Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Forward Current | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Reverse Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DDB6U100N16RRBOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Discrete Semicondutor | EconoBRIDGE™ | PCB, Screw | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 1999 | /files/infineontechnologies-ddb6u100n16rrbosa1-datasheets-5266.pdf | Module | 107.5mm | 17mm | 45mm | Contains Lead | 17 | 10 Weeks | 17 | no | EAR99 | Not Halogen Free | UPPER | UNSPECIFIED | 17 | Single | 1 | 60A | 100A | SILICON | Single Chopper | ISOLATED | POWER CONTROL | 350W | 5mA | 1.6kV | 1.6kV | 1.6kV | 50A | Standard | 1200V | 1mA | 3.2V @ 20V, 50A | No | 3.3nF @ 25V | ||||||||||||||||||||||||||||||||||
GSID150A120S6A4 | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Chassis Mount | -40°C~150°C | ROHS3 Compliant | /files/semiq-gsid150a120s6a4-datasheets-5286.pdf | Module | 8 Weeks | Module | Single | 1035W | Standard | 1200V | 275A | 1mA | 1.9V @ 15V, 150A | Yes | 20.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP35R12KT4B15BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp35r12kt4b15bosa1-datasheets-5267.pdf | Module | Contains Lead | 14 Weeks | 23 | EAR99 | Not Halogen Free | NOT SPECIFIED | NOT SPECIFIED | Three Phase Inverter | 210W | Standard | 1200V | 35A | 1mA | 2.15V @ 15V, 35A | Trench Field Stop | Yes | 2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM75GAR120DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | no | EAR99 | NO | UPPER | UNSPECIFIED | 1 | R-XUFM-X7 | SILICON | Single | N-CHANNEL | 235W | Standard | 1200V | 30A | 400μA | 2.2V @ 15V, 15A | Trench Field Stop | No | 1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
FZ300R12KE3GHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Panel, Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fz300r12ke3ghosa1-datasheets-5269.pdf | Module | 106.4mm | 36.5mm | 61.4mm | Lead Free | 5 | 14 Weeks | 5 | yes | EAR99 | Not Halogen Free | 1.45kW | UPPER | UNSPECIFIED | 5 | 1.45kW | 1 | SILICON | Single | ISOLATED | N-CHANNEL | 1450W | 1.2kV | 1.7V | 400 ns | 1.2kV | 480A | Standard | 1200V | 830 ns | 5mA | 2.15V @ 15V, 300A | Trench Field Stop | No | 21nF @ 25V | |||||||||||||||||||||||||||||||||||
MWI75-06A7T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi7506a7-datasheets-5258.pdf | E2 | 107.5mm | 17mm | 45mm | Lead Free | 13 | 20 Weeks | 2 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 280W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 19 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X13 | 3.2nF | 50 ns | 270 ns | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 280W | 600V | 100 ns | 2.6V | 90A | Standard | 310 ns | 1.3mA | 2.6V @ 15V, 75A | NPT | Yes | 3.2nF @ 25V | |||||||||||||||||||||||||||
APTGT300DA60G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt300da60g-datasheets-5271.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.15kW | UPPER | UNSPECIFIED | 5 | 1 | 24nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1150W | 600V | 170 ns | 600V | 430A | Standard | 320 ns | 350μA | 1.8V @ 15V, 300A | Trench Field Stop | No | 24nF @ 25V | ||||||||||||||||||||||||||||||||||||||
MIXA60WH1200TEH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | /files/ixys-mixa60wh1200teh-datasheets-5273.pdf | E3 | 20 Weeks | 195W | 1 | Insulated Gate BIP Transistors | Three Phase Inverter with Brake | 290W | 1.2kV | 1.2kV | Three Phase Bridge Rectifier | 1200V | 85A | 2.1 V | 20V | 500μA | 2.1V @ 15V, 55A | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGT200DA120D3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt200da120d3g-datasheets-5274.pdf | D-3 Module | 7 | 36 Weeks | 5 | yes | EAR99 | e1 | TIN SILVER COPPER | 1.05kW | UPPER | UNSPECIFIED | 7 | 1 | R-XUFM-X7 | 14nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1050W | 1.2kV | 400 ns | 1.2kV | 300A | Standard | 1200V | 830 ns | 6mA | 2.1V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V | |||||||||||||||||||||||||||||||||||||
