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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Power - Max | Max Repetitive Reverse Voltage (Vrrm) | Reverse Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
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| F3L15R12W2H3B27BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-f3l15r12w2h3b27boma1-datasheets-4934.pdf | Module | Contains Lead | 16 Weeks | 34 | Not Halogen Free | 3 Independent | 145W | 1.2kV | 20A | Standard | 1200V | 1mA | 2.4V @ 15V, 15A | Yes | 875pF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50H120T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50h120t3g-datasheets-4957.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 270W | UPPER | UNSPECIFIED | 25 | 4 | R-XUFM-X25 | 3.6nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 270W | 1.2kV | 140 ns | 2.1V | 75A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 50A | Trench Field Stop | Yes | 3.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| BSM10GD120DN2E3224BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | Module | 17 | EAR99 | NO | UPPER | UNSPECIFIED | 17 | 6 | R-XUFM-X17 | SILICON | Full Bridge | ISOLATED | N-CHANNEL | 80W | 105 ns | Standard | 1200V | 15A | 460 ns | 400μA | 3.2V @ 15V, 10A | No | 530pF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FAM65HR51DS2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Not Applicable | ROHS3 Compliant | /files/onsemiconductor-fam65hr51ds2-datasheets-4959.pdf | 8 Weeks | yes | e3 | Tin (Sn) | POWER SUPPLY SUPPORT CIRCUIT | Half Bridge Inverter | 135W | Standard | 650V | 33A | No | 4.86nF @ 400V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DH60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100dh60tg-datasheets-4935.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 340W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X14 | 6.1nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 340W | 600V | 180 ns | 600V | 150A | Standard | 370 ns | 1.9 V | 250μA | 1.9V @ 15V, 100A | Trench Field Stop | Yes | 6.1nF @ 25V | ||||||||||||||||||||||||||||||||||||
| FS75R07W2E3B11ABOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2006 | /files/infineontechnologies-fs75r07w2e3b11aboma1-datasheets-4936.pdf | Module | Contains Lead | 18 | 39 Weeks | 18 | EAR99 | Not Halogen Free | 275W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 650V | 1.7V | 44 ns | 650V | 95A | 258 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS25R12KT3BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™ 2 | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs25r12kt3bosa1-datasheets-4939.pdf | Module | Contains Lead | 28 | 16 Weeks | no | EAR99 | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 28 | NOT SPECIFIED | 6 | Not Qualified | R-XUFM-X28 | SILICON | Full Bridge | ISOLATED | N-CHANNEL | 145W | 140 ns | Standard | 1200V | 40A | 610 ns | 5mA | 2.15V @ 15V, 25A | Trench Field Stop | Yes | 1.8nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||
| F3L100R12W2H3B11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~150°C | 1 (Unlimited) | RoHS Compliant | 2002 | /files/infineontechnologies-f3l100r12w2h3b11bpsa1-datasheets-4941.pdf | Module | Contains Lead | 32 | 16 Weeks | EAR99 | UL APPROVED | Tin | Not Halogen Free | UPPER | UNSPECIFIED | 4 | R-XUFM-X32 | SILICON | Three Phase Inverter | ISOLATED | GENERAL PURPOSE | N-CHANNEL | 375W | 175 ns | 1.2kV | Standard | 1200V | 100A | 465 ns | 1mA | 1.75V @ 15V, 50A | Yes | 6.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ200SK65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | /files/microsemicorporation-aptgtq200sk65t3g-datasheets-4942.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Buck Chopper | 483W | Standard | 650V | 200A | 200μA | 2.2V @ 15V, 200A | Yes | 12nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM10GD120DN2BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 17 | EAR99 | NO | UPPER | UNSPECIFIED | 17 | 150°C | 6 | Not Qualified | R-XUFM-X17 | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 15A | 1200V | 105 ns | 460 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI30-06A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi3006a7-datasheets-4943.pdf | E2 | 107.5mm | 17mm | 45mm | Lead Free | 11 | 20 Weeks | 2 | yes | UL RECOGNIZED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 140W | UPPER | UNSPECIFIED | MWI | 17 | 6 | Insulated Gate BIP Transistors | R-XUFM-X11 | 1.6nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 140W | 600V | 100 ns | 2.4V | 45A | Standard | 310 ns | 600μA | 2.4V @ 15V, 30A | NPT | No | 1.6nF @ 25V | |||||||||||||||||||||||||||||||||||||
