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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Power - Max | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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| APTGT200DA120D3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt200da120d3g-datasheets-5274.pdf | D-3 Module | 7 | 36 Weeks | 5 | yes | EAR99 | e1 | TIN SILVER COPPER | 1.05kW | UPPER | UNSPECIFIED | 7 | 1 | R-XUFM-X7 | 14nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1050W | 1.2kV | 400 ns | 1.2kV | 300A | Standard | 1200V | 830 ns | 6mA | 2.1V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V | ||||||||||||||||||||||||||||||||||||
| VS-GT200TP065N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgt200tp065n-datasheets-5276.pdf | INT-A-Pak | 12 Weeks | 7 | EAR99 | 600W | Single | Half Bridge | 600W | 650V | 2.12V | 221A | Standard | 60μA | 2.12V @ 15V, 200A | Trench | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400DA60D3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt400da60d3g-datasheets-5279.pdf | D-3 Module | 5 | 36 Weeks | 11 | EAR99 | 1.25kW | UPPER | UNSPECIFIED | 11 | 1 | Insulated Gate BIP Transistors | R-XUFM-X5 | 24nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1250W | 600V | 190 ns | 1.9V | 500A | Standard | 600 ns | 20V | 500μA | 1.9V @ 15V, 400A | Trench Field Stop | No | 24nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| APTGT300SK60G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt300sk60g-datasheets-5281.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.15kW | UPPER | UNSPECIFIED | 5 | 1 | 24nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1150W | 600V | 170 ns | 600V | 430A | Standard | 320 ns | 350μA | 1.8V @ 15V, 300A | Trench Field Stop | No | 24nF @ 25V | |||||||||||||||||||||||||||||||||||||
| BSM50GD60DLCBOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 17 | EAR99 | NO | UPPER | UNSPECIFIED | 17 | 6 | R-XUFM-X17 | SILICON | Three Phase Inverter | ISOLATED | N-CHANNEL | 250W | 52 ns | Standard | 600V | 70A | 151 ns | 500μA | 2.45V @ 15V, 50A | No | 2.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DF160R12W2H3_B11 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2013 | 19 | 28 Weeks | no | UL APPROVED | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-XUFM-X19 | SILICON | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 50A | 1200V | 49 ns | 375 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM35GD120DN2E3224BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | 17 | EAR99 | NO | UPPER | UNSPECIFIED | 17 | 6 | R-XUFM-X17 | SILICON | Three Phase Inverter | ISOLATED | N-CHANNEL | 280W | 120 ns | Standard | 1200V | 50A | 450 ns | 1mA | 3.2V @ 15V, 35A | No | 2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FPF2C8P2NL07A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-fpf2c8p2nl07a-datasheets-5261.pdf | F2 Module | 4 Weeks | 45g | yes | EAR99 | 8542.39.00.01 | 135W | NOT SPECIFIED | NOT SPECIFIED | 2.5kV | Three Phase | 135W | 650V | 2.2V | 30A | Standard | 250μA | 2.2V @ 15V, 30A | Field Stop | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||
| MIXG120W1200TEH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | E3 | 20 Weeks | Three Phase Inverter | 625W | Standard | 1200V | 186A | 2mA | 2V @ 15V, 100A | PT | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM30GD60DLCBOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 17 | yes | EAR99 | NO | UPPER | UNSPECIFIED | 17 | 6 | R-XUFM-X17 | SILICON | Three Phase Inverter | ISOLATED | N-CHANNEL | 135W | 39 ns | Standard | 600V | 40A | 103 ns | 500μA | 2.45V @ 15V, 30A | No | 1.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200SK120G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt200sk120g-datasheets-5284.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 890W | UPPER | UNSPECIFIED | 5 | 1 | 14nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 890W | 1.2kV | 340 ns | 1.2kV | 280A | Standard | 1200V | 610 ns | 350μA | 2.1V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V | |||||||||||||||||||||||||||||||||||||
