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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIPC30N60C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R165CPXKSA1 | Infineon Technologies | $6.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 3 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 21A | 61A | 0.165Ohm | 522 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL86062-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl86062f085-datasheets-2690.pdf | 8-PowerSFN | 6 Weeks | 850.0521mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100V | 429W Tc | N-Channel | 6970pF @ 50V | 2m Ω @ 80A, 10V | 4.5V @ 250μA | 300A Tc | 124nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60elge3-datasheets-2694.pdf | TO-247-3 | 3 | 18 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 21A | 45A | 0.197Ohm | 286 mJ | N-Channel | 1690pF @ 100V | 197m Ω @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP14N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | TO-220AB | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTA270N04T4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta270n04t47-datasheets-2635.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | yes | unknown | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.2m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCI25N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fci25n60nf102-datasheets-2697.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 2.084g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | No | Single | 216W | FET General Purpose Power | 21 ns | 22ns | 5 ns | 68 ns | 25A | 30V | 216W Tc | 600V | N-Channel | 3352pF @ 100V | 125m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 2.3nF | 50ns | 25 ns | 14A | 30V | 550V | 50W Tc | N-Channel | 2300pF @ 25V | 370mOhm @ 7A, 10V | 4V @ 1mA | 14A Ta | 40nC @ 10V | 370 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20V60W,LVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | 4-DFN-EP (8x8) | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 156W Tc | 170mOhm | 600V | N-Channel | 1680pF @ 300V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | Super Junction | 170 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta08n100d2hv-datasheets-2565.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 60W Tc | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 4V @ 25μA | 800mA Tj | 14.6nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0260N100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl0260n100-datasheets-2491.pdf | 8-PowerSFN | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 200A | 100V | 3.5W Ta 250W Tc | N-Channel | 9265pF @ 50V | 2.6m Ω @ 80A, 10V | 4V @ 250μA | 200A Tc | 116nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N08S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n08s403aksa1-datasheets-6454.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | GREEN | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | 260 | NOT SPECIFIED | 1 | 30 ns | 15ns | 50 ns | 60 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 278W Tc | 480A | 0.0028Ohm | 920 mJ | N-Channel | 11550pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 223μA | 120A Tc | 167nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFBC40ASTRRPBF | Vishay Siliconix | $2.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | 6.2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FDB016N04AL7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fdb016n04al7-datasheets-2557.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.2mm | 4.7mm | 9.4mm | 6 | 16 Weeks | 1.312g | 7 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 283W | 1 | FET General Purpose Power | R-PSSO-G6 | 21 ns | 14ns | 33 ns | 118 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 283W Tc | 40V | N-Channel | 11600pF @ 25V | 1.6m Ω @ 80A, 10V | 3V @ 250μA | 160A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| R6024ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-3P-3 Full Pack | 3 | 10 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 120W Tc | 72A | 0.165Ohm | 497 mJ | N-Channel | 1650pF @ 25V | 165m Ω @ 11.3A, 10V | 4V @ 1mA | 24A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7739L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf7739l2trpbf-datasheets-2547.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.112mm | Lead Free | 9 | 11 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 3.8W | 1 | FET General Purpose Power | R-XBCC-N9 | 21 ns | 71ns | 42 ns | 56 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 125W Tc | 375A | 270 mJ | 40V | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 375A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMFS4927NCT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4927nt1g-datasheets-2546.pdf | 8-PowerTDFN, 5 Leads | 5 | 16 Weeks | 5 | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | Single | 1 | FET General Purpose Power | 9.2 ns | 25.5ns | 4.4 ns | 14 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 920mW Ta 20.8W Tc | 7.9A | 0.012Ohm | N-Channel | 913pF @ 15V | 7.3m Ω @ 30A, 10V | 2.2V @ 250μA | 7.9A Ta 38A Tc | 8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS4310TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfs4310trl-datasheets-2610.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 110ns | 78 ns | 68 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 550A | 0.007Ohm | 980 mJ | 100V | N-Channel | 7670pF @ 50V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDP039N08B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp039n08bf102-datasheets-2618.pdf | TO-220-3 | Lead Free | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Single | 214W | 1 | FET General Purpose Power | 120A | 20V | 80V | 214W Tc | N-Channel | 9450pF @ 40V | 3.9m Ω @ 100A, 10V | 4.5V @ 250μA | 120A Tc | 133nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020ANZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-3P-3 Full Pack | Lead Free | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 120W Tc | 80A | 0.22Ohm | 26.7 mJ | N-Channel | 2040pF @ 25V | 220m Ω @ 10A, 10V | 4.15V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP220N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp220n04t2-datasheets-2629.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | 75A | e3 | Matte Tin (Sn) | 40V | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 21ns | 21 ns | 31 ns | 220A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 0.0035Ohm | 600 mJ | 40V | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA65R125C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r125c7xksa1-datasheets-2630.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 15ns | 8 ns | 71 ns | 10A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 75A | 0.125Ohm | 89 mJ | N-Channel | 1670pF @ 400V | 125m Ω @ 8.9A, 10V | 4V @ 440μA | 10A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTH36N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 36A | 200V | N-Channel | 36A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6015ANJTL | ROHM Semiconductor | $7.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 50 ns | 50ns | 60 ns | 150 ns | 15A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 100W Tc | 60A | N-Channel | 1700pF @ 25V | 300m Ω @ 7.5A, 10V | 4.5V @ 1mA | 15A Tc | 50nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI111N15N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipp111n15n3gxksa1-datasheets-4542.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | Contains Lead | 3 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 214W | 1 | Not Qualified | 17 ns | 35ns | 9 ns | 32 ns | 83A | 20V | 150V | SILICON | SWITCHING | 214W Tc | N-Channel | 3230pF @ 75V | 11.1m Ω @ 83A, 10V | 4V @ 160μA | 83A Tc | 55nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA15P15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | TO-263AA | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7769L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7769l2tr-datasheets-2501.pdf | DirectFET™ Isometric L8 | Lead Free | 9 | 16 Weeks | No SVHC | 15 | EAR99 | AEC-Q101 | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XBCC-N9 | 375A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.7V | 3.3W Ta 125W Tc | 20A | 500A | 0.0035Ohm | 260 mJ | N-Channel | 11560pF @ 25V | 3.5m Ω @ 74A, 10V | 4V @ 250μA | 375A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TK13A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.8nF | 40ns | 15 ns | 13A | 30V | 500V | 45W Tc | N-Channel | 1800pF @ 25V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 38nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH56N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 56A | 150V | N-Channel | 56A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1324STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1324strl7p-datasheets-9462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 190ns | 120 ns | 83 ns | 195A | 20V | SILICON | SWITCHING | 300W Tc | 1420A | 0.00165Ohm | 270 mJ | 24V | N-Channel | 7590pF @ 24V | 1.65m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V |
