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ContactPD55035-E
PD55035-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-PD55035-E
- Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
- Stock: 9040
- Description: PD55035-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Number of Pins | 3 |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 95W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 7A |
| Frequency | 500MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | PD55035 |
| Pin Count | 10 |
| JESD-30 Code | R-PDSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 95W |
| Case Connection | SOURCE |
| Current - Test | 200mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 40V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Output Power | 35W |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 12.5V |
| Power Gain | 16.9dB |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PD55035-E Description
The PD55035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial, and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55035-E boasts the excellent gain, linearity, and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC-approved, high-power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
PD55035-E Features
Excellent thermal stability
Common source configuration
POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V
New RF plastic package
PD55035-E Applications
Automotive
Infotainment & cluster
Communications equipment
Broadband fixed line access
Personal electronics
Connected peripherals & printers
