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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Power Gain | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Turn Off Time-Max (toff) | Power Dissipation Ambient-Max | Transistor Type | Nominal Vgs | Voltage - Test |
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| ST9060C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 94V | 1.5GHz | RoHS Compliant | /files/stmicroelectronics-st9060c-datasheets-9529.pdf | M243 | compliant | 17.3dB | 80W | 12A | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD85025C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85025c-datasheets-9530.pdf | 7A | M243 | 2 | 52 Weeks | 243 | EAR99 | 93W | DUAL | FLAT | NOT SPECIFIED | PD85025 | 2 | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | 17.5dB | Not Qualified | R-CDFM-F2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 30W | 10W | 300mA | 7A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||
| BLP9H10-30GZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | SOT-1483-1 | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1004NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 68V | 2.17GHz | ROHS3 Compliant | 2014 | TO-270AA | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | 260 | 40 | 15.5dB | 10W | 130mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VS25GNR1 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 133V | 512MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-270BA | 2 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRFE6VS25 | 150°C | -40°C | 40 | 1 | FET General Purpose Power | 25.4dB | R-PDFM-F2 | Single | N-CHANNEL | 133V | METAL-OXIDE SEMICONDUCTOR | 25W | 10mA | 25W | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||
| BLP15M9S30Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD57030 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sd57030-datasheets-9619.pdf | 65V | 4A | M243 | Lead Free | 2 | 32 Weeks | 243 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 74W | DUAL | FLAT | SD57030 | 2 | Single | 74W | 1 | FET General Purpose Power | 15dB | R-PDFM-F2 | 58pF | 4A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 50mA | 4A | 65V | LDMOS | 28V | |||||||||||||||||||||||||||||||||||
| ARF463BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 500V | 81.36MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-arf463bg-datasheets-9476.pdf | 9A | TO-247-3 | Lead Free | 3 | 23 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | 180W | SINGLE | 1 | 15dB | R-PSFM-T3 | 9A | SINGLE | SOURCE | AMPLIFIER | 500V | METAL-OXIDE SEMICONDUCTOR | 100W | 50mA | 9A | 28ns | N-Channel | 125V | ||||||||||||||||||||||||||||||||||||||||||||
| BLM9D2325-20ABZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 28V | 2.3GHz~2.5GHz | /files/ampleonusainc-blm9d232520abz-datasheets-9628.pdf | 20-QFN Exposed Pad | 13 Weeks | 20W | LDMOS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G20LS-160PVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 65V | 1.805GHz~2GHz | /files/ampleonusainc-blc9g20ls160pvz-datasheets-7668.pdf | SOT1275-1 | 13 Weeks | 20dB | 38W | 1.4μA | 860mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP0427M9S20Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 400MHz~2.7GHz | ROHS3 Compliant | /files/ampleonusainc-blp0427m9s20z-datasheets-9400.pdf | SOT-1482-1 | 13 Weeks | 19dB | 20W | 1.4μA | 100mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATF-52189-BLK | Broadcom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Strip | 2 (1 Year) | SMD/SMT | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/broadcomlimited-atf52189blk-datasheets-9414.pdf | 4.5V | 500mA | TO-243AA | Lead Free | 3 | 16 Weeks | No SVHC | 4 | EAR99 | Tin | No | 200mA | e3 | 1.5W | SINGLE | FLAT | 260 | 40 | 1.5W | 1 | FET RF Small Signals | 16dB | R-PSSO-F3 | 1.5dB | 500mA | 1V | 4.5V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 7V | 7V | HIGH ELECTRON MOBILITY | 27dBm | 0.3A | E-pHEMT | 280 mV | ||||||||||||||||||||||||||||||
| MRF1535NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 520MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-mrf1535nt1-datasheets-9388.pdf | TO-272AA | 6 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | C BEND | 260 | MRF1535 | 200°C | 40 | 1 | FET General Purpose Power | 13.5dB | Not Qualified | R-PDFM-C6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 135W | 40V | METAL-OXIDE SEMICONDUCTOR | 35W | 6A | 500mA | 6A | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||
| PD85025-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85025stre-datasheets-6977.pdf | 7A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | Lead Free | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 79W | DUAL | GULL WING | 250 | PD85025 | 10 | Single | 30 | 79W | 1 | FET General Purpose Power | 17.3dB | Not Qualified | R-PDSO-G2 | 7A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 30W | 10W | 300mA | 7A | 40V | LDMOS | 13.6V | |||||||||||||||||||||||||||||||
| PD55035-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | 7A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 95W | DUAL | GULL WING | 250 | PD55035 | 10 | Single | 30 | 95W | 1 | FET General Purpose Power | R-PDSO-G2 | 7A | 20V | 16.9dB | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 35W | 200mA | 7A | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||
