Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVMJS0D9N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmjs0d9n04cltwg-datasheets-4647.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 167W Tc | N-Channel | 8862pF @ 25V | 0.82m Ω @ 50A, 10V | 2V @ 190μA | 50A Ta 330A Tc | 143nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB380CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb380cfc0g-datasheets-4649.pdf | TO-220-3 Full Pack | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 62.5W Tc | N-Channel | 810pF @ 100V | 380m Ω @ 2.7A, 10V | 4V @ 250μA | 11A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB286L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aob286l-datasheets-8392.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 70A | Single | 80V | 2.1W Ta 167W Tc | N-Channel | 3142pF @ 40V | 5.7m Ω @ 20A, 10V | 3.3V @ 250μA | 13A Ta 70A Tc | 63nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H858NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h858nwft1g-datasheets-7859.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.5W Ta 42W Tc | N-Channel | 510pF @ 40V | 20.7m Ω @ 5A, 10V | 4V @ 30μA | 8.4A Ta 29A Tc | 8.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOV11S60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 4-PowerTSFN | 4-DFN-EP (8x8) | 545pF | 8A | 600V | 8.3W Ta 156W Tc | N-Channel | 545pF @ 100V | 500mOhm @ 3.8A, 10V | 4.1V @ 250μA | 650mA Ta 8A Tc | 11nC @ 10V | 500 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT284L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot284l-datasheets-8394.pdf | TO-220-3 | 18 Weeks | 105A | 80V | 2.1W Ta 250W Tc | N-Channel | 5154pF @ 40V | 4.5m Ω @ 20A, 10V | 3.3V @ 250μA | 16A Ta 105A Tc | 100nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | TO-220SIS | 490pF | 18ns | 8 ns | 5.5A | 30V | 450V | N-Channel | 490pF @ 25V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 5.5A Ta | 11nC @ 10V | 1.35 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM4N80CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4n80cic0g-datasheets-4689.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 800V | 38.7W Tc | N-Channel | 955pF @ 25V | 3 Ω @ 1.2A, 10V | 4V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 35W | TO-220SIS | 490pF | 18ns | 8 ns | 5A | 30V | 500V | 35W Tc | 1.5Ohm | 500V | N-Channel | 490pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPA90R1K2C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa90r1k2c3xksa2-datasheets-4550.pdf | TO-220-3 Full Pack | 18 Weeks | 900V | 31W Tc | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmth6005lct-datasheets-4609.pdf | TO-220-3 | 3 | 20 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2.8W Ta 125W Tc | TO-220AB | 160A | 0.006Ohm | 98 mJ | N-Channel | 2962pF @ 30V | 6m Ω @ 20A, 10V | 3V @ 250μA | 100A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIR826DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 104W Tc | N-Channel | 2900pF @ 40V | 4.8mOhm @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R0-40ULDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn1r040uldx-datasheets-4611.pdf | SOT-1023, 4-LFPAK | 12 Weeks | 40V | 164W | N-Channel | 280A | 127nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ30AH3045AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-buz30ah3045aatma1-datasheets-4553.pdf&product=infineontechnologies-buz30ah3045aatma1-6860300 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 26 Weeks | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSSO-G2 | 30 ns | 70ns | 90 ns | 250 ns | 21A | 20V | 200V | SILICON | SINGLE | DRAIN | 125W Tc | 84A | 450 mJ | N-Channel | 1900pF @ 25V | 130m Ω @ 13.5A, 10V | 4V @ 1mA | 21A Tc | 10V | ±20V | |||||||||||||||||||||||||||
