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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Output Power | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Power Gain | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Breakdown Voltage | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BF999E6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 45MHz | DEPLETION MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bf999e6327htsa1-datasheets-9051.pdf | 20V | 30mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 6 Weeks | 3 | yes | EAR99 | Tin | No | e3 | Not Halogen Free | 200mW | DUAL | GULL WING | 1 | 1 | 27dB | 2.1dB | 30mA | 12V | SINGLE | METAL-OXIDE SEMICONDUCTOR | 10mA | N-Channel | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD54003-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd54003e-datasheets-8996.pdf | 25V | 4A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 25 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | 52.8W | DUAL | GULL WING | PD54003 | 10 | Single | 52.8W | 1 | FET General Purpose Power | 4A | 20V | 12dB | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | 4A | 25V | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BF886H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | SOT-343 | 4 | 6 Weeks | LOW NOISE | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-G4 | SILICON | SINGLE | AMPLIFIER | NPN | 0.025A | 4V | L B | 45000MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| J211-D74Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | 25V | DEPLETION MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-mmbfj211-datasheets-8603.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 38 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | NO | BOTTOM | THROUGH-HOLE | 150°C | 1 | Other Transistors | Not Qualified | O-PBCY-T3 | SILICON | SINGLE | AMPLIFIER | 0.35W | JUNCTION | VERY HIGH FREQUENCY B | 20mA | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET9045STR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 80V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9045str-datasheets-7046.pdf | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) | 2 | 52 Weeks | 3 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | DUAL | FLAT | 250 | LET9045 | 10 | 165°C | 30 | 1 | FET General Purpose Power | 18.5dB | Not Qualified | R-PDSO-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 160W | 80V | METAL-OXIDE SEMICONDUCTOR | 45W | 1μA | 300mA | 9A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||
| LET9120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 150°C | -65°C | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9120-datasheets-8854.pdf | 18A | M246 | 4 | 32 Weeks | 246 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 200W | FLAT | NOT SPECIFIED | LET9120 | 4 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 18dB | Not Qualified | R-PDFM-F4 | 18A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 150W | 400mA | LDMOS | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G22XS-400AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.11GHz~2.2GHz | /files/ampleonusainc-blc10g22xs400avtz-datasheets-8877.pdf | SOT-1258-4 | 13 Weeks | 17dB | 400W | 2.8μA | 800mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBF5486 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 400MHz | DEPLETION MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-mmbf5486-datasheets-8879.pdf | 25V | 10mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 1.3mm | Lead Free | 3 | 16 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | 8541.21.00.95 | e3 | 225mW | DUAL | GULL WING | MMBF5486 | Single | 225mW | 1 | Other Transistors | 4dB | 225mW | 20mA | -25V | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | -25V | 1 pF | N-Channel JFET | 15V | |||||||||||||||||||||||||||||||||||||||||||||
| LET9045C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 150°C | -65°C | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9045c-datasheets-8888.pdf | 9A | M243 | 2 | 32 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 108W | DUAL | FLAT | LET9045 | 2 | Single | 1 | FET General Purpose Power | 17.7dB | R-PDFM-F2 | 9A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 59W | 300mA | 9A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 934960262517 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF888H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 47GHz | ROHS3 Compliant | 2010 | /files/infineontechnologies-bf888h6327xtsa1-datasheets-8901.pdf | SOT-343 | 4 | 4 Weeks | yes | EAR99 | LOW NOISE | Tin | NPN | 160mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 160mW | 1 | R-PDSO-G4 | SINGLE | EMITTER | SWITCHING | 4V | 30mA | 47000MHz | 13V | 1.2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G27LS-100GVJ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g27ls100v112-datasheets-7928.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 1 | 17dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 900mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM10D1822-60ABGZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | /files/ampleonusainc-blm10d182260abgz-datasheets-8904.pdf | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G22LS-40P,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf6g22ls40p118-datasheets-8199.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF6G22 | NOT SPECIFIED | 2 | 19dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 13.5W | 16A | 410mA | 16A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBF5484 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 400MHz | DEPLETION MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-mmbf5486-datasheets-8879.pdf | 25V | 10mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 1.3mm | Lead Free | 3 | 16 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | 8541.21.00.95 | e3 | 225mW | DUAL | GULL WING | MBF5484 | Single | 225mW | 1 | Other Transistors | 4dB | 225mW | 5mA | -25V | AMPLIFIER | JUNCTION | -25V | 25V | 1 pF | N-Channel JFET | 15V | ||||||||||||||||||||||||||||||||||||||||||||
