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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Rds On Max | Capacitance - Input | Number of Terminals |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC072N03LD G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 8 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 57W | 30V | METAL-OXIDE SEMICONDUCTOR | 20A | 80A | 0.0094Ohm | 90 mJ | 6 | ||||||||||||||||||||||||||||||||||||
| CMLDM7484 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 0.45A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM8002AG TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | Other Transistors | P-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 0.28A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM3737 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | FET General Purpose Power | N-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 0.54A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7002AG TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | FET General Purpose Power | N-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 0.28A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7002AJ TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | MATTE TIN (315) | YES | DUAL | FLAT | 260 | 150°C | 10 | 2 | FET General Purpose Power | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | AMPLIFIER | N-CHANNEL | 0.35W | 60V | METAL-OXIDE SEMICONDUCTOR | 0.28A | 2Ohm | 5 pF | 6 | |||||||||||||||||||||||||||||||||||||||||
| PMDXB950UPE | Nexperia |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | RoHS Compliant | compliant | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO615N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | 150°C | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL | 2W | 60V | METAL-OXIDE SEMICONDUCTOR | 2.6A | 10.4A | 0.15Ohm | 60 mJ | 8 | |||||||||||||||||||||||||||||||||||||
| SSM6N37FE,LM(T | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | RoHS Compliant | 2014 | /files/toshiba-ssm6n37felmt-datasheets-7586.pdf | 16 Weeks | yes | unknown | 250mA | 20V | 150mW | 2.2 Ω | 12pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2108ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2108engrt-datasheets-9346.pdf | 1.7A | 100V | 190 mΩ | 22pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2107ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2107engrt-datasheets-9234.pdf | 1.7A | 100V | 320 mΩ | 16pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2105ENG | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2105eng-datasheets-5266.pdf | 22 Weeks | 38A | 80V | 14.5 mΩ | 300pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2101ENG | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2101eng-datasheets-5189.pdf | 22 Weeks | 38A | 60V | 11.5 mΩ | 300pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2103ENG | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2012 | /files/epc-epc2103eng-datasheets-5290.pdf | 23A | 80V | 5.5 mΩ | 760pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2102ENG | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2102eng-datasheets-4067.pdf | 22 Weeks | 23A | 60V | 4.4 mΩ | 830pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA3753GR-E1-AT | Renesas |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Tape & Reel (TR) | 150°C | -55°C | RoHS Compliant | SOP | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 8.5 ns | 3.7ns | 5.1 ns | 30 ns | 5A | 20V | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 1.12W | 5A | 56 mΩ | 640pF | |||||||||||||||||||||||||||||||||||||||||||||
| AO4614A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 150°C | -55°C | RoHS Compliant | 1999 | /files/alphaomegasemiconductor-ao4614a-datasheets-7523.pdf | SOIC | 16 Weeks | 8 | 5A | 40V | 2W | 31 mΩ | 404pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2111ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2100ENG | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2100eng-datasheets-7484.pdf | 22 Weeks | 38A | 30V | 8 mΩ | 380pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P47NU,LF(T | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Tape & Reel (TR) | RoHS Compliant | 2014 | /files/toshiba-ssm6p47nulft-datasheets-1455.pdf | 12 Weeks | 4A | 20V | 1W | 95 mΩ | 290pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N55NU,LF(T | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Tape & Reel (TR) | RoHS Compliant | 2014 | /files/toshiba-ssm6n55nulft-datasheets-1250.pdf | 12 Weeks | yes | 4A | 30V | 1W | 46 mΩ | 280pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2104ENG | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 150°C | -40°C | RoHS Compliant | 2015 | /files/epc-epc2104eng-datasheets-8858.pdf | 22 Weeks | 23A | 100V | 6.3 mΩ | 800pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1120DG4 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 1 | 125°C | -40°C | ENHANCEMENT MODE | RoHS Compliant | /files/texasinstruments-tps1120dg4-datasheets-7814.pdf | SOIC | 4.9mm | 1.58mm | 3.91mm | Lead Free | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | 8 | 840mW | 2 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.17A | 2V | SWITCHING | P-CHANNEL | -15V | METAL-OXIDE SEMICONDUCTOR | 840mW | 180mOhm | 15V | 180 mΩ | |||||||||||||||||||||||||||||
| UPA2384T1P-E1-A#YK1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2386T1P-SSA-A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0348 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8010A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | 150°C | -55°C | RoHS Compliant | 210.013267mg | 54W | 15 ns | 15ns | 11 ns | 40 ns | 75A | 20V | 30V | 1.3mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0346 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC0228 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| OP529,005 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download |
