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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | DS Breakdown Voltage-Min | FET Technology | Power - Max | Reverse Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Control Mode | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FS75R12W2T4B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs75r12w2t4b11boma1-datasheets-5047.pdf | Module | Contains Lead | 18 | 16 Weeks | 18 | EAR99 | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | SILICON | Full Bridge | POWER CONTROL | N-CHANNEL | 375W | 185 ns | Standard | 1200V | 107A | 490 ns | 1mA | 2.15V @ 15V, 75A | Trench Field Stop | Yes | 4.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50A170TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50a170tg-datasheets-5049.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 312W | UPPER | UNSPECIFIED | 12 | Dual | 2 | R-XUFM-X12 | 4.4nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 312W | 1.7kV | 450 ns | 2.4V | 75A | Standard | 1700V | 1100 ns | 250μA | 2.4V @ 15V, 50A | Trench Field Stop | Yes | 4.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| IXBN75N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-ixbn75n170-datasheets-5051.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 4 | yes | UL RECOGNIZED | Nickel (Ni) | 625W | UPPER | UNSPECIFIED | IXB*75N170 | 4 | 1 | Insulated Gate BIP Transistors | 6.93nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 625W | 1.7kV | 277 ns | 3.1V | 145A | Standard | 1700V | 840 ns | 20V | 5.5V | 25μA | 3.1V @ 15V, 75A | No | 6.93nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
| BSM100GB60DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | 2000 | /files/infineontechnologies-bsm100gb60dlchosa1-datasheets-5052.pdf | Module | 7 | no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | SILICON | Single | ISOLATED | N-CHANNEL | 445W | 37 ns | Standard | 600V | 130A | 180 ns | 500μA | 2.45V @ 15V, 100A | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50DH120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50dh120tg-datasheets-5056.pdf | SP4 | Lead Free | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 14 | Dual | 2 | R-XUFM-X14 | 3.6nF | 90 ns | 420 ns | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 277W | 1.2kV | 140 ns | 1.2kV | 75A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 50A | Trench Field Stop | Yes | 3.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| APTGT150DH60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt150dh60tg-datasheets-5058.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X14 | 9.2nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 600V | 225A | Standard | 370 ns | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | Yes | 9.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| BSM35GB120DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | no | EAR99 | NO | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | SILICON | Half Bridge | ISOLATED | N-CHANNEL | 280W | 120 ns | Standard | 1200V | 50A | 450 ns | 1mA | 3.2V @ 15V, 35A | No | 2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200A60T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt200a60t3ag-datasheets-5032.pdf | SP3 | 10 | 36 Weeks | 20 | EAR99 | No | 750W | UPPER | UNSPECIFIED | 25 | Dual | 2 | R-XUFM-X10 | 12.3nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 750W | 600V | 180 ns | 600V | 290A | Standard | 370 ns | 250μA | 1.9V @ 15V, 200A | Trench Field Stop | Yes | 12.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| FS3L30R07W2H3FB11BPSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EasyPACK™ 2B | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-fs3l30r07w2h3fb11bpsa2-datasheets-5035.pdf | Module | 32 | 16 Weeks | EAR99 | UL APPROVED | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X32 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 20mW | 88 ns | Standard | 650V | 30A | 350 ns | 1mA | 1.9V @ 15V, 30A | Trench Field Stop | Yes | 1.65nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ100H65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptgtq100h65t3g-datasheets-5037.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Full Bridge | 250W | Standard | 650V | 100A | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200DU60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt200du60tg-datasheets-5038.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 625W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X12 | 12.3nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 625W | 600V | 180 ns | 600V | 290A | Standard | 370 ns | 250μA | 1.9V @ 15V, 200A | Trench Field Stop | Yes | 12.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| BSM50GAL120DN2HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | Single Switch | 400W | Standard | 1200V | 78A | 1mA | 3V @ 15V, 50A | No | 3.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS35R12KT3BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™ 2 | PCB, Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs35r12kt3bosa1-datasheets-5040.pdf | Module | 107.5mm | 17mm | 45mm | Contains Lead | 28 | 16 Weeks | 28 | no | EAR99 | Not Halogen Free | 210W | UPPER | UNSPECIFIED | NOT SPECIFIED | 28 | NOT SPECIFIED | 6 | Not Qualified | SILICON | Full Bridge Inverter | ISOLATED | N-CHANNEL | 210W | 140 ns | 1.2kV | 55A | Standard | 1200V | 610 ns | 5mA | 2.15V @ 15V, 35A | Yes | 2.5nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