| BLC9G24XS-170AVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 65V | 2.3GHz~2.4GHz | /files/ampleonusainc-blc9g24xs170avy-datasheets-9470.pdf | SOT1275-3 | 13 Weeks | 15.5dB | 28W | 1.4μA | 250mA | LDMOS | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD85006L-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stevaltdr034v1-datasheets-4817.pdf | 2A | 8-PowerVDFN | Lead Free | 5 | 11 Weeks | 14 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 20.8W | QUAD | PD85006 | 5 | Single | 20.8W | 4 | FET General Purpose Power | 17dB | S-PQCC-N5 | 2A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 6W | 5W | 200mA | 2A | 40V | LDMOS | 13.6V | |||||||||||||||||||||||||||||||||||||
| BLF7G20LS-90P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf7g20ls90p118-datasheets-9215.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF7G20 | NOT SPECIFIED | 2 | 19.5dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 40W | 18A | 550mA | 18A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||
| BLC9G20LS-240PVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 1.81GHz~1.88GHz | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc9g20ls240pvz-datasheets-8449.pdf | SOT1275-3 | 13 Weeks | 18dB | DFM6 | 240W | 1.6A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G10LS-270,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 922.5MHz~957.5MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g10ls270gv12-datasheets-7992.pdf | SOT-502B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF8G10 | NOT SPECIFIED | 1 | 18.5dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 67W | 2A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||
| BLF8G10LS-160,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 920MHz~960MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf8g10ls160118-datasheets-8249.pdf | SOT-502B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF8G10 | NOT SPECIFIED | 1 | 19.7dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 35W | 1.1A | LDMOS | 30V | |||||||||||||||||||||||||||||||||||||||||||||
| BLC10G22LS-240PVTY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.11GHz~2.2GHz | ROHS3 Compliant | /files/ampleonusainc-blc10g22ls240pvtz-datasheets-7692.pdf | SOT1275-3 | 13 Weeks | 19.7dB | 60W | 1.4μA | 1.6A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC2425M8LS300PY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.45GHz | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc2425m8ls300py-datasheets-9363.pdf | SOT1250-1 | 13 Weeks | 17.5dB | DFM4 | 300W | 20mA | LDMOS (Dual), Common Source | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFG35003N6AT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 8V | 3.55GHz | DEPLETION MODE | ROHS3 Compliant | 2009 | /files/nxpusainc-mrfg35003n6at1-datasheets-9367.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRFG35003 | 85°C | 40 | 1 | FET RF Small Signal | 10dB | Not Qualified | R-PQSO-N4 | GALLIUM ARSENIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 8V | HIGH ELECTRON MOBILITY | 450mW | 180mA | pHEMT FET | 6V | |||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-40P,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf6g22ls40p118-datasheets-8199.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF6G22 | NOT SPECIFIED | 2 | 19dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 13.5W | 16A | 410mA | 16A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||
| SD2931-12MR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 125V | 175MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sd293112mr-datasheets-9293.pdf | 20A | M174MR | 4 | 32 Weeks | 5 | EAR99 | No | 389W | RADIAL | FLAT | SD2931 | 1 | 15dB | O-PRFM-F4 | 20A | 20V | SINGLE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 150W | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G22LS-160VTY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.11GHz~2.2GHz | /files/ampleonusainc-blc9g22ls160vtz-datasheets-7823.pdf | SOT-1271-3 | 13 Weeks | 18.4dB | 35W | 2.8μA | 864mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD2931-12W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 125V | 175MHz | ENHANCEMENT MODE | ROHS3 Compliant | 20A | M244 | Lead Free | 4 | 32 Weeks | EAR99 | YES | RADIAL | FLAT | NOT SPECIFIED | SD2931 | NOT SPECIFIED | 1 | 15dB | O-PRFM-F4 | SILICON | SINGLE | 125V | METAL-OXIDE SEMICONDUCTOR | 150W | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UF2840G | MACOM Technology Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -55°C | 65V | 100MHz~500MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/macomtechnologysolutions-uf2840g-datasheets-9236.pdf | 1mA | 4 | 25 Weeks | 5 | EAR99 | No | 116W | DUAL | FLAT | 4 | Single | 2 | FET General Purpose Power | 10dB | R-CDFM-F4 | 4A | 20V | SOURCE | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | 40W | 500mA | 4A | N-Channel | 28V | ||||||||||||||||||||||||||||||||||||||||||
| BLF6G27LS-40P,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf6g27ls40p118-datasheets-9222.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF6G27 | NOT SPECIFIED | 2 | 17.5dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 12W | 450mA | 15.5A | LDMOS (Dual), Common Source | 28V |