| FP30R06YE3B4BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50DU120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50du120tg-datasheets-4944.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 12 | Dual | 2 | R-XUFM-X12 | 3.6nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 277W | 1.2kV | 140 ns | 1.2kV | 75A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 50A | Trench Field Stop | Yes | 3.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| MG1215H-XBN2MM | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/littelfuseinc-mg1215hxbn2mm-datasheets-4946.pdf | Module | 10 Weeks | 179.999996g | EAR99 | unknown | 105W | NOT SPECIFIED | NOT SPECIFIED | 1.1nF | Three Phase Inverter with Brake | 105W | 1.2kV | 1.9V | 2.15V | 25A | Three Phase Bridge Rectifier | 1200V | 50μA | 2.15V @ 15V, 15A | Yes | 1.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ100DDA65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptgtq100dda65t3g-datasheets-4950.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Dual Boost Chopper | 250W | Standard | 650V | 100A | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL60TL120T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl60tl120t3g-datasheets-4951.pdf | SP3 | 16 | 36 Weeks | 32 | EAR99 | No | 280W | UPPER | UNSPECIFIED | 25 | 4 | Insulated Gate BIP Transistors | R-XUFM-X16 | 2.77nF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 280W | 1.2kV | 80 ns | 1.2kV | 80A | Standard | 1200V | 370 ns | 2.2 V | 20V | 1mA | 2.2V @ 15V, 50A | Trench Field Stop | Yes | 2.77nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| VS-GT140DA60U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsgt140da60u-datasheets-4928.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | 20 Weeks | 4 | yes | EAR99 | NICKEL (197) | 652W | Single | 652W | 600V | 600V | 200A | Standard | 100μA | 2V @ 15V, 100A | Trench | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ75H65T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq75h65t1g-datasheets-4953.pdf | SP1 | Lead Free | 36 Weeks | 1 | 250W | 1 | Insulated Gate BIP Transistors | 4.62nF | 19 ns | 197 ns | Full Bridge | 250W | 650V | 2.3V | 150A | Standard | 20V | 100μA | 2.3V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUBW10-06A7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | ROHS3 Compliant | 2002 | /files/ixys-mubw1006a7-datasheets-4896.pdf | 1.6kV | 19A | E2 | Contains Lead | 24 | 20 Weeks | 21 | yes | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 85W | UPPER | UNSPECIFIED | NOT SPECIFIED | MUBW | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X24 | 600pF | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 85W | 1.6kV | 600V | 80 ns | 600V | 20A | Three Phase Bridge Rectifier | 260 ns | 2.3 V | 20V | 600μA | 2.3V @ 15V, 10A | NPT | Yes | 0.6nF @ 25V | |||||||||||||||||||||||||||||||||
| APTGT50X60T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt50x60t3g-datasheets-4897.pdf | SP3 | 73.4mm | 11.5mm | 40.8mm | Lead Free | 25 | 36 Weeks | 32 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 176W | UPPER | UNSPECIFIED | 25 | 6 | Insulated Gate BIP Transistors | R-XUFM-X25 | 3.15nF | 110 ns | 200 ns | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 176W | 600V | 1.5V | 170 ns | 600V | 80A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||