| MIXA81H1200EH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-mixa81h1200eh-datasheets-5015.pdf | E3 | 14 | UL RECOGNIZED | 390W | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | R-XUFM-X14 | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 390W | 1.2kV | 110 ns | 2.2V | 120A | Standard | 1200V | 350 ns | 2.1 V | 20V | 200μA | 2.2V @ 15V, 77A | PT | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| MUBW25-12A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | ROHS3 Compliant | 2004 | /files/ixys-mubw2512a7-datasheets-5041.pdf | 1.6kV | 25A | E2 | Lead Free | 24 | 20 Weeks | 2 | yes | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 225W | UPPER | UNSPECIFIED | NOT SPECIFIED | MUBW | 24 | NOT SPECIFIED | 7 | Not Qualified | 1.65nF | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 225W | 1.6kV | 1.2kV | 90 ns | 2.7V | 50A | Three Phase Bridge Rectifier | 1200V | 350 ns | 900μA | 2.7V @ 15V, 25A | NPT | Yes | 1.65nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| FP25R12KT4B15BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp25r12kt4b15bosa1-datasheets-5016.pdf | Module | Contains Lead | 24 | 12 Weeks | EAR99 | UL APPROVED | Not Halogen Free | NO | 160W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | R-XUFM-X24 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 1.85V | 210 ns | 1.2kV | Standard | 1200V | 25A | 620 ns | 1mA | 2.15V @ 15V, 25A | Trench Field Stop | Yes | 1.45nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ100A120T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq100a120t3ag-datasheets-5017.pdf | SP3 | Lead Free | 36 Weeks | 3 | 650W | NOT SPECIFIED | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | 6.15nF | 30 ns | 290 ns | Half Bridge | 650W | 1.2kV | 2.4V | 185A | Standard | 1200V | 20V | 50μA | 2.4V @ 15V, 100A | Trench Field Stop | Yes | 6.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF80R12W2H3FB11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™2 | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-df80r12w2h3fb11bpsa1-datasheets-5020.pdf | Module | 22 | 16 Weeks | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XUFM-X22 | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 20mW | 40 ns | Standard | 1200V | 20A | 375 ns | 1mA | 1.7V @ 15V, 20A | Trench Field Stop | Yes | 2.35nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI35-12A7T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/ixys-mwi3512a7t-datasheets-5023.pdf | E2 | 19 | 16 Weeks | 19 | yes | ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 280W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | NOT SPECIFIED | 6 | Not Qualified | 2nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 280W | 1.2kV | 180 ns | 1.2kV | 62A | Standard | 1200V | 570 ns | 2mA | 2.8V @ 15V, 35A | NPT | Yes | 2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| APTGL40X120T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl40x120t3g-datasheets-5024.pdf | SP3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 220W | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | 1.95nF | Three Phase Inverter | 220W | 1.2kV | 2.25V | 65A | Standard | 1200V | 20V | 250μA | 2.25V @ 15V, 35A | Trench Field Stop | Yes | 1.95nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F3L225R07W2H3PB63BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-f3l225r07w2h3pb63bpsa1-datasheets-5026.pdf | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGE200N60B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/ixys-ixge200n60b-datasheets-5027.pdf | ISOPLUS227™ | 4 | 16 Weeks | 4 | yes | 416W | UPPER | UNSPECIFIED | IXG*200N60 | 4 | 1 | Insulated Gate BIP Transistors | 11nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 416W | 600V | 120 ns | 600V | 160A | Standard | 540 ns | 2.1 V | 20V | 200μA | 2.3V @ 15V, 120A | No | 11nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSM50GB120DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | 7 | 16 Weeks | no | EAR99 | NO | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | SILICON | Half Bridge | ISOLATED | N-CHANNEL | 460W | 110 ns | Standard | 1200V | 115A | 370 ns | 5mA | 2.6V @ 15V, 50A | No | 3.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100SK170TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100sk170tg-datasheets-5029.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 560W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 9nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 560W | 1.7kV | 450 ns | 1.7kV | 150A | Standard | 1700V | 1100 ns | 2.4 V | 250μA | 2.4V @ 15V, 100A | Trench Field Stop | Yes | 9nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| FAM65CR51DZ2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Not Applicable | HYBRID | ROHS3 Compliant | /files/onsemiconductor-fam65cr51dz2-datasheets-5031.pdf | 12-SSIP Exposed Pad, Formed Leads | 12 | 20 Weeks | yes | 1 | NO | ZIG-ZAG | SWITCHING REGULATOR | R-XZFM-T12 | AEC-Q101 | 2 Independent | 160W | VOLTAGE-MODE | Standard | 650V | 33A | No | 4.86nF @ 400V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI80-12T6K | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi8012t6k-datasheets-5007.pdf | E1 | 13 | 20 Weeks | 1 | yes | UL RECOGNIZED | 270W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 24 | NOT SPECIFIED | 6 | Not Qualified | 3.6nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 270W | 1.2kV | 140 ns | 2.4V | 80A | Standard | 1200V | 610 ns | 1mA | 2.4V @ 15V, 50A | Trench | Yes | 3.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
| APTGLQ40DDA120CT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptglq40dda120ct3g-datasheets-5008.pdf | SP6 | Lead Free | 22 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | 250W | Dual | SP6 | 2.3nF | Dual Boost Chopper | 250W | 1.2kV | 2.4V | 75A | Standard | 1200V | 75A | 100μA | 2.4V @ 15V, 40A | Trench Field Stop | Yes | 2.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB2U50N08W1RB23BOMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ddb2u50n08w1rb23boma2-datasheets-4983.pdf | Module | 9 | 16 Weeks | EAR99 | NO | UPPER | UNSPECIFIED | 1 | R-XUFM-X9 | SILICON | 2 Independent | ISOLATED | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 60A | 100A | 0.2Ohm | Standard | No | 14nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75X60T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt75x60t3g-datasheets-5010.pdf | SP3 | 25 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X25 | 4.62nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 1.9V | 100A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| APTGLQ50TL65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq50tl65t3g-datasheets-4985.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Three Level Inverter | 175W | Standard | 650V | 70A | 50μA | 2.3V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V |
