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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF2807ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | 170W | 1 | D2PAK | 3.27nF | 18 ns | 120ns | 130 ns | 40 ns | 75A | 20V | 75V | 170W Tc | 2mOhm | 40V | N-Channel | 3270pF @ 25V | 9.4mOhm @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 9.4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPCA8102(TE12L,Q,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8102te12lqm-datasheets-1033.pdf | 8-PowerVDFN | 30V | 1.6W Ta 45W Tc | P-Channel | 4600pF @ 10V | 6m Ω @ 20A, 10V | 2V @ 1mA | 40A Ta | 109nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS31N20DTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb31n20dpbf-datasheets-2062.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | 8541.21.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.1W Ta 200W Tc | 31A | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 107nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF1407STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1407strlpbf-datasheets-2142.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | Lead Free | 2 | 3 | EAR99 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 150ns | 140 ns | 150 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 75A | 520A | 0.0078Ohm | 75V | N-Channel | 5600pF @ 25V | 7.8m Ω @ 78A, 10V | 4V @ 250μA | 100A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| 2SK2376(Q) | Toshiba Semiconductor and Storage | $12.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2376q-datasheets-1054.pdf | TO-220-3, Short Tab | Lead Free | 3 | No | Single | 100W | 1 | 45A | 20V | 100W Tc | 60V | N-Channel | 3350pF @ 10V | 17m Ω @ 25A, 10V | 2V @ 1mA | 45A Ta | 110nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV110N25TS | IXYS | $52.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtv110n25ts-datasheets-0994.pdf | PLUS-220SMD | Lead Free | 2 | 3 | yes | EAR99 | AVALANCHE RATED | THROUGH-HOLE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T2 | 27ns | 27 ns | 60 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 694W Tc | 0.024Ohm | 1000 mJ | 250V | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 1mA | 110A Tc | 157nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPCA8031-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 30W | 3.4ns | 9.9 ns | 24A | 20V | 1.6W Ta 30W Tc | 30V | N-Channel | 2150pF @ 10V | 11m Ω @ 12A, 10V | 2.5V @ 1mA | 24A Ta | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV15N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100p-datasheets-4049.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 44ns | 58 ns | 44 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 543W Tc | 40A | 0.76Ohm | 500 mJ | 1kV | N-Channel | 5140pF @ 25V | 760m Ω @ 500mA, 10V | 6.5V @ 1mA | 15A Tc | 97nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TPC8022-H(TE12LQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8022hte12lqm-datasheets-1000.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 1.9W | 8-SOP (5.5x6.0) | 650pF | 3ns | 2 ns | 7.5A | 20V | 40V | 1W Ta | 27mOhm | 40V | N-Channel | 650pF @ 10V | 27mOhm @ 3.8A, 10V | 2.3V @ 1mA | 7.5A Ta | 11nC @ 10V | 27 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8102(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcf8102te85lfm-datasheets-1002.pdf | 8-SMD, Flat Lead | 20V | 700mW Ta | P-Channel | 1550pF @ 10V | 30m Ω @ 3A, 4.5V | 1.2V @ 200μA | 6A Ta | 19nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8011-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8011hte12lqm-datasheets-0959.pdf | 8-PowerVDFN | 8 | No | 45W | 1 | 13ns | 22 ns | 40A | 12V | 1.6W Ta 45W Tc | 20V | N-Channel | 2900pF @ 10V | 3.5m Ω @ 20A, 4.5V | 1.3V @ 200μA | 40A Ta | 32nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV102N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv102n20t-datasheets-0961.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TPC8018-H(TE12LQM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8018hte12lqm-datasheets-0963.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 1.9W | 8-SOP (5.5x6.0) | 2.265nF | 5ns | 11 ns | 18A | 20V | 30V | 1W Ta | 4.6mOhm | 30V | N-Channel | 2265pF @ 10V | 4.6mOhm @ 9A, 10V | 2.3V @ 1mA | 18A Ta | 38nC @ 10V | 4.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8021-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8021hte12lqm-datasheets-0965.pdf | 8-PowerVDFN | 8 | 2.8W | 5ns | 10 ns | 27A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 1395pF @ 10V | 9m Ω @ 14A, 10V | 2.3V @ 1mA | 27A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3315STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | 94W | 1 | D2PAK | 1.3nF | 9.6 ns | 32ns | 38 ns | 49 ns | 21A | 20V | 150V | 3.8W Ta 94W Tc | 82mOhm | 150V | N-Channel | 1300pF @ 25V | 82mOhm @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 82 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS17N20DTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7748DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7748dpt1ge3-datasheets-0280.