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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPW60R299CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r299cpfksa1-datasheets-1429.pdf | TO-247-3 | 3 | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 96W Tc | 11A | 34A | 0.299Ohm | 290 mJ | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| SPB10N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb10n10l-datasheets-1435.pdf | 100V | 10.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e0 | TIN LEAD | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4.6 ns | 19.1ns | 17.8 ns | 27.8 ns | 10.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50W Tc | 42.2A | 0.21Ohm | 60 mJ | N-Channel | 444pF @ 25V | 154m Ω @ 8.1A, 10V | 2V @ 21μA | 10.3A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| SPB21N10 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp21n10-datasheets-5988.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | YES | FET General Purpose Power | Single | 100V | 90W Tc | 21A | N-Channel | 865pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 44μA | 21A Tc | 38.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPB18P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb18p06p-datasheets-1373.pdf | -60V | -18.6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 18.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 81.1W Ta | 74.8A | 0.13Ohm | 151 mJ | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.7A Ta | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| SPB47N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb47n10l-datasheets-1377.pdf | 100V | 47A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 175W Tc | 188A | 0.04Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 26m Ω @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPB35N10 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb35n10-datasheets-5936.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 100V | 150W Tc | N-Channel | 1570pF @ 25V | 44m Ω @ 26.4A, 10V | 4V @ 83μA | 35A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPB160N04S203CTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb160n04s203ctma1-datasheets-1385.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 160A | 640A | 0.0029Ohm | 810 mJ | N-Channel | 7320pF @ 25V | 2.9m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPB10N10 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb10n10g-datasheets-1389.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 100V | 50W Tc | N-Channel | 426pF @ 25V | 170mOhm @ 7.8A, 10V | 4V @ 21μA | 10.3A Tc | 19.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPB100N04S2L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n04s2l03-datasheets-1393.pdf | 40V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 400A | 0.0041Ohm | 810 mJ | N-Channel | 8000pF @ 25V | 3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPB100N06S2-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n06s205-datasheets-1397.pdf | 55V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | FET General Purpose Power | 100A | Single | 300W Tc | N-Channel | 6800pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPB100N06S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n06s2l05-datasheets-1401.pdf | 55V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 400A | 0.0056Ohm | 810 mJ | N-Channel | 7530pF @ 25V | 4.4m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| IPU06N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu06n03lbg-datasheets-1405.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 94W Tc | 50A | 200A | 0.0063Ohm | 160 mJ | N-Channel | 2800pF @ 15V | 6.3m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPB160N04S2L03DTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb160n04s2l03dtma1-datasheets-1409.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 160A | 640A | 0.0037Ohm | 810 mJ | N-Channel | 8000pF @ 25V | 2.7m Ω @ 80A, 10V | 2V @ 250μA | 160A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPS03N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd03n03lag-datasheets-3428.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 115W Tc | 90A | 360A | 0.0053Ohm | 300 mJ | N-Channel | 5200pF @ 15V | 3.4m Ω @ 60A, 10V | 2V @ 70μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPB100N08S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n08s2l07-datasheets-1421.pdf | 75V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 400A | 0.0084Ohm | 810 mJ | N-Channel | 7130pF @ 25V | 6.5m Ω @ 68A, 10V | 2V @ 250μA | 100A Tc | 246nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SPB100N03S2-03 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n03s203g-datasheets-1362.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | unknown | YES | SINGLE | GULL WING | 4 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 300W Tc | 100A | 400A | 0.003Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPUH6N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipuh6n03lbg-datasheets-1365.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30V | 83W Tc | N-Channel | 2800pF @ 15V | 6.3m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPB100N08S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n08s207-datasheets-1369.pdf | 75V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0068Ohm | 810 mJ | N-Channel | 6020pF @ 25V | 6.8m Ω @ 66A, 10V | 4V @ 250μA | 100A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IPS06N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu06n03lagxk-datasheets-6263.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 83W Tc | TO-251AA | 50A | 350A | 0.0096Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.9m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| IPSH5N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh5n03lag-datasheets-0847.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 83W Tc | 50A | 350A | 0.0054Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.4m Ω @ 50A, 10V | 2V @ 35μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IPSH6N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh6n03lag-datasheets-7964.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 71W Tc | TO-251AA | 50A | 350A | 0.0062Ohm | 150 mJ | N-Channel | 2390pF @ 15V | 6.2m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 19nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| IPS13N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf13n03lag-datasheets-2614.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 46W Tc | 30A | 210A | 0.0128Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 12.8m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IPP100N06S3-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s304-datasheets-1023.pdf | 55V | 100A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 214W | 1 | FET General Purpose Power | Not Qualified | 62ns | 62 ns | 62 ns | 100A | 20V | SILICON | 214W Tc | TO-220AB | 400A | 0.0044Ohm | 450 mJ | 55V | N-Channel | 14230pF @ 25V | 4.4m Ω @ 80A, 10V | 4V @ 150μA | 100A Tc | 314nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IPP13N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp13n03lbg-datasheets-1322.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 52W Tc | TO-220AB | 30A | 120A | 0.0128Ohm | 64 mJ | N-Channel | 1355pF @ 15V | 12.8m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 10nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| IPS09N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu09n03lag-datasheets-5465.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 63W Tc | 50A | 350A | 0.015Ohm | 75 mJ | N-Channel | 1642pF @ 15V | 8.8m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPB100N04S2-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n04s204-datasheets-1331.pdf | 40V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0033Ohm | 810 mJ | N-Channel | 7220pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IPU09N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips09n03lbg-datasheets-1250.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 58W Tc | 50A | 200A | 0.0144Ohm | 57 mJ | N-Channel | 1600pF @ 15V | 9.3m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IPUH6N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh6n03lag-datasheets-7964.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 71W Tc | 50A | 350A | 0.0062Ohm | 150 mJ | N-Channel | 2390pF @ 15V | 6.2m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IPU04N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 115W Tc | 50A | 350A | 0.0059Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 4m Ω @ 50A, 10V | 2V @ 80μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IPU10N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf10n03lag-datasheets-0865.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 52W Tc | 30A | 210A | 0.0104Ohm | 80 mJ | N-Channel | 1358pF @ 15V | 10.4m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V |