| APTGT150DU120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt150du120tg-datasheets-5241.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 690W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X12 | 10.7nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 690W | 1.2kV | 335 ns | 2.1V | 220A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 150A | Trench Field Stop | Yes | 10.7nF @ 25V | ||||||||||||||||||||||||||||||||
| FP35R12KT4B16BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | Module | 12 Weeks | Three Phase Inverter | 210W | Three Phase Bridge Rectifier | 1200V | 70A | 1mA | 2.25V @ 15V, 35A | Trench Field Stop | Yes | 2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM100GB120DLCKHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | no | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X7 | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 830W | 110 ns | Standard | 1200V | 100A | 480 ns | Yes | |||||||||||||||||||||||||||||||||||||||||||||||
| MID300-12A4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-mid30012a4-datasheets-5244.pdf | Y3-DCB | 110mm | 30mm | 62mm | 5 | 28 Weeks | 5 | yes | UL RECOGNIZED | 1.38kW | UPPER | UNSPECIFIED | MID | 7 | 1 | Insulated Gate BIP Transistors | 13nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1380W | 1.2kV | 1.2kV | 160 ns | 1.2kV | 330A | Standard | 1200V | 690 ns | 2.7 V | 20V | 13mA | 2.7V @ 15V, 200A | NPT | No | 13nF @ 25V | ||||||||||||||||||||||||||||||
| BSM200GB60DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | 2000 | /files/infineontechnologies-bsm200gb60dlchosa1-datasheets-5245.pdf | Module | 94mm | 30.5mm | 34mm | Lead Free | 7 | 14 Weeks | 34 | no | EAR99 | Not Halogen Free | 445W | UPPER | UNSPECIFIED | 7 | Dual | 445W | 2 | R-XUFM-X7 | SILICON | Single | ISOLATED | N-CHANNEL | 730W | 600V | 1.95V | 229 ns | 600V | 230A | Standard | 326 ns | 500μA | 2.45V @ 15V, 200A | No | 9nF @ 25V | ||||||||||||||||||||||||||||||||||
| APTGT75H120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt75h120tg-datasheets-5249.pdf | SP4 | 36 Weeks | 20 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 357W | SP4 | 5.34nF | Full Bridge Inverter | 357W | 1.2kV | 1.2kV | 110A | Standard | 1200V | 110A | 250μA | 2.1V @ 15V, 75A | Trench Field Stop | Yes | 5.34nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150H60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150h60tg-datasheets-5251.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | 14 | 4 | R-XUFM-X14 | 9.2nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 600V | 225A | Standard | 370 ns | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | Yes | 9.2nF @ 25V | |||||||||||||||||||||||||||||||||||
| APTGT100A120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2011 | /files/microsemicorporation-aptgt100a120tg-datasheets-5253.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 7.2nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 1.2kV | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 2.1 V | 250μA | 2.1V @ 15V, 100A | Trench Field Stop | Yes | 7.2nF @ 25V | |||||||||||||||||||||||||||||
| F450R12KS4BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-f450r12ks4bosa1-datasheets-5255.pdf | Module | Contains Lead | 24 | 16 Weeks | 24 | EAR99 | UL RECOGNIZED | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 355W | 190 ns | Standard | 1200V | 70A | 390 ns | 5mA | 3.75V @ 15V, 50A | Yes | 3.4nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| APTGT100A170TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100a170tg-datasheets-5256.pdf | SP4 | Lead Free | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 560W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 9nF | 370 ns | 650 ns | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 560W | 1.7kV | 450 ns | 1.7kV | 150A | Standard | 1700V | 1100 ns | 2.4 V | 250μA | 2.4V @ 15V, 100A | Trench Field Stop | Yes | 9nF @ 25V | ||||||||||||||||||||||||||