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 13 Weeks | 506.605978mg | 4.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 4.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 36 ns | 16ns | 16 ns | 44 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 4.8W Ta 56W Tc | 23.5A | 45 mJ | 30V | N-Channel | 3770pF @ 15V | 4.8m Ω @ 15A, 10V | 2.7V @ 1mA | 50A Tc | 92nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRFS4610TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4610trlpbf-datasheets-5741.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | Single | 190W | 1 | D2PAK | 3.55nF | 18 ns | 87ns | 70 ns | 53 ns | 73A | 20V | 100V | 190W Tc | 14mOhm | 100V | N-Channel | 3550pF @ 50V | 14mOhm @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 14 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFV15N100PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100p-datasheets-4049.pdf | PLUS-220SMD | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 44ns | 58 ns | 44 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 543W Tc | 40A | 0.76Ohm | 500 mJ | 1kV | N-Channel | 5140pF @ 25V | 760m Ω @ 500mA, 10V | 6.5V @ 1mA | 15A Tc | 97nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TPCP8001-H(TE85LFM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcp8001hte85lfm-datasheets-0989.pdf | 8-SMD, Flat Lead | 8 | 7.2A | 30V | 1W Ta 30W Tc | N-Channel | 640pF @ 10V | 16m Ω @ 3.6A, 10V | 2.3V @ 1mA | 7.2A Ta | 11nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8010STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8010strlpbf-datasheets-5037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 260W Tc | N-Channel | 3830pF @ 25V | 15mOhm @ 45A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8033-H(TE12LQM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 3.713nF | 17A | 30V | N-Channel | 3713pF @ 10V | 5.3mOhm @ 8.5A, 10V | 2.5V @ 1mA | 17A Ta | 42nC @ 10V | 5.3 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK60D08J1(Q) | Toshiba Semiconductor and Storage | $4.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk60d08j1q-datasheets-0947.pdf | TO-220-3 | No SVHC | 67 | Single | 140W | 1 | TO-220(W) | 5.45nF | 5ns | 15 ns | 60A | 20V | 75V | 1.1V | 140W Tc | 78mOhm | 75V | N-Channel | 5450pF @ 10V | 7.8mOhm @ 30A, 10V | 2.3V @ 1mA | 60A Ta | 86nC @ 10V | 7.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPC6006-H(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 700μm | 1.6mm | No SVHC | 6 | unknown | 2.2W | 1 | 4ns | 3 ns | 3.9A | 20V | 40V | 2.3V | 700mW Ta | 40V | N-Channel | 251pF @ 10V | 2.3 V | 75m Ω @ 1.9A, 10V | 2.3V @ 1mA | 3.9A Ta | 4.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPC6104(TE85L,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 40mOhm | 2.2W | 5.5A | 8V | 20V | 700mW Ta | -20V | P-Channel | 1430pF @ 10V | 40m Ω @ 2.8A, 4.5V | 1.2V @ 200μA | 5.5A Ta | 19nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4890BDY-T1-GE3 | Vishay Siliconix | $2.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4890bdyt1ge3-datasheets-0957.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 186.993455mg | 12MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 20 ns | 10ns | 8 ns | 20 ns | 10.7A | 25V | SILICON | SWITCHING | 30V | 30V | 2.5W Ta 5.7W Tc | 60A | 20 mJ | N-Channel | 1535pF @ 15V | 12m Ω @ 10A, 10V | 2.6V @ 250μA | 16A Tc | 33nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
| SI5475DDC-T1-GE3 | Vishay Siliconix | $5.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5475ddct1ge3-datasheets-0454.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | Unknown | 32mOhm | 8 | Tin | No | 6A | 12V | 1 | Single | 5.7W | 1 | 1206-8 ChipFET™ | 1.6nF | 20 ns | 40ns | 40 ns | 45 ns | -6A | 8V | 12V | -400mV | 2.3W Ta 5.7W Tc | 32mOhm | -12V | P-Channel | 1600pF @ 6V | 32mOhm @ 5.4A, 4.5V | 1V @ 250μA | 6A Tc | 50nC @ 8V | 32 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IRF6713STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6713str1pbf-datasheets-0675.pdf | DirectFET™ Isometric SQ | 3.95mm | 508μm | 3.95mm | Lead Free | No SVHC | 3MOhm | 6 | No | 2.2W | 1 | DIRECTFET™ SQ | 2.88nF | 12 ns | 13ns | 6 ns | 9.2 ns | 22A | 20V | 25V | 25V | 1.9V | 2.2W Ta 42W Tc | 30 ns | 4.6mOhm | 25V | N-Channel | 2880pF @ 13V | 1.9 V | 3mOhm @ 22A, 10V | 2.4V @ 50μA | 22A Ta 95A Tc | 32nC @ 4.5V | 3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TPC8110(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 40V | 1W Ta | P-Channel | 2180pF @ 10V | 25mOhm @ 4A, 10V | 2V @ 1mA | 8A Ta | 48nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8005-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8005hte12lqm-datasheets-0924.pdf | 8-PowerVDFN | 8 | 45W | 3ns | 8 ns | 27A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 1395pF @ 10V | 9m Ω @ 14A, 10V | 2.3V @ 1mA | 27A Ta | 24nC @ 10V | 4.5V 10V | ±20V |