VS-GT200TP065N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgt200tp065n-datasheets-5276.pdf | INT-A-Pak | 12 Weeks | 7 | EAR99 | 600W | Single | Half Bridge | 600W | 650V | 2.12V | 221A | Standard | 60μA | 2.12V @ 15V, 200A | Trench | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGT400DA60D3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt400da60d3g-datasheets-5279.pdf | D-3 Module | 5 | 36 Weeks | 11 | EAR99 | 1.25kW | UPPER | UNSPECIFIED | 11 | 1 | Insulated Gate BIP Transistors | R-XUFM-X5 | 24nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1250W | 600V | 190 ns | 1.9V | 500A | Standard | 600 ns | 20V | 500μA | 1.9V @ 15V, 400A | Trench Field Stop | No | 24nF @ 25V | |||||||||||||||||||||||||||||||||||||||
MWI75-06A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi7506a7-datasheets-5258.pdf | E2 | 107.5mm | 17mm | 45mm | Lead Free | 11 | 20 Weeks | 18 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 280W | UPPER | UNSPECIFIED | MWI | 17 | 6 | Insulated Gate BIP Transistors | R-XUFM-X11 | 3.2nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 280W | 600V | 100 ns | 600V | 90A | Standard | 310 ns | 2.6 V | 20V | 1.3mA | 2.6V @ 15V, 75A | NPT | No | 3.2nF @ 25V | |||||||||||||||||||||||||||||
MWI50-12A7T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi5012a7t-datasheets-5259.pdf | E2 | Lead Free | 13 | 20 Weeks | 2 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 350W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 19 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X13 | 3.3nF | 100 ns | 500 ns | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 350W | 1.2kV | 170 ns | 2.7V | 85A | Standard | 1200V | 570 ns | 4mA | 2.7V @ 15V, 50A | NPT | Yes | 3.3nF @ 25V | |||||||||||||||||||||||||||||
MIXG330PF1200TSF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS100R07N2E4B11BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fs100r07n2e4b11bosa1-datasheets-5235.pdf | Module | 25 | EAR99 | UL APPROVED | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | R-XUFM-X25 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 20mW | 100 ns | Standard | 650V | 125A | 370 ns | 1mA | 1.95V @ 15V, 100A | Trench Field Stop | Yes | 6.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
MWI100-06A8 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi10006a8-datasheets-5260.pdf | E3 | 122mm | 17mm | 62mm | 19 | 32 Weeks | 19 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 410W | UPPER | UNSPECIFIED | MWI | 19 | 6 | Insulated Gate BIP Transistors | 4.3nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 410W | 600V | 36 ns | 600V | 130A | Standard | 180 ns | 2.5 V | 20V | 1.2mA | 2.5V @ 15V, 100A | NPT | No | 4.3nF @ 25V | |||||||||||||||||||||||||||||||
FD200R12KE3HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | Not Applicable | Non-RoHS Compliant | 2012 | /files/infineontechnologies-fd200r12ke3hosa1-datasheets-5237.pdf | Module | Lead Free | 5 | 14 Weeks | yes | EAR99 | Not Halogen Free | NO | UPPER | UNSPECIFIED | 5 | 1 | R-XUFM-X5 | SILICON | Single Chopper | ISOLATED | N-CHANNEL | 1050W | 400 ns | Standard | 1200V | 830 ns | 5mA | 2.15V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||
APTGT150A120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150a120tg-datasheets-5239.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 690W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X12 | 10.7nF | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 335 ns | 1.2kV | 220A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 150A | Trench Field Stop | Yes | 10.7nF @ 25V | |||||||||||||||||||||||||||||||||
APTGT150DU120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt150du120tg-datasheets-5241.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 690W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X12 | 10.7nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 690W | 1.2kV | 335 ns | 2.1V | 220A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 150A | Trench Field Stop | Yes | 10.7nF @ 25V | |||||||||||||||||||||||||||||||||