| MWI75-06A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi7506a7-datasheets-5258.pdf | E2 | 107.5mm | 17mm | 45mm | Lead Free | 11 | 20 Weeks | 18 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 280W | UPPER | UNSPECIFIED | MWI | 17 | 6 | Insulated Gate BIP Transistors | R-XUFM-X11 | 3.2nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 280W | 600V | 100 ns | 600V | 90A | Standard | 310 ns | 2.6 V | 20V | 1.3mA | 2.6V @ 15V, 75A | NPT | No | 3.2nF @ 25V | ||||||||||||||||||||||||||||
| MWI50-12A7T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi5012a7t-datasheets-5259.pdf | E2 | Lead Free | 13 | 20 Weeks | 2 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 350W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 19 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X13 | 3.3nF | 100 ns | 500 ns | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 350W | 1.2kV | 170 ns | 2.7V | 85A | Standard | 1200V | 570 ns | 4mA | 2.7V @ 15V, 50A | NPT | Yes | 3.3nF @ 25V | ||||||||||||||||||||||||||||
| MIXG330PF1200TSF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS100R07N2E4B11BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fs100r07n2e4b11bosa1-datasheets-5235.pdf | Module | 25 | EAR99 | UL APPROVED | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | R-XUFM-X25 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 20mW | 100 ns | Standard | 650V | 125A | 370 ns | 1mA | 1.95V @ 15V, 100A | Trench Field Stop | Yes | 6.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| MWI100-06A8 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi10006a8-datasheets-5260.pdf | E3 | 122mm | 17mm | 62mm | 19 | 32 Weeks | 19 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 410W | UPPER | UNSPECIFIED | MWI | 19 | 6 | Insulated Gate BIP Transistors | 4.3nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 410W | 600V | 36 ns | 600V | 130A | Standard | 180 ns | 2.5 V | 20V | 1.2mA | 2.5V @ 15V, 100A | NPT | No | 4.3nF @ 25V | ||||||||||||||||||||||||||||||
| FD200R12KE3HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | Not Applicable | Non-RoHS Compliant | 2012 | /files/infineontechnologies-fd200r12ke3hosa1-datasheets-5237.pdf | Module | Lead Free | 5 | 14 Weeks | yes | EAR99 | Not Halogen Free | NO | UPPER | UNSPECIFIED | 5 | 1 | R-XUFM-X5 | SILICON | Single Chopper | ISOLATED | N-CHANNEL | 1050W | 400 ns | Standard | 1200V | 830 ns | 5mA | 2.15V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
| APTGT150A120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150a120tg-datasheets-5239.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 690W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X12 | 10.7nF | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 335 ns | 1.2kV | 220A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 150A | Trench Field Stop | Yes | 10.7nF @ 25V | ||||||||||||||||||||||||||||||||
| MWI50-12T7T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/ixys-mwi5012t7t-datasheets-5218.pdf | E2 | Lead Free | 21 | 20 Weeks | 2 | yes | UL RECOGNIZED | 270W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 28 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | 3.5nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 270W | 1.2kV | 140 ns | 2.15V | 80A | Standard | 1200V | 610 ns | 4mA | 2.15V @ 15V, 50A | Trench | Yes | 3.5nF @ 25V | |||||||||||||||||||||||||||||||||
| MID200-12A4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | 150°C TJ | Box | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/ixys-mid20012a4-datasheets-5219.pdf | Y3-DCB | 110mm | 30mm | 62mm | Lead Free | 5 | 28 Weeks | No SVHC | 7 | yes | EAR99 | UL RECOGNIZED | 1.13kW | UPPER | UNSPECIFIED | MID | 7 | 1 | Insulated Gate BIP Transistors | R-XUFM-X5 | 11nF | 100 ns | 650 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1130W | 1.2kV | 2.2V | 150 ns | 1.2kV | 270A | Standard | 1200V | 700 ns | 3 V | 20V | 10mA | 2.7V @ 15V, 150A | NPT | No | 11nF @ 25V |
