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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR5410TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5410tr-datasheets-4735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRLR3714TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trl-datasheets-4784.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20m Ω @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQC40016E_DFFR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-220-3 | TO-220AB | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3714TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20m Ω @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3714STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20m Ω @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3714TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trl-datasheets-4784.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf2804s-datasheets-2439.pdf | TO-220-3 | 10.66mm | 12.88mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 13 ns | 120ns | 130 ns | 130 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | TO-220AB | 270A | 540 mJ | 40V | N-Channel | 6450pF @ 25V | 2.3m Ω @ 75A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFZ44RSTRR | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44rpbf-datasheets-9586.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 1.9nF | 50A | 60V | 150W Tc | N-Channel | 1900pF @ 25V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4933NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4933nt3g-datasheets-3867.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 2.74W | 1 | FET General Purpose Power | 31 ns | 33ns | 23 ns | 47 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 1.06W Ta 104W Tc | 20A | 0.002Ohm | 30V | N-Channel | 10930pF @ 15V | 1.2m Ω @ 30A, 10V | 2.2V @ 250μA | 20A Ta 210A Tc | 62.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRL3715TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-220-3 | TO-220AB | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44VSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60V | 115W Tc | N-Channel | 1812pF @ 25V | 16.5m Ω @ 31A, 10V | 4V @ 250μA | 55A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711tr-datasheets-4743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.5W Ta 120W Tc | TO-252AA | 30A | 440A | 0.0065Ohm | 460 mJ | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI4408DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4408dyt1e3-datasheets-7898.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 4.5MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 42 ns | 42ns | 26 ns | 60 ns | 21A | 20V | SILICON | SWITCHING | 1V | 1.6W Ta | 20V | N-Channel | 4.5m Ω @ 21A, 10V | 1V @ 250μA (Min) | 14A Ta | 32nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| IRFR3707TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 87W Tc | N-Channel | 1990pF @ 15V | 13mOhm @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7534TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7534trl7pp-datasheets-4217.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Lead Free | 6 | 12 Weeks | 1.59999g | No SVHC | 7 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G6 | 140 ns | 120ns | 86 ns | 195 ns | 240A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 290W Tc | TO-263CB | N-Channel | 9990pF @ 25V | 1.95m Ω @ 100A, 10V | 3.7V @ 250μA | 240A Tc | 300nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||
| IRL3715STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9N20DTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 86W Tc | TO-252AA | 9.4A | 38A | 0.38Ohm | 100 mJ | N-Channel | 560pF @ 25V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFZ46L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz46l-datasheets-4782.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 1.8nF | 50A | 50V | 3.7W Ta 150W Tc | N-Channel | 1800pF @ 25V | 24mOhm @ 32A, 10V | 4V @ 250μA | 50A Tc | 66nC @ 10V | 24 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3704TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3704tr-datasheets-4692.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 90W Tc | N-Channel | 1996pF @ 10V | 9.5m Ω @ 15A, 10V | 3V @ 250μA | 75A Tc | 19nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 25ns | 12 ns | 12A | 30V | 450V | 45W Tc | N-Channel | 1200pF @ 25V | 520m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 50W Tc | N-Channel | 333pF @ 25V | 25 Ω @ 400mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS17N20DTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2907ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf2907zpbf-datasheets-0354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 140ns | 100 ns | 97 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 680A | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IRFR5410TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5410tr-datasheets-4735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPI65R190CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 151W | 1 | Not Qualified | R-PSIP-T3 | 12 ns | 8.4ns | 6.4 ns | 53.2 ns | 17.5A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 151W Tc | 57.2A | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFR3711TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711tr-datasheets-4743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.5W Ta 120W Tc | TO-252AA | 30A | 440A | 0.0065Ohm | 460 mJ | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFS17N20DTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3707TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 87W Tc | N-Channel | 1990pF @ 15V | 13m Ω @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V |
