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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMFS5C410NLTWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c410nltt3g-datasheets-9207.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 167W Tc | 330A | 900A | 0.0012Ohm | 706 mJ | N-Channel | 8862pF @ 25V | 0.9m Ω @ 50A, 10V | 2V @ 250μA | 50A Ta 330A Tc | 143nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM200N04-1M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm200n041m8ge3-datasheets-3289.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 375W Tc | 200A | 600A | 0.0018Ohm | 361 mJ | N-Channel | 17350pF @ 25V | 1.8m Ω @ 30A, 10V | 3.5V @ 250μA | 200A Tc | 310nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7530PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb7530pbf-datasheets-0453.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3.7V | 375W Tc | 760A | 0.002Ohm | 60V | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 11A | TO-220-3 | Lead Free | 170W | TO-220AB | 11A | 500V | 170W Tc | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS41N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb41n15dpbf-datasheets-1190.pdf | 150V | 41A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 45MOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.1W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 63ns | 14 ns | 25 ns | 41A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 3.1W Ta | 164A | 470 mJ | 150V | N-Channel | 2520pF @ 25V | 5.5 V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FCPF125N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-fcpf125n65s3-datasheets-3247.pdf | TO-220-3 Full Pack | 12 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 38W Tc | N-Channel | 1790pF @ 400V | 125m Ω @ 12A, 10V | 4.5V @ 2.4mA | 24A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S303AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s303atma1-datasheets-8734.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 188W Tc | 80A | 320A | 0.0035Ohm | 526 mJ | N-Channel | 7300pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 120μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C410NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-ntmfs5c410nt1g-datasheets-6675.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10V60W,LVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | 4-DFN-EP (8x8) | 700pF | 45 ns | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 600V | 88.3W Tc | 380mOhm | 600V | N-Channel | 700pF @ 300V | 380mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H600SH3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h600sh3-datasheets-3190.pdf | TO-251-3, IPak, Short Leads | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 700V | 113W Tc | N-Channel | 643pF @ 25V | 600m Ω @ 2.4A, 10V | 4V @ 250μA | 11A Tc | 18.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4951NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 2 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS33N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | 150V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 13 ns | 38ns | 21 ns | 23 ns | 33A | 30V | SILICON | DRAIN | SWITCHING | 3.8W Ta 170W Tc | 0.056Ohm | 150V | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK20A60W5,S5VX | Toshiba Semiconductor and Storage | $4.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.8nF | 90 ns | 45ns | 6 ns | 100 ns | 20A | 30V | 600V | 45W Tc | 150mOhm | 600V | N-Channel | 1800pF @ 300V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 55nC @ 10V | 175 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS6535 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfsl6535-datasheets-2914.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 3 | EAR99 | Tin | No | 210W | 1 | FET General Purpose Power | 15 ns | 16ns | 10 ns | 22 ns | 19A | 20V | Single | 210W Tc | 300V | N-Channel | 2340pF @ 25V | 185m Ω @ 11A, 10V | 5V @ 150μA | 19A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R185C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r185c7auma1-datasheets-3208.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | 1 | 13A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 77W Tc | 0.185Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 185m Ω @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N08S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp120n08s403aksa1-datasheets-6454.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30 ns | 15ns | 50 ns | 60 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 278W Tc | 480A | 0.0025Ohm | 920 mJ | N-Channel | 11550pF @ 25V | 2.5m Ω @ 100A, 10V | 4V @ 223μA | 120A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPLU250N04S41R7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-iplu250n04s41r7xtma1-datasheets-3219.pdf | 8-PowerSFN | Lead Free | 2 | 20 Weeks | 8 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | 250A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | 1000A | 0.0012Ohm | 170 mJ | N-Channel | 7900pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 80μA | 250A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R250CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r250cpxksa1-datasheets-3225.pdf | TO-220 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 40 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 114W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 114W | 1 | Not Qualified | 1.42nF | 35 ns | 14ns | 11 ns | 80 ns | 13A | 20V | 500V | ISOLATED | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 250mOhm | 500V | 250 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP150A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-irfp150a-datasheets-3228.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 7 Weeks | 6.401g | 40MOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 193W | 1 | 17 ns | 20ns | 45 ns | 80 ns | 43A | 20V | SILICON | SWITCHING | 193W Tc | 740 mJ | 100V | N-Channel | 2270pF @ 25V | 40m Ω @ 21.5A, 10V | 4V @ 250μA | 43A Tc | 97nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $8.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 800pF | 20ns | 12 ns | 7.5A | 30V | 550V | 40W Tc | N-Channel | 800pF @ 25V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 7.5A Ta | 16nC @ 10V | 1.07 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2903ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf2903zpbf-datasheets-3165.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 290W | 1 | FET General Purpose Power | 24 ns | 100ns | 37 ns | 48 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 290W Tc | TO-220AB | 51 ns | 260A | 0.0024Ohm | 820 mJ | 30V | N-Channel | 6320pF @ 25V | 4 V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOV20S60 | Alpha & Omega Semiconductor Inc. | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 4-PowerTSFN | 16 Weeks | FET General Purpose Power | 18A | Single | 600V | 8.3W Ta 278W Tc | N-Channel | 1038pF @ 100V | 250m Ω @ 10A, 10V | 4.1V @ 250μA | 3.6A Ta 18A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP032N08B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp032n08bf102-datasheets-3177.pdf | TO-220-3 | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | No | Single | FET General Purpose Power | 38 ns | 44ns | 31 ns | 71 ns | 120A | 20V | 80V | 263W Tc | N-Channel | 10965pF @ 40V | 3.3m Ω @ 100A, 10V | 4.5V @ 250μA | 120A Tc | 144nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2640LG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2640n3g-datasheets-0948.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.9mm | 8 | 6 Weeks | 84.99187mg | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 40 | 1.3W | 1 | Other Transistors | Not Qualified | 10 ns | 15ns | 15 ns | 60 ns | -210mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 740mW Ta | -400V | P-Channel | 300pF @ 25V | 15 Ω @ 300mA, 10V | 2V @ 1mA | 86mA Tj | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C612NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerTDFN, 5 Leads | 5 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 167W Tc | 900A | 0.0015Ohm | 451 mJ | N-Channel | 6660pF @ 25V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 235A Tc | 41nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A65W,S5X | Toshiba Semiconductor and Storage | $4.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 570pF | 7.8A | 650V | 30W Tc | N-Channel | 570pF @ 300V | 650mOhm @ 3.9A, 10V | 3.5V @ 300μA | 7.8A Ta | 16nC @ 10V | 650 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P06-15L-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sud50p0615le3-datasheets-1667.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | 15 ns | 70ns | 175 ns | 175 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3W Ta 136W Tc | 80A | 0.015Ohm | P-Channel | 4950pF @ 25V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDPF17N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf17n60nt-datasheets-3119.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 62.5W | 1 | FET General Purpose Power | 48 ns | 79ns | 62 ns | 128 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 62.5W Tc | TO-220AB | 68A | 600V | N-Channel | 3040pF @ 25V | 340m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| DMG9N65CT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmg9n65ct-datasheets-3123.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | No SVHC | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | 1 | 40 | 1 | 39 ns | 29ns | 28 ns | 122 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 165W Tc | TO-220AB | 9A | 650V | N-Channel | 2310pF @ 25V | 1.3 Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R195C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipl65r195c7auma1-datasheets-3125.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 12A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tc | 0.195Ohm | 57 mJ | N-Channel | 1150pF @ 400V | 195m Ω @ 2.9A, 10V | 4V @ 290μA | 12A Tc | 23nC @ 10V | 10V | ±20V |