| APTGL40H120T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl40h120t1g-datasheets-4901.pdf | SP1 | 36 Weeks | 12 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | No | 220W | 1 | Insulated Gate BIP Transistors | 1.95nF | Full Bridge | 220W | 1.2kV | 1.2kV | 65A | Standard | 1200V | 2.25 V | 20V | 250μA | 2.25V @ 15V, 35A | Trench Field Stop | Yes | 1.95nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM50GB60DLCHOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | /files/infineontechnologies-bsm50gb60dlchosa1-datasheets-4902.pdf | Module | 94mm | 30.5mm | 34mm | Lead Free | 7 | 14 Weeks | 34 | no | EAR99 | Not Halogen Free | 280W | UPPER | UNSPECIFIED | 7 | Dual | 2 | R-XUFM-X7 | SILICON | Single | ISOLATED | N-CHANNEL | 280W | 600V | 2.2V | 52 ns | 600V | 75A | Standard | 151 ns | 500μA | 2.45V @ 15V, 50A | No | 2.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| APTCV40H60CT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptcv40h60ct1g-datasheets-4906.pdf | SP1 | 12 | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 176W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 3.15nF | SILICON | Full Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 176W | 600V | 170 ns | 1.9V | 80A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| DF200R12W1H3B27BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | Non-RoHS Compliant | 2002 | /files/infineontechnologies-df200r12w1h3b27boma1-datasheets-4912.pdf | Module | Contains Lead | 18 | 16 Weeks | UL APPROVED | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XUFM-X18 | SILICON | 2 Independent | ISOLATED | POWER CONTROL | N-CHANNEL | 375W | 40 ns | Standard | 1200V | 30A | 475 ns | 1mA | 1.3V @ 15V, 30A | Yes | 2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| MUBW15-12T7 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2006 | E2 | 24 | 32 Weeks | 2 | yes | FAST SWITCHING, LOW SATURATION VOLTAGE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 140W | UPPER | UNSPECIFIED | NOT SPECIFIED | MUBW | 24 | NOT SPECIFIED | 7 | Not Qualified | 1.1nF | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 140W | 1.6kV | 1.2kV | 140 ns | 2.15V | 30A | Three Phase Bridge Rectifier | 1200V | 610 ns | 2.7mA | 2.15V @ 15V, 15A | Trench | Yes | 1.1nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| MII100-12A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | ROHS3 Compliant | 2000 | /files/ixys-mii10012a3-datasheets-4915.pdf | 1.2kV | 135A | Y4-M5 | 94mm | 30mm | 34mm | Lead Free | 7 | 24 Weeks | No SVHC | 7 | yes | EAR99 | UL RECOGNIZED | 560W | UPPER | UNSPECIFIED | MII | Dual | 2 | Insulated Gate BIP Transistors | 5.5nF | 100 ns | 50ns | 650 ns | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1.2kV | 1.2kV | 2.2V | 150 ns | 1.2kV | 135A | Standard | 1200V | 700 ns | 3 V | 20V | 5mA | 2.7V @ 15V, 75A | NPT | No | 5.5nF @ 25V | |||||||||||||||||||||||||||||
| APTGT75DA120TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt75da120tg-datasheets-4916.pdf | SP4 | 12 | 36 Weeks | 20 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X12 | 5.34nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 357W | 1.2kV | 335 ns | 1.2kV | 110A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 75A | Trench Field Stop | Yes | 5.34nF @ 25V | |||||||||||||||||||||||||||||||||||||
| FP15R12YT3BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | Module | Three Phase Inverter | 110W | Three Phase Bridge Rectifier | 1200V | 25A | 5mA | 2.15V @ 15V, 15A | Yes | 1.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FPF1C2P5MF07AM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 1996 | /files/onsemiconductor-fpf1c2p5mf07am-datasheets-4918.pdf | F1 Module | 23g | No SVHC | yes | 231W | 2.5kV | Full Bridge Inverter | 231W | 620V | 60V | 1.6V | 39A | Single Phase Bridge Rectifier | 25μA | 1.6V @ 15V, 30A | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI60-12T6K | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/ixys-mwi6012t6k-datasheets-4922.pdf | E1 | 13 | 32 Weeks | 1 | yes | UL RECOGNIZED | 200W | UPPER | UNSPECIFIED | NOT SPECIFIED | MWI | 24 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | 2.53nF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 200W | 1.2kV | 140 ns | 2.3V | 58A | Standard | 1200V | 610 ns | 20V | 500μA | 2.3V @ 15V, 35A | Trench | Yes | 2.53nF @ 25V |
