ns | 20.2A | 20V | 650V | SILICON | SWITCHING | 151W Tc | TO-220AB | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK8Q60W,S1VQ | Toshiba Semiconductor and Storage | $2.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 570pF | 16 Weeks | 500mOhm | 3 | Single | I-PAK | 570pF | 20ns | 5.5 ns | 70 ns | 8A | 30V | 600V | 80W Tc | 420mOhm | N-Channel | 570pF @ 300V | 500mOhm @ 4A, 10V | 3.7V @ 400μA | 8A Ta | 18.5nC @ 10V | Super Junction | 500 mΩ | 10V | ±30V |
