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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Repetitive Peak Reverse Voltage | Trigger Device Type | DC Gate Trigger Current-Max | Repetitive Peak Off-state Voltage | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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| DFB2505 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-dfb2580-datasheets-7221.pdf | 4-SIP, TS-6P | 4 | 11 Weeks | 7g | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | UL RECOGNIZED | No | e3 | Tin (Sn) | Single | 1 | Bridge Rectifier Diodes | 25A | 1.1V | 300A | ISOLATED | SILICON | 350A | 10μA | 50V | 350A | Single Phase | 1 | 35V | 10μA @ 50V | 1.1V @ 25A | |||||||||||||||||||||||||||||||||||||||||
| BU15085S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 870mV | 200A | 5μA | ISOLATED | SILICON | 200A | 5μA | 800V | Single Phase | 15A | 1 | 5μA @ 800V | 1.05V @ 7.5A | ||||||||||||||||||||||||||||||||||||
| TS40P05GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 20A | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DFB2510 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-dfb2580-datasheets-7221.pdf | 4-SIP, TS-6P | 4 | 11 Weeks | 7g | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | UL RECOGNIZED | No | e3 | Tin (Sn) | Single | 1 | Bridge Rectifier Diodes | 25A | 1.1V | 300A | ISOLATED | SILICON | 350A | 10μA | 100V | 350A | Single Phase | 1 | 10μA @ 100V | 1.1V @ 25A | ||||||||||||||||||||||||||||||||||||||||||
| TS40P07GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS35P06GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS40P06GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 12 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU2006-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 3.5A | 240A | 5μA | ISOLATED | SILICON | 5μA | 600V | Single Phase | 1 | 600V | 5μA @ 600V | 1.05V @ 10A | ||||||||||||||||||||||||||||||||||||||||||
| TS35P07GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU1508-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 200A | 1 | 3.4A | 800V | 5μA @ 800V | 1.05V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||
| BU1510-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 200A | 1 | 3.4A | 1kV | 5μA @ 1000V | 1.05V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||
| GSIB6A20N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib6a40nm345-datasheets-0451.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 150A | 1 | 2.8A | 200V | 10μA @ 200V | 1V @ 3A | 15A | |||||||||||||||||||||||||||||||||||||||||||||
| BU1010A5S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 90A | 1 | 3A | 1kV | 5μA @ 1000V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||
| GSIB6A40N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib6a40nm345-datasheets-0451.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 400V | Single Phase | 150A | 1 | 2.8A | 400V | 10μA @ 400V | 1V @ 3A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||
| BU12105S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 1.05V | 150A | 5μA | ISOLATED | SILICON | 150A | 5μA | 1kV | 150A | Single Phase | 12A | 1 | 5μA @ 1000V | 1.05V @ 6A | ||||||||||||||||||||||||||||||||||||
| TS35P05GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-2KBP01 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs2kbp06-datasheets-9803.pdf | 2A | 4-SIP, D-44 | 17.5mm | 15mm | 6.8mm | 4 | 14 Weeks | Unknown | 4 | EAR99 | No | WIRE | 2KBP* | Single | 1 | 2A | 1V | 63A | 10μA | SILICON | 63A | 10μA | 100V | 63A | Single Phase | 1 | 2A | 1V @ 1A | ||||||||||||||||||||||||||||||||||||||||||||
| TS35P06GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ601G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2009 | /files/diodesincorporated-kbj606g-datasheets-5084.pdf | 100V | 6A | 4-SIP, KBJ | 80pF | 25.2mm | 19.3mm | 9.7mm | Exempt | 4 | 8 Weeks | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 6A | 6A | 1V | 170A | ISOLATED | SILICON | 5μA | 100V | 170A | Single Phase | 1 | 70V | 5μA @ 100V | 1V @ 3A | ||||||||||||||||||||||||||||||||
| GSIB6A60N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib6a40nm345-datasheets-0451.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | NO | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 150A | 1 | 2.8A | 600V | 10μA @ 600V | 1V @ 3A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||
| MP10005G-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-mp1010gg-datasheets-0910.pdf | 4-Square, MP-8 | 4 | 12 Weeks | 8 | EAR99 | UL RECOGNIZED | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-XUFM-W4 | 200A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 175A | 1 | 10A | 50V | 10μA @ 50V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||||
| BU1008A5S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 90A | 1 | 3A | 800V | 5μA @ 800V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||
| KBU3508-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu3510g-datasheets-9733.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 400A | 1 | 35A | 800V | 10μA @ 800V | 1.1V @ 17.5A | 4.2A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBPC3506W/1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | Non-RoHS Compliant | 2007 | 600V | 35A | 4-Square, GBPC-W | 300pF | 28.8mm | 7.62mm | 28.8mm | Contains Lead | 4 | GBPC3506 | 1 | GBPC-W | 35A | 1.1V | 400A | 5μA | 400A | Single Phase | 600V | 5μA @ 600V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||
| 94MT160KB | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | 125°C | -40°C | Standard | Non-RoHS Compliant | 1997 | /files/vishaysemiconductordiodesdivision-104mt100kb-datasheets-3085.pdf | 1.6kV | 90A | MTK | Contains Lead | MTK | 90A | Three Phase | 90A | 1.6kV | 90A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VU068-08N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | Not Applicable | Standard | RoHS Compliant | 2000 | 800V | 68A | Module | Lead Free | 68A | Three Phase | 68A | 500μA @ 800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 111MT120KB | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | Non-RoHS Compliant | 2008 | /files/vishaysemiconductordiodesdivision-113mt80kb-datasheets-7748.pdf | MTK | 9 | yes | UL APPROVED | 8541.30.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 9 | NOT SPECIFIED | 3 | Not Qualified | R-XUFM-X9 | 3 PHASE BRIDGE, HALF-CONTROLLED, COMMON ANODE | ISOLATED | Three Phase | 110A | 1200V | SCR | 150mA | 1200V | 1.2kV | 20mA @ 1200V | |||||||||||||||||||||||||||||||||||||||||||||||
| GBPC1005/1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | Not Applicable | Standard | Non-RoHS Compliant | 1998 | /files/vishaysemiconductordiodesdivision-gbpc104e451-datasheets-3156.pdf | 50V | 3A | 4-Square, GBPC-1 | 21pF | Contains Lead | GBPC1 | 3A | Single Phase | 50V | 5μA @ 50V | 1V @ 1.5A | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BW511FS-YE | Sensata-Crydom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | Not Applicable | Standard | RoHS Compliant | 2002 | 12A | Module | Lead Free | Module | Single Phase | 12A | 12A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF005M/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2002 | /files/vishaysemiconductordiodesdivision-df005me345-datasheets-0587.pdf | 50V | 1A | 4-EDIP (0.300, 7.62mm) | 25pF | 8.51mm | 3.3mm | 6.5mm | Contains Lead | 4 | DF005 | 1 | DFM | 1A | 1.1V | 50A | 5μA | 50A | Single Phase | 50V | 5μA @ 50V | 1.1V @ 1A | 1A |