| BUK9Y1R3-40HX | Nexperia USA Inc. | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R360CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r360cfd7xksa1-datasheets-4558.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 23W Tc | N-Channel | 679pF @ 400V | 360m Ω @ 2.9A, 10V | 4.5V @ 140μA | 5A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF22N50L | Alpha & Omega Semiconductor Inc. | $1.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 22A | Single | 500V | 39W Tc | N-Channel | 3710pF @ 25V | 260m Ω @ 11A, 10V | 4.5V @ 250μA | 22A Tc | 83nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF2142L | Alpha & Omega Semiconductor Inc. | $8.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 40V | 41W Tc | N-Channel | 8320pF @ 20V | 1.9m Ω @ 20A, 10V | 2.3V @ 250μA | 112A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB411L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob411l-datasheets-8379.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | Other Transistors | 78A | Single | 60V | 2.1W Ta 187W Tc | P-Channel | 6400pF @ 30V | 16.5m Ω @ 20A, 10V | 2.5V @ 250μA | 8A Ta 78A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMNR51-25YLHX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmnr5125ylhx-datasheets-4577.pdf | SOT-1023, 4-LFPAK | 12 Weeks | 4 | 25V | 333W Ta | N-Channel | 6990pF @ 12V | 610m Ω @ 25A, 10V | 2.2V @ 2mA | 380A Ta | 113nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86340ET80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc86340et80-datasheets-4578.pdf | 8-PowerWDFN | Lead Free | 10 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | 1 | Single | NOT SPECIFIED | 20 ns | 7.9ns | 5.1 ns | 23 ns | 68A | 20V | 2.8W Ta 65W Tc | 80V | N-Channel | 2775pF @ 40V | 6.5m Ω @ 14A, 10V | 4V @ 250μA | 14A Ta 68A Tc | 49nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOWF11S65 | Alpha & Omega Semiconductor Inc. | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 11A | 650V | 28W Tc | N-Channel | 646pF @ 100V | 399m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 13.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFZ48S-GE3 | Vishay Siliconix | $1.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK (TO-263) | 60V | 3.7W Ta 190W Tc | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB008NE2LXXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-bsb008ne2lxxuma1-datasheets-4591.pdf | 3-WDSON | 3 | 26 Weeks | 3 | yes | EAR99 | ULTRA LOW RESISTANCE | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | Halogen Free | BOTTOM | NO LEAD | 3 | 1 | Not Qualified | 12.6 ns | 47.2ns | 32.4 ns | 75 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 89W Tc | 180A | 400A | 0.0008Ohm | 600 mJ | N-Channel | 16000pF @ 12V | 0.8m Ω @ 30A, 10V | 2V @ 250μA | 46A Ta 180A Tc | 343nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| AOT11S65L | Alpha & Omega Semiconductor Inc. | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot11s65l-datasheets-8388.pdf | TO-220-3 | 18 Weeks | 3 | 11A | 650V | 198W Tc | N-Channel | 646pF @ 100V | 399m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 13.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6260 | Alpha & Omega Semiconductor Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8 | 104W | 1 | FET General Purpose Power | 85A | 20V | Single | 60V | 7.3W Ta 104W Tc | N-Channel | 5578pF @ 30V | 2.4m Ω @ 20A, 10V | 2.5V @ 250μA | 41A Ta 85A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AON6276 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 80V | 215W Tc | N-Channel | 4940pF @ 40V | 2.6m Ω @ 20A, 10V | 3.2V @ 250μA | 100A Tc | 100nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 60W Tc | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 4V @ 25μA | 800mA Tj | 14.6nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG7N65SCT | Diodes Incorporated | $1.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg7n65sct-datasheets-4607.pdf | TO-220-3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 125W Tc | N-Channel | 886pF @ 50V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 7.7A Tc | 25.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP053N08B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp053n08bf102-datasheets-4458.pdf | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 146W | 1 | FET General Purpose Power | R-PSFM-T3 | 75A | 20V | SILICON | SWITCHING | 80V | 80V | 146W Tc | TO-220AB | 480A | 0.0053Ohm | 365 mJ | N-Channel | 5960pF @ 40V | 5.3m Ω @ 75A, 10V | 4.5V @ 250μA | 75A Tc | 85nC @ 10V | 10V | ±20V |
