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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFD9123PBF | Vishay Siliconix | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 4-DIP (0.300, 7.62mm) | 639.990485mg | 4 | 1.3W | 1 | Single | 4-DIP, Hexdip, HVMDIP | 390pF | 1A | 100V | -60V | P-Channel | 390pF @ 25V | 600mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 600 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25303W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd25303w1015-datasheets-5928.pdf | 6-UFBGA, DSBGA | Contains Lead | 6 | 6 | no | EAR99 | No | BOTTOM | BALL | CSD25303 | 6 | Single | 1.5W | 1 | Other Transistors | 3.9 ns | 8.6ns | 7.8 ns | 11.3 ns | 3A | 8V | SILICON | SWITCHING | 20V | 1.5W Ta | 3A | 0.092Ohm | -20V | P-Channel | 435pF @ 10V | 58m Ω @ 1.5A, 4.5V | 1V @ 250μA | 3A Tc | 4.3nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| BUK6E2R0-30C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6e2r030c127-datasheets-5934.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | not_compliant | 3 | 30V | 306W Tc | N-Channel | 14964pF @ 25V | 2.2m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 229nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ44VZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfz44vzstrl-datasheets-9194.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 62ns | 38 ns | 35 ns | 57A | 20V | SILICON | DRAIN | SWITCHING | 2V | 92W Tc | 60V | N-Channel | 1690pF @ 25V | 12m Ω @ 34A, 10V | 4V @ 250μA | 57A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRFR6215 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr6215trl-datasheets-4160.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 13A | 44A | 0.295Ohm | 310 mJ | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PH1225AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SOT-1023, 4-LFPAK | 121W | Single | 121W | LFPAK56, Power-SO8 | 6.38nF | 100A | 25V | 1.2mOhm | 25V | N-Channel | 6380pF @ 12V | 1.2mOhm @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 105nC @ 10V | 1.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6507-75C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk650775c127-datasheets-5960.pdf | TO-220-3 | 3 | 75V | 204W Tc | N-Channel | 7600pF @ 25V | 7.6m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 123nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1N60ATRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | No | 1 | Single | 36W | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 36W Tc | 7Ohm | 600V | N-Channel | 229pF @ 25V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFR4105Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr4105z-datasheets-5967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 24.5MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 40ns | 24 ns | 26 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | TO-252AA | 29 mJ | 55V | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRLR3410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirlr3410trl-datasheets-4649.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 39 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 79W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 16V | SILICON | DRAIN | SWITCHING | 79W Tc | TO-252AA | 60A | 100V | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRFH5204TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5204trpbf-datasheets-5889.pdf | 8-VQFN Exposed Pad | 5 | No SVHC | 8 | EAR99 | No | DUAL | 105W | 1 | FET General Purpose Power | R-PDSO-N5 | 8.4 ns | 14ns | 8.3 ns | 18 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 105W Tc | 400A | 0.0043Ohm | 40V | N-Channel | 2460pF @ 25V | 4 V | 4.3m Ω @ 50A, 10V | 4V @ 100μA | 22A Ta 100A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AUIRFS4310 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs4310trl-datasheets-2610.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 110ns | 78 ns | 68 ns | 130A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | 75A | 550A | 0.007Ohm | 980 mJ | 100V | N-Channel | 7670pF @ 50V | 2 V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRFB3207 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirfb3207-datasheets-5904.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 11 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 300W | 1 | FET General Purpose Power | 29 ns | 120ns | 74 ns | 68 ns | 75A | 20V | SILICON | SWITCHING | 2V | 300W Tc | TO-220AB | 720A | 0.0045Ohm | 75V | N-Channel | 7600pF @ 50V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRFR120Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfr120z-datasheets-5911.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 190MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | GULL WING | Single | 35W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.3 ns | 26ns | 23 ns | 27 ns | 8.7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 35W Tc | TO-252AA | 20 mJ | 100V | N-Channel | 310pF @ 25V | 2 V | 190m Ω @ 5.2A, 10V | 4V @ 25μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF9392TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9392trpbf-datasheets-5779.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 17 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 15 ns | 47ns | 58 ns | 73 ns | 9.8A | 25V | SILICON | SWITCHING | 30V | 2.5W Ta | -30V | P-Channel | 1270pF @ 25V | 12.1m Ω @ 7.8A, 20V | 2.4V @ 25μA | 9.8A Ta | 14nC @ 4.5V | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| AUIRLR3705Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-auirlr3705z-datasheets-5789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 13 Weeks | No SVHC | 8Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 150ns | 70 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-252AA | 89A | 55V | N-Channel | 2900pF @ 25V | 8m Ω @ 42A, 10V | 3V @ 250μA | 42A Tc | 66nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| IRFB3607GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb3607gpbf-datasheets-5797.