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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Technology | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Construction | RF/Microwave Device Type | Input Power-Max (CW) | Characteristic Impedance | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | VSWR-Max | Subcategory | Power Supplies | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Mounting Feature | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Power Dissipation Ambient-Max | Transistor Type | Voltage - Test |
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| BLC8G20LS-400AVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 1.81GHz~1.88GHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blc8g20ls400avy-datasheets-9934.pdf | SOT-1258-3 | 13 Weeks | 15.5dB | SOT-1258-3 | 85W | 800mA | LDMOS (Dual), Common Source | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM8G0710S-15PBY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 3 (168 Hours) | 65V | 957.5MHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blm8g0710s15pbgy-datasheets-7882.pdf | SOT-1211-3 | 13 Weeks | 36.1dB | 16-HSOPF | 1.5W | 15mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF300BN | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | Not Applicable | 27MHz~250MHz | RoHS Compliant | /files/nxpusainc-mrf300an50mhz-datasheets-0035.pdf | TO-247-3 | 12 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 18.7dB | 300W | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP15M9S30GZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP05H6150XRY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 135V | 108MHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blp05h6150xrgy-datasheets-8080.pdf | SOT-1223-2 | 13 Weeks | 27dB | 4-HSOPF | 150W | 100mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MW7IC2020NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | MOS | 2.14GHz | ROHS3 Compliant | 2009 | /files/nxpusainc-mw7ic2020nt1-datasheets-9654.pdf | 24-PowerQFN | 24 | 10 Weeks | EAR99 | 8542.33.00.01 | 1 | e3 | Matte Tin (Sn) | YES | MW7IC2020 | COMPONENT | NARROW BAND HIGH POWER | 37dBm | 50Ohm | 10 | RF/Microwave Amplifiers | 28V | 32.6dB | SURFACE MOUNT | 2.4W | 40mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||
| BLM10D2327-40ABZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | /files/ampleonusainc-blm10d232740abz-datasheets-9803.pdf | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6S9045NR1 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 66V | 880MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-mrfe6s9045nr1-datasheets-9623.pdf | TO-270AA | 2 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRFE6S9045 | 225°C | 40 | 1 | FET General Purpose Power | 22.1dB | Not Qualified | R-PDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 66V | METAL-OXIDE SEMICONDUCTOR | 10W | 350mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||
| CGH27030S | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tape & Reel (TR) | 3 (168 Hours) | 84V | 6GHz | RoHS Compliant | 2015 | 12-VFDFN Exposed Pad | 8 Weeks | 18.3dB | 12-DFN (4x3) | 30W | 200mA | HEMT | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF9G38-10GU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 28V | 3.4GHz~3.8GHz | SOT-975C | 26 Weeks | 10W | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM9D2327-25BZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 28V | 2.3GHz~2.7GHz | /files/ampleonusainc-blm9d232725bz-datasheets-9700.pdf | 20-QFN Exposed Pad | 13 Weeks | 25W | LDMOS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1315NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 66V | 880MHz | ROHS3 Compliant | 2014 | TO-270-2 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | 260 | 40 | 21.1dB | 14W | 450mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP05M7200Y | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 440MHz | ROHS3 Compliant | 2010 | /files/ampleonusainc-blp05m7200y-datasheets-9698.pdf | 4-HSOPF, SOT-1138 | 13 Weeks | 21dB | 4-HSOP | 210W | 2mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWT-A973 | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 5V | 500MHz~18GHz | DEPLETION MODE | RoHS Compliant | 2010 | 120mA | Nonstandard SMD | 6 Weeks | yes | LOW NOISE | unknown | e4 | Gold (Au) | NOT SPECIFIED | NOT SPECIFIED | 1 | 6.5dB | Not Qualified | 1.8dB | GALLIUM ARSENIDE | SINGLE | AMPLIFIER | N-CHANNEL | METAL SEMICONDUCTOR | 24.5dBm | 30mA | 0.1 pF | MESFET | 3V | ||||||||||||||||||||||||||||||||||||||||||||||
| MWT-773 | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 5V | 500MHz~26GHz | DEPLETION MODE | RoHS Compliant | 2010 | 98mA | Nonstandard SMD | 4 | 6 Weeks | yes | unknown | e4 | Gold (Au) | YES | UNSPECIFIED | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 8dB | Not Qualified | X-CXMW-F4 | 12dB | GALLIUM ARSENIDE | SINGLE | AMPLIFIER | N-CHANNEL | METAL SEMICONDUCTOR | 20dBm | 10mA | MESFET | 3V | |||||||||||||||||||||||||||||||||||||||||||