| PD85025TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85025stre-datasheets-6977.pdf | 7A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 79W | DUAL | GULL WING | NOT SPECIFIED | PD85025 | 10 | Single | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | 17.3dB | Not Qualified | R-PDSO-G2 | 7A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 30W | 10W | 300mA | 7A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||||||||
| BF256B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | DEPLETION MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-bf256b-datasheets-8944.pdf | 30V | 13mA | TO-226-3, TO-92-3 (TO-226AA) | 4.58mm | 4.58mm | 3.86mm | Lead Free | 3 | 6 Weeks | 200mg | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Copper, Silver, Tin | No | 8541.21.00.95 | e3 | Tin (Sn) | 350mW | BOTTOM | BF256 | Single | 350mW | 1 | Other Transistors | 13mA | -30V | AMPLIFIER | 30V | JUNCTION | ULTRA HIGH FREQUENCY B | N-Channel JFET | |||||||||||||||||||||||||||||||||||||||||||||||||
| ARF461AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | 1000V | 65MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-arf461ag-datasheets-8827.pdf | 6.5A | TO-247-3 | Lead Free | 3 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 250W | SINGLE | 3 | 1 | FET General Purpose Power | 15dB | R-PSFM-T3 | 6.5A | SINGLE | SOURCE | AMPLIFIER | METAL-OXIDE SEMICONDUCTOR | 150W | 25μA | TO-247AD | 1kV | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-100AVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.5GHz~2.69GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc8g27ls100avy-datasheets-8830.pdf | SOT1275-1 | 13 Weeks | 15.5dB | DFM6 | 17.8W | 250mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-180AVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.5GHz~2.69GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc8g27ls180avz-datasheets-7665.pdf | SOT1275-3 | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | 14dB | R-PQFP-X6 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 28W | 200mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF9G20LS-160VJ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf9g20ls160vj-datasheets-8326.pdf | SOT-1120B | 13 Weeks | 19.8dB | LDMOST | 35.5W | 800mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP0408H9S30Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM8G0710S-45ABGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 957.5MHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blm8g0710s45abgy-datasheets-8084.pdf | SOT-1212-2 | 13 Weeks | 35dB | 16-HSOP | 3W | 30mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXZ210N50L2 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-MOS™ | Tube | 1 (Unlimited) | 500V | 70MHz | ROHS3 Compliant | /files/ixysrf-ixz210n50l2-datasheets-8751.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | yes | 17dB | 390W | 10A | N-Channel | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 150-501N04A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DE | Tube | 1 (Unlimited) | 500V | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixysrf-150501n04a00-datasheets-8755.pdf | 6-SMD, Flat Lead Exposed Pad | 10 Weeks | 200W | 4.5A | 25μA | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1312HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 112V | 1.034GHz | ROHS3 Compliant | 2013 | /files/nxpusainc-mmrf1312gsr5-datasheets-6017.pdf | NI-1230-4S | 10 Weeks | EAR99 | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 19.6dB | 1000W | 100mA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF188XRU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 135V | 108MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf188xru-datasheets-8643.pdf | SOT539A | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 24.4dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 135V | METAL-OXIDE SEMICONDUCTOR | 1400W | 40mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP05H675XRGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 135V | 108MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blp05h675xrgy-datasheets-8027.pdf | SOT-1224-2 | 13 Weeks | 27dB | 75W | 20mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT05MP075NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 520MHz | ROHS3 Compliant | 2009 | TO-270AB | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | YES | 260 | 225°C | 40 | FET General Purpose Power | 18.5dB | Single | N-CHANNEL | 690W | METAL-OXIDE SEMICONDUCTOR | 70W | 400mA | LDMOS (Dual) | 12.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V10010NR4 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 100V | 1.09GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf6v10010nr4-datasheets-8776.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRF6V10010 | 200°C | 40 | 1 | FET General Purpose Power | 25dB | Not Qualified | R-PQCC-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 10W | 10mA | LDMOS | 50V |
