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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Series | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Datasheet | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | DS Breakdown Voltage-Min | FET Technology | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Number of Terminals | Mfr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FS50KM-2-AX#204 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Renesas Electronics America Inc | ||||||||||||||||||||||||||||||||||||||||||
| FS50KM-06-AX#E51 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Renesas Electronics America Inc | ||||||||||||||||||||||||||||||||||||||||||
| SFR9230BTMAM002 | Fairchild (ON Semiconductor) |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Fairchild Semiconductor | ||||||||||||||||||||||||||||||||||||||||||
| STM168026V | Analog Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Analog Devices Inc. | ||||||||||||||||||||||||||||||||||||||||||
| PA102FDG-VB | VBsemi Elec |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| G1005 | GOFORD |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| STF3NK90Z(046Y) | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| 7N65L-TQ2-R | UTC(Unisonic Tech) |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| 2SJ356-VB | VBsemi Elec |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| AP4407GM-VB | VBsemi Elec |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| BS250FTA-VB | VBsemi Elec |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| DMP2215L-7-VB | VBsemi Elec |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| SPP9435AS8RG-VB | VBsemi Elec |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||
| DMN63D8LV-7 | Diodes Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | /storage/upload/DMN63D8LV-7.pdf | |||||||||||||||||||||||||||||||||||||||||||
| DMN62D0UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | /files/import/DMN62D0UDW-7.pdf | |||||||||||||||||||||||||||||||||||||||||||
| UPA2451CTL-E1-A | RENESAS ELECTRONICS CORP |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | yes | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | 6 | 150°C | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 2.5W | 30V | METAL-OXIDE SEMICONDUCTOR | 8.2A | 0.032Ohm | 6 | ||||||||||||||||||
| NTMD4N03R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | [object Object] | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | DUAL | GULL WING | 240 | 8 | 150°C | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 2W | 30V | METAL-OXIDE SEMICONDUCTOR | 4A | 12A | 0.06Ohm | 80 mJ | 8 | ||||||||||||
| UPA2350T1G-E4-A | RENESAS ELECTRONICS CORP |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | yes | EAR99 | compliant | e6 | TIN BISMUTH | YES | BOTTOM | BALL | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | S-XBGA-B4 | SILICON | COMPLEX | SWITCHING | N-CHANNEL | 1.3W | METAL-OXIDE SEMICONDUCTOR | 4 | |||||||||||||||||||
| NTJD4401NT2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | Non-RoHS Compliant | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 240 | 6 | 150°C | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL | 0.55W | 20V | METAL-OXIDE SEMICONDUCTOR | 0.63A | 0.375Ohm | 5 pF | 6 | |||||||||||||||
| NTMD6P02R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | [object Object] | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 240 | 8 | 150°C | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.75W | 20V | METAL-OXIDE SEMICONDUCTOR | 4.8A | 0.033Ohm | 450 pF | 8 | |||||||||||||
| NTMD3P03R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | [object Object] | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 0.73W | 30V | METAL-OXIDE SEMICONDUCTOR | 2.34A | 0.085Ohm | 135 pF | 8 | |||||||||||||
| GWS9294 | Intersil Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | compliant | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||
| GWS9293 | Intersil Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | compliant | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||
| PMDXB600UNE | Nexperia |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | e3 | Tin (Sn) | IEC-60134 | YES | DUAL | NO LEAD | 150°C | -55°C | 2 | R-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 4.025W | 20V | METAL-OXIDE SEMICONDUCTOR | 0.6A | 0.62Ohm | 6 | ||||||||||||||||||
| CMLDM3757 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 0.54A | ||||||||||||||||||||||||||||||||||
| CMLDM5757 TR | Central Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | ENHANCEMENT MODE | RoHS Compliant | compliant | YES | 150°C | Other Transistors | P-CHANNEL | 0.35W | METAL-OXIDE SEMICONDUCTOR | 0.43A | ||||||||||||||||||||||||||||||||||
| BSO150N03MD G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.015Ohm | 8 | |||||||||||||||||
| CWDM305ND TR13 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | compliant | |||||||||||||||||||||||||||||||||||||||||||
| NX7002BKS | Nexperia |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | LOGIC LEVEL COMPATIBLE | compliant | e3 | Tin (Sn) | IEC-60134 | YES | DUAL | GULL WING | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 0.24A | 3.2Ohm | 6 | ||||||||||||||||||||||
| BSC750N10ND G | Infineon Technologies AG |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 8 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 26W | 100V | METAL-OXIDE SEMICONDUCTOR | 13A | 52A | 0.075Ohm | 17 mJ | 6 |
