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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Reverse Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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| APTCV60HM45BC20T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptcv60hm45bc20t3g-datasheets-5158.pdf | SP3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 250W | 1 | Insulated Gate BIP Transistors | 3.15nF | Boost Chopper, Full Bridge | 250W | 600V | 1.9V | 50A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75H60T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt75h60t1g-datasheets-5135.pdf | SP1 | 12 | 36 Weeks | 12 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | 12 | 4 | Insulated Gate BIP Transistors | 4.62nF | SILICON | Full Bridge Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | |||||||||||||||||||||||||||||||
| MIXA225RF1200TSF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/ixys-mixa225rf1200tsf-datasheets-5137.pdf | Module | 14 Weeks | 1.1kW | 1 | Insulated Gate BIP Transistors | Single | 1100W | 1.2kV | 2.1V | 360A | Standard | 1200V | 20V | 300μA | 2.1V @ 15V, 225A | PT | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||
| DF200R12W1H3FB11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EasyPACK™ | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-df200r12w1h3fb11boma1-datasheets-5138.pdf | Module | 18 | 32 Weeks | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XUFM-X18 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 20mW | 27 ns | Standard | 1200V | 30A | 475 ns | 1mA | 1.45V @ 15V, 30A | Trench Field Stop | Yes | 6.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| APTCV60HM45RCT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptcv60hm45rct3g-datasheets-5140.pdf | SP3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 250W | 1 | Insulated Gate BIP Transistors | 3.15nF | Full Bridge Inverter | 250W | 600V | 1.9V | 50A | Single Phase Bridge Rectifier | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB90SA120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgb90sa120u-datasheets-5143.pdf | SOT-227-4 | 16 Weeks | 4 | 862W | Single | SOT-227 | Single | 862W | 1.2kV | 3.9V | 149A | Standard | 1200V | 149A | 250μA | 3.9V @ 15V, 75A | NPT | No | |||||||||||||||||||||||||||||||||||||||||||||||
| BSM75GAL120DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | no | EAR99 | NO | UPPER | UNSPECIFIED | 7 | 1 | R-XUFM-X7 | SILICON | Single Switch | ISOLATED | POWER CONTROL | N-CHANNEL | 625W | 100 ns | Standard | 1200V | 105A | 520 ns | 1.4mA | 3V @ 15V, 75A | No | 5.5nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||
| F43L50R07W2H3FB11BPSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™2 | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | 16 Weeks | EAR99 | Three Phase Inverter | 20mW | Standard | 650V | 50A | 1mA | 1.8V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM75GB120DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | no | EAR99 | NO | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | SILICON | 2 Independent | ISOLATED | N-CHANNEL | 690W | 110 ns | Standard | 1200V | 170A | 420 ns | 5mA | 2.6V @ 15V, 75A | No | 5.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100H60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100h60tg-datasheets-5150.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 340W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 4 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X14 | 6.1nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 340W | 600V | 180 ns | 600V | 150A | Standard | 370 ns | 1.9 V | 250μA | 1.9V @ 15V, 100A | Trench Field Stop | Yes | 6.1nF @ 25V | |||||||||||||||||||||||||||||
| FP25R12KT4B16BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS50R06YL4BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 23 | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | R-XUFM-X23 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 202W | 55 ns | Standard | 600V | 55A | 160 ns | 5mA | 2.55V @ 15V, 50A | Yes | 200pF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||
| FP50R07N2E4B11BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~150°C | Bulk | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp50r07n2e4b11bosa1-datasheets-5126.pdf | Module | Contains Lead | 31 | 42 Weeks | 31 | EAR99 | UL APPROVED | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 43 ns | 650V | 70A | Standard | 70A | 265 ns | 1mA | 1.95V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | |||||||||||||||||||||||||||||||||||||
| FS75R07N2E4BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™2 | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs75r07n2e4bosa1-datasheets-5104.pdf | Module | 19 | 16 Weeks | no | EAR99 | UL APPROVED | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 28 | NOT SPECIFIED | 6 | R-XUFM-X19 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 45 ns | Standard | 650V | 75A | 320 ns | 1mA | 1.95V @ 15V, 75A | Trench Field Stop | Yes | 4.6nF @ 25V | |||||||||||||||||||||||||||||||||||||
