TPS1120DG4

MOSFET Dual P-Ch Enh-Mode MOSFET


  • Manufacturer: Texas Instruments
  • NO: 815-TPS1120DG4
  • Package: SOIC
  • Datasheet: -
  • Stock: 10007
  • Description: MOSFET Dual P-Ch Enh-Mode MOSFET(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Pin Count 8
Number of Elements 2
Power Dissipation-Max 840mW
Operating Mode ENHANCEMENT MODE
Power Dissipation 840mW
Turn On Delay Time 4.5 ns
Transistor Application SWITCHING
Rise Time 10ns
Drain to Source Voltage (Vdss) -15V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.17A
Gate to Source Voltage (Vgs) 2V
Drain to Source Breakdown Voltage 15V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Height 1.58mm
Length 4.9mm
Width 3.91mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Package / Case SOIC
Number of Pins 8
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 1
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Operating Temperature 125°C
Min Operating Temperature -40°C
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260

In Stock

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