FP35R12KT4B16BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | Module | 12 Weeks | Three Phase Inverter | 210W | Three Phase Bridge Rectifier | 1200V | 70A | 1mA | 2.25V @ 15V, 35A | Trench Field Stop | Yes | 2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM100GB120DLCKHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | no | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X7 | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 830W | 110 ns | Standard | 1200V | 100A | 480 ns | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||
MID300-12A4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-mid30012a4-datasheets-5244.pdf | Y3-DCB | 110mm | 30mm | 62mm | 5 | 28 Weeks | 5 | yes | UL RECOGNIZED | 1.38kW | UPPER | UNSPECIFIED | MID | 7 | 1 | Insulated Gate BIP Transistors | 13nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1380W | 1.2kV | 1.2kV | 160 ns | 1.2kV | 330A | Standard | 1200V | 690 ns | 2.7 V | 20V | 13mA | 2.7V @ 15V, 200A | NPT | No | 13nF @ 25V | |||||||||||||||||||||||||||||||
BSM200GB60DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | 2000 | /files/infineontechnologies-bsm200gb60dlchosa1-datasheets-5245.pdf | Module | 94mm | 30.5mm | 34mm | Lead Free | 7 | 14 Weeks | 34 | no | EAR99 | Not Halogen Free | 445W | UPPER | UNSPECIFIED | 7 | Dual | 445W | 2 | R-XUFM-X7 | SILICON | Single | ISOLATED | N-CHANNEL | 730W | 600V | 1.95V | 229 ns | 600V | 230A | Standard | 326 ns | 500μA | 2.45V @ 15V, 200A | No | 9nF @ 25V | |||||||||||||||||||||||||||||||||||
APTGT75H120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt75h120tg-datasheets-5249.pdf | SP4 | 36 Weeks | 20 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 357W | SP4 | 5.34nF | Full Bridge Inverter | 357W | 1.2kV | 1.2kV | 110A | Standard | 1200V | 110A | 250μA | 2.1V @ 15V, 75A | Trench Field Stop | Yes | 5.34nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
APTGT150H60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150h60tg-datasheets-5251.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | 14 | 4 | R-XUFM-X14 | 9.2nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 600V | 225A | Standard | 370 ns | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | Yes | 9.2nF @ 25V | ||||||||||||||||||||||||||||||||||||
APTGT100A120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2011 | /files/microsemicorporation-aptgt100a120tg-datasheets-5253.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 7.2nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 1.2kV | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 2.1 V | 250μA | 2.1V @ 15V, 100A | Trench Field Stop | Yes | 7.2nF @ 25V | ||||||||||||||||||||||||||||||
F450R12KS4BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-f450r12ks4bosa1-datasheets-5255.pdf | Module | Contains Lead | 24 | 16 Weeks | 24 | EAR99 | UL RECOGNIZED | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 355W | 190 ns | Standard | 1200V | 70A | 390 ns | 5mA | 3.75V @ 15V, 50A | Yes | 3.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
APTGT100A170TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100a170tg-datasheets-5256.pdf | SP4 | Lead Free | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 560W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 9nF | 370 ns | 650 ns | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 560W | 1.7kV | 450 ns | 1.7kV | 150A | Standard | 1700V | 1100 ns | 2.4 V | 250μA | 2.4V @ 15V, 100A | Trench Field Stop | Yes | 9nF @ 25V | |||||||||||||||||||||||||||
DF200R12KE3HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | 2012 | /files/infineontechnologies-df200r12ke3hosa1-datasheets-5229.pdf | Module | Lead Free | 5 | 14 Weeks | 5 | yes | EAR99 | Not Halogen Free | UPPER | UNSPECIFIED | 5 | 1.04kW | 1 | SILICON | Single | ISOLATED | N-CHANNEL | 1040W | 1.7V | 400 ns | 1.2kV | 295A | Standard | 1200V | 830 ns | 5mA | 2.15V @ 15V, 200A | No | 14nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
MWI25-12A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/ixys-mwi2512a7t-datasheets-5112.pdf | E2 | 11 | 16 Weeks | 2 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 225W | UPPER | UNSPECIFIED | MWI | 20 | 6 | Insulated Gate BIP Transistors | R-XUFM-X11 | 1.65nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 225W | 1.2kV | 170 ns | 2.7V | 50A | Standard | 1200V | 570 ns | 2mA | 2.7V @ 15V, 25A | NPT | No | 1.65nF @ 25V |
Please send RFQ , we will respond immediately.