| FS50R12KT4PB11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™ 2 | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs50r12kt4pb11bpsa1-datasheets-5128.pdf | Module | 25 | 16 Weeks | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | R-XUFM-X25 | SILICON | Three Phase Inverter | ISOLATED | N-CHANNEL | 20mW | 185 ns | Standard | 1200V | 100A | 490 ns | 1mA | 2.15V @ 15V, 50A | Trench Field Stop | Yes | 2.8nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| APTGLQ100DA120T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2013 | /files/microsemicorporation-aptglq100da120t1g-datasheets-5105.pdf | Module | 36 Weeks | SP1 | Boost Chopper | 520W | Standard | 1200V | 170A | 50μA | 2.42V @ 15V, 100A | Trench Field Stop | Yes | 6.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB90DA120U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgb90da120u-datasheets-5129.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | 16 Weeks | 4 | yes | EAR99 | NICKEL (197) | 862W | Single | 862W | 1.2kV | 1.2kV | 149A | Standard | 1200V | 250μA | 3.8V @ 15V, 75A | NPT | No | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETL015Y120H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsetl015y120h-datasheets-5106.pdf | EMIPAK-2B | 45 Weeks | EAR99 | unknown | 89W | 1.07nF | 89W | 1.2kV | 3.03V | 22A | Standard | 1200V | 75μA | 3.03V @ 15V, 15A | Trench | Yes | 1.07nF @ 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FS50R12KT4B15BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™2 | Screw | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs50r12kt4b15bosa1-datasheets-5132.pdf | Module | Lead Free | 28 | 16 Weeks | 28 | EAR99 | UL APPROVED | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 280W | 185 ns | 1.2kV | 50A | Standard | 1200V | 490 ns | 1mA | 2.15V @ 15V, 50A | Trench Field Stop | Yes | 2.8nF @ 25V | |||||||||||||||||||||||||||||||||||||
| F3L150R12W2H3B11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | 1 (Unlimited) | Non-RoHS Compliant | /files/infineontechnologies-f3l150r12w2h3b11bpsa1-datasheets-5108.pdf | Module | Contains Lead | 32 | 16 Weeks | EAR99 | UL APPROVED | Not Halogen Free | NO | UPPER | UNSPECIFIED | 4 | R-XUFM-X32 | SILICON | Three Phase Inverter | ISOLATED | GENERAL PURPOSE | N-CHANNEL | 500W | 210 ns | Standard | 1200V | 75A | 510 ns | 1mA | 1.75V @ 15V, 75A | Yes | 8.7nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| MUBW35-12A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Box | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/ixys-mubw3512a7-datasheets-5109.pdf | E2 | Lead Free | 24 | 20 Weeks | 24 | yes | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 225W | UPPER | UNSPECIFIED | MUBW | 24 | 7 | Insulated Gate BIP Transistors | 1.65nF | 100 ns | 500 ns | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 225W | 1.6kV | 1.2kV | 170 ns | 1.2kV | 50A | Three Phase Bridge Rectifier | 1200V | 570 ns | 3.1 V | 20V | 1.1mA | 3.1V @ 15V, 35A | NPT | Yes | 1.65nF @ 25V | |||||||||||||||||||||||||
| APTGTQ200A65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptgtq200a65t3g-datasheets-5110.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Half Bridge | 483W | Standard | 650V | 200A | 200μA | 2.2V @ 15V, 200A | Yes | 12nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FP35R12U1T4BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | 1 (Unlimited) | RoHS Compliant | 2002 | /files/infineontechnologies-fp35r12u1t4bpsa1-datasheets-5111.pdf | Module | 23 | no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 35 | NOT SPECIFIED | 7 | Not Qualified | R-XUFM-X23 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 43 ns | Standard | 1200V | 54A | 510 ns | 1mA | 2.25V @ 15V, 35A | Trench Field Stop | Yes | 2nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| MIXA80W1200PTEH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI25-12A7T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/ixys-mwi2512a7t-datasheets-5112.pdf | E2 | 107.5mm | 17mm | 45mm | 13 | 20 Weeks | 24 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) | 225W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 24 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X13 | 1.65nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 225W | 1.2kV | 170 ns | 1.2kV | 50A | Standard | 1200V | 570 ns | 2.7 V | 20V | 2mA | 2.7V @ 15V, 25A | NPT | Yes | 1.65nF @ 25V | |||||||||||||||||||||||
| BSM150GB60DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Panel, Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | 2000 | /files/infineontechnologies-bsm150gb60dlchosa1-datasheets-5113.pdf | Module | 94mm | 30.5mm | 34mm | Lead Free | 7 | 16 Weeks | 7 | no | EAR99 | Not Halogen Free | 730W | UPPER | UNSPECIFIED | 7 | Dual | 730W | 2 | SILICON | Single | ISOLATED | N-CHANNEL | 595W | 600V | 1.95V | 155 ns | 600V | 180A | Standard | 260 ns | 500μA | 2.45V @ 15V, 150A | No | 6.5nF @ 25V | |||||||||||||||||||||||||||||||||
| APTGT100DU120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100du120tg-datasheets-5116.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 7.2nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 1.2kV | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 2.1 V | 250μA | 2.1V @ 15V, 100A | Trench Field Stop | Yes | 7.2nF @ 25V | |||||||||||||||||||||||||||
| FP50R07N2E4BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp50r07n2e4bosa1-datasheets-5118.pdf | Module | 12 Weeks | no | EAR99 | compliant | NOT SPECIFIED | NOT SPECIFIED | Three Phase Inverter | Standard | 650V | 70A | 1mA | 1.95V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FPF2C110BI07AS2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-fpf2c110bi07as2-datasheets-5120.pdf | 30-DIP Module | 9 Weeks | 45g | yes | 2.5kV | Half Bridge | 300W | 2.3V | Standard | 650V | 40A | 250μA | 2.3V @ 15V, 40A | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FP25R12U1T4BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp25r12u1t4bpsa1-datasheets-5075.pdf | Module | 23 | no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 35 | NOT SPECIFIED | 7 | Not Qualified | R-XUFM-X23 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 190W | 47 ns | Standard | 1200V | 39A | 520 ns | 1mA | 2.25V @ 15V, 25A | Trench Field Stop | Yes | 1.45nF @ 25V |