| BLF640U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf640u-datasheets-9772.pdf | SOT-538A | 13 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 18.5dB | 700mW | 100mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2I25D025NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.69GHz | ROHS3 Compliant | 2009 | /files/nxpusainc-afic10275nr1-datasheets-8471.pdf | TO-270-17 Variant, Flat Leads | 10 Weeks | EAR99 | 8542.33.00.01 | e3 | Tin (Sn) | 260 | 40 | 31.9dB | 3.2W | 59mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2I25D025GNR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.69GHz | ROHS3 Compliant | 2009 | /files/nxpusainc-afic10275nr1-datasheets-8471.pdf | TO-270-17 Variant, Gull Wing | 10 Weeks | EAR99 | 8542.33.00.01 | e3 | Tin (Sn) | 260 | 40 | 31.9dB | 3.2W | 59mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET9060TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 80V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9060tr-datasheets-7244.pdf | 12A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 3 | EAR99 | HIGH RELIABILITY | YES | DUAL | GULL WING | NOT SPECIFIED | LET9060 | 10 | NOT SPECIFIED | 1 | 17.2dB | R-PDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 60W | 300mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||
| BLM10D3438-35ABZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | /files/ampleonusainc-blm10d343835abz-datasheets-9767.pdf | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD57045TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 165°C | -65°C | 65V | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57045e-datasheets-9140.pdf | 5A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | No | e4 | NICKEL PALLADIUM GOLD | 73W | DUAL | GULL WING | PD57045 | 10 | 1 | FET General Purpose Power | 14.5dB | R-PDSO-G2 | 5A | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 250mA | 5A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||
| ST9045C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 100V | 1.5GHz | RoHS Compliant | /files/stmicroelectronics-st9045c-datasheets-9488.pdf | M243 | compliant | 18.5dB | 63W | 9A | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP0427M9S20GZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 400MHz~2.7GHz | ROHS3 Compliant | /files/ampleonusainc-blp0427m9s20z-datasheets-9400.pdf | SOT-1483-1 | 13 Weeks | 19dB | 20W | 1.4μA | 100mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT20S015GNR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2006 | TO-270BA | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | YES | 260 | 125°C | 40 | FET General Purpose Power | 17.6dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5W | 132mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP27M810Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.14GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp27m810z-datasheets-9406.pdf | 16-VDFN Exposed Pad | 13 Weeks | 17dB | 16-HVSON (6x4) | 2W | 110mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VRF161 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 170V | 30MHz | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/microsemicorporation-vrf161-datasheets-9518.pdf | 20A | M174 | 4 | 32 Weeks | SAMPLING (Last Updated: 3 weeks ago) | YES | RADIAL | FLAT | 200°C | 1 | 24dB | O-CRFM-F4 | SILICON | SINGLE | AMPLIFIER | 170V | METAL-OXIDE SEMICONDUCTOR | 200W | 250mA | 350W | N-Channel | 50V | |||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VS25NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 133V | 512MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-270AA | 2 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | MRFE6VS25 | 150°C | -40°C | 40 | 1 | FET General Purpose Power | 25.4dB | R-PDFM-F2 | Single | N-CHANNEL | 133V | METAL-OXIDE SEMICONDUCTOR | 25W | 10mA | 25W | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||
| BLC9G27LS-151AVY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.5GHz~2.69GHz | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc9g27ls151avy-datasheets-9525.pdf | SOT1275-3 | 13 Weeks | 15.6dB | DFM6 | 155W | 280mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ST9060C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 94V | 1.5GHz | RoHS Compliant | /files/stmicroelectronics-st9060c-datasheets-9529.pdf | M243 | compliant | 17.3dB | 80W | 12A | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD85025C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85025c-datasheets-9530.pdf | 7A | M243 | 2 | 52 Weeks | 243 | EAR99 | 93W | DUAL | FLAT | NOT SPECIFIED | PD85025 | 2 | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | 17.5dB | Not Qualified | R-CDFM-F2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 30W | 10W | 300mA | 7A | 40V | LDMOS | 13.6V |
