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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPP100N04S2-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n04s204-datasheets-1331.pdf | 40V | 100A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | 400A | 0.0036Ohm | 810 mJ | N-Channel | 7220pF @ 25V | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPP100N08S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n08s2l07-datasheets-1421.pdf | 75V | 100A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0087Ohm | 810 mJ | N-Channel | 7130pF @ 25V | 6.8m Ω @ 68A, 10V | 2V @ 250μA | 100A Tc | 246nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPP70N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb70n10l-datasheets-1535.pdf | 100V | 70A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | 260 | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 250ns | 95 ns | 250 ns | 70A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | TO-220AB | 280A | 0.025Ohm | 700 mJ | 100V | N-Channel | 4540pF @ 25V | 16m Ω @ 50A, 10V | 2V @ 2mA | 70A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SPP11N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa11n65c3xksa1-datasheets-1256.pdf | 650V | 11A | TO-220-3 | Lead Free | 17 Weeks | 3 | Halogen Free | Single | 125W | PG-TO220-3-1 | 1.2nF | 10 ns | 5ns | 5 ns | 44 ns | 11A | 20V | 650V | 650V | 125W Tc | 380mOhm | 650V | N-Channel | 1200pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 380 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPI80N04S2-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s204-datasheets-1491.pdf | 40V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | 320A | 0.0037Ohm | 810 mJ | N-Channel | 6980pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPI73N03S2L-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp73n03s2l08xk-datasheets-5648.pdf | 30V | 73A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 73A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 107W Tc | 62A | 320A | 0.0134Ohm | 170 mJ | N-Channel | 1710pF @ 25V | 8.4m Ω @ 36A, 10V | 2V @ 55μA | 73A Tc | 46.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPI20N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp20n60c3hksa1-datasheets-5405.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 8 Weeks | PG-TO262-3-1 | 650V | 208W Tc | N-Channel | 2400pF @ 25V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPN01N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spn01n60c3-datasheets-1772.pdf | 650V | 300mA | TO-261-4, TO-261AA | Lead Free | 4 | 3 | EAR99 | unknown | 8541.29.00.95 | e3 | MATTE TIN | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 30ns | 30 ns | 60 ns | 300mA | 20V | SILICON | 1.8W Ta | 1.6A | 6Ohm | 650V | N-Channel | 100pF @ 25V | 3 V | 6 Ω @ 500mA, 10V | 3.7V @ 250μA | 300mA Ta | 5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| SPP100N06S2-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n06s205-datasheets-1397.pdf | 55V | 100A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.005Ohm | 810 mJ | N-Channel | 6800pF @ 25V | 5m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPD30N06S2L-23 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n06s2l23-datasheets-1780.pdf | 55V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100W Tc | 0.03Ohm | N-Channel | 1390pF @ 25V | 23m Ω @ 22A, 10V | 2V @ 50μA | 30A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPB08P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb08p06p-datasheets-1784.pdf | -60V | -8.8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 8.8A | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 42W Tc | 35.32A | 0.3Ohm | 70 mJ | P-Channel | 420pF @ 25V | 300m Ω @ 6.2A, 10V | 4V @ 250μA | 8.8A Ta | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPP100N06S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb100n06s2l05-datasheets-1401.pdf | 55V | 100A | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0059Ohm | 810 mJ | N-Channel | 7530pF @ 25V | 4.7m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPN04N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spn04n60s5-datasheets-1792.pdf | 650V | 700mA | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | EAR99 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | 20ns | 20 ns | 130 ns | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W Ta | 0.8A | 3A | 0.95Ohm | 600V | N-Channel | 600pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 800mA Ta | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SPI11N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa11n65c3xksa1-datasheets-1256.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | 8 Weeks | 3 | Single | PG-TO262-3-1 | 1.2nF | 10 ns | 5ns | 44 ns | 11A | 20V | 650V | 125W Tc | 380mOhm | 650V | N-Channel | 1200pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 380 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPI100N08S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2008 | 75V | 100A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | PG-TO262-3-1 | 100A | 75V | N-Channel | 100A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI80N03S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l05aksa1-datasheets-7865.pdf | 30V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 167W Tc | 320A | 0.0075Ohm | 325 mJ | N-Channel | 3320pF @ 25V | 5.2m Ω @ 55A, 10V | 2V @ 110μA | 80A Tc | 89.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPI15N60C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spa15n60c3xksa1-datasheets-1597.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | no | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 10 ns | 5ns | 50 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 156W Tc | 45A | 0.28Ohm | 460 mJ | N-Channel | 1660pF @ 25V | 280m Ω @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPI47N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb47n10l-datasheets-1377.pdf | 100V | 47A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 175W Tc | 188A | 0.04Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 26m Ω @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPI11N60S5BKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp11n60s5xksa1-datasheets-1470.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 600V | 125W Tc | N-Channel | 1460pF @ 25V | 380mOhm @ 7A, 10V | 5.5V @ 500μA | 11A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI80N06S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spb80n06s2l05-datasheets-1499.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 320A | 0.006Ohm | 800 mJ | N-Channel | 7530pF @ 25V | 4.8m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPI80N06S2-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spb80n06s208-datasheets-1543.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 215W Tc | 320A | 0.008Ohm | 450 mJ | N-Channel | 3800pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPI16N50C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa16n50c3xksa1-datasheets-4149.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | Not Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 10 ns | 8ns | 50 ns | 16A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 160W Tc | 48A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 10A, 10V | 3.9V @ 675μA | 16A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPD22N08S2L-50 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd22n08s2l50-datasheets-1704.pdf | 75V | 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tc | 18A | 100A | 0.065Ohm | 94 mJ | N-Channel | 850pF @ 25V | 50m Ω @ 11A, 10V | 2V @ 31μA | 25A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPI70N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb70n10l-datasheets-1535.pdf | 100V | 70A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | 280A | 0.025Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 16m Ω @ 50A, 10V | 2V @ 2mA | 70A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPN02N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spn02n60s5-datasheets-1712.pdf | 600V | 400mA | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | HIGH VOLTAGE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 15ns | 15 ns | 110 ns | 400mA | 3.5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta | 0.4A | 2.2A | 3Ohm | 50 mJ | 600V | N-Channel | 250pF @ 25V | 3 Ω @ 1.1A, 10V | 5.5V @ 80μA | 400mA Ta | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| SPI12N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa12n50c3xksa1-datasheets-5545.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 8 Weeks | PG-TO262-3-1 | 560V | 125W Tc | N-Channel | 1200pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI80N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s203gatma1-datasheets-1455.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED | compliant | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 300W Tc | 80A | 320A | 0.0034Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPI42N03S2L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb42n03s2l13-datasheets-2784.pdf | 30V | 42A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 42A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83W Tc | 248A | 0.0199Ohm | 110 mJ | N-Channel | 1130pF @ 25V | 12.9m Ω @ 21A, 10V | 2V @ 37μA | 42A Tc | 30.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPI80N06S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s207-datasheets-1523.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | 320A | 0.0066Ohm | 530 mJ | N-Channel | 4540pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPI35N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp35n10-datasheets-5391.pdf | 100V | 35A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 63ns | 23 ns | 39 ns | 35A | 20V | SILICON | 150W Tc | 140A | 0.044Ohm | 245 mJ | 100V | N-Channel | 1570pF @ 25V | 44m Ω @ 26.4A, 10V | 4V @ 83μA | 35A Tc | 65nC @ 10V | 10V | ±20V |