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | 3 | No | Single | 140W | 1 | TO-220AB | 3.07nF | 16 ns | 110ns | 96 ns | 43 ns | 80A | 20V | 75V | 140W Tc | 9mOhm | 75V | N-Channel | 3070pF @ 50V | 9mOhm @ 46A, 10V | 4V @ 100μA | 80A Tc | 84nC @ 10V | 9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFU4104 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirfr4104-datasheets-5705.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.49mm | 2.39mm | 3 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | Single | 140W | 1 | FET General Purpose Power | 17 ns | 69ns | 36 ns | 37 ns | 119A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | 42A | 480A | 0.0055Ohm | 40V | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AUIRLR2905TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirlr2905trl-datasheets-5812.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | AEC-Q101 | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 42A | 160A | 0.03Ohm | 210 mJ | N-Channel | 1700pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| AUIRFR5410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirfr5410-datasheets-5821.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 66W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 58ns | 46 ns | 45 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 100V | -2V | 66W Tc | TO-252AA | 52A | 0.205Ohm | -100V | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IRF9392PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineon-irf9392pbf-datasheets-3227.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No | 2.5W | 1 | 8-SO | 1.27nF | 15 ns | 47ns | 58 ns | 73 ns | 9.8A | 25V | 30V | 2.5W Ta | -30V | P-Channel | 1270pF @ 25V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25μA | 9.8A Ta | 14nC @ 4.5V | 12.1 mΩ | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF9332PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf9332trpbf-datasheets-8064.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 15 ns | 47ns | 58 ns | 73 ns | 9.8A | 20V | SILICON | SWITCHING | 30V | -1.9V | 2.5W Ta | 54 ns | -30V | P-Channel | 1270pF @ 25V | -1.9 V | 17.5m Ω @ 9.8A, 10V | 2.4V @ 25μA | 9.8A Ta | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AUIRLR2703 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirlr2703trl-datasheets-1096.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 52 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.5 ns | 140ns | 20 ns | 12 ns | 23A | 16V | SILICON | DRAIN | SWITCHING | 1V | 45W Tc | TO-252AA | 20A | 96A | 0.045Ohm | 200 mJ | 30V | N-Channel | 450pF @ 25V | 1 V | 45m Ω @ 14A, 10V | 1V @ 250μA | 20A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||
| AUIRF540ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf540z-datasheets-7586.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 51ns | 39 ns | 43 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 2V | 92W Tc | 0.0265Ohm | 100V | N-Channel | 1770pF @ 25V | 2 V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| AUIRF4104S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirf4104-datasheets-8747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-XSSO-G2 | 16 ns | 130ns | 77 ns | 38 ns | 75A | 20V | SILICON | SWITCHING | 2V | 140W Tc | 470A | 0.0055Ohm | 220 mJ | 40V | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AUIRLR024NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirlr024ntrl-datasheets-5754.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 45W Tc | TO-252AA | 17A | 72A | 0.08Ohm | 68 mJ | N-Channel | 480pF @ 25V | 65m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 15nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| AUIRL1404ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirl1404zstrl-datasheets-1832.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 9.65mm | 4.83mm | Lead Free | 2 | 13 Weeks | No SVHC | 5.9MOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 180ns | 49 ns | 30 ns | 160A | 16V | SILICON | DRAIN | SWITCHING | 1.4V | 200W Tc | 790A | 490 mJ | 40V | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 160A Tc | 110nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| IRF6728MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6728mtrpbf-datasheets-5770.pdf | DirectFET™ Isometric MX | 3 | No SVHC | 4 | EAR99 | No | BOTTOM | 75W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 34ns | 19 ns | 19 ns | 23A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 75W Tc | 180A | 0.0025Ohm | 230 mJ | 30V | N-Channel | 4110pF @ 15V | 1.8 V | 2.5m Ω @ 23A, 10V | 2.35V @ 100μA | 23A Ta 140A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFR3710Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr3710z-datasheets-5661.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | No SVHC | 18MOhm | 3 | EAR99 | Tin | No | GULL WING | Single | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 43ns | 42 ns | 53 ns | 42A | 20V | SILICON | SWITCHING | 2V | 140W Tc | TO-252AA | 220A | 200 mJ | 100V | N-Channel | 2930pF @ 25V | 2 V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AUIRFP2907Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirfp2907z-datasheets-5669.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 310W | 1 | FET General Purpose Power | 19 ns | 140ns | 100 ns | 97 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 2V | 310W Tc | TO-247AC | 680A | 0.0045Ohm | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4.5m Ω @ 90A, 10V | 4V @ 250μA | 170A Tc | 270nC @ 10V | 10V | ±20V |
