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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KBU35005-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu3510g-datasheets-9733.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSFM-W4 | 400A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 1 | 35A | 50V | 10μA @ 50V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||
| GBU25005-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 350A | 1 | 4.2A | 50V | 5μA @ 50V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||
| TS50P05G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BU2006-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 240A | 1 | 3.5A | 600V | 5μA @ 600V | 1.05V @ 10A | 20A | ||||||||||||||||||||||||||||||||
| RS405GL-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/microcommercialco-rs404glbp-datasheets-0659.pdf | 4-SIP, RS-4L | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | RS405 | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 200A | 1 | 4A | 600V | 10μA @ 600V | 1.1V @ 3A | 4A | ||||||||||||||||||||||||||
| BU12065S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | 4 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | 3.4A | ISOLATED | SILICON | 150A | 5μA | 600V | Single Phase | 1 | 5μA @ 600V | 1.05V @ 6A | 12A | |||||||||||||||||||||||||||||||||
| GSIB2020-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib2080e345-datasheets-8918.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 7 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 3.5A | 240A | 10μA | ISOLATED | SILICON | 10μA | 200V | Single Phase | 1 | 200V | 10μA @ 200V | 1V @ 10A | |||||||||||||||||||||||||||
| GBU1502-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu1510g-datasheets-5208.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 240A | 1 | 15A | 200V | 10μA @ 200V | 1V @ 7.5A | 3.2A | ||||||||||||||||||||||||||||||||||
| KBU2508-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu2510g-datasheets-0906.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 400A | 1 | 25A | 800V | 10μA @ 800V | 1.1V @ 12.5A | 3.6A | |||||||||||||||||||||||||||||||||
| BU2008-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu2008m351-datasheets-0665.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 240A | 1 | 3.5A | 800V | 5μA @ 800V | 1.05V @ 10A | 20A | ||||||||||||||||||||||||||||||||
| GSIB2080N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib2080nm345-datasheets-0667.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | 1V | ISOLATED | SILICON | 800V | 240A | Single Phase | 1 | 3.5A | 800V | 10μA @ 800V | 1V @ 7.5A | 20A | |||||||||||||||||||||||||||||||
| GSIB1540N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib1580nm345-datasheets-8341.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | Single Phase | 300A | 1 | 3.5A | 400V | 10μA @ 400V | 950mV @ 7.5A | 15A | |||||||||||||||||||||||||||||||||
| BU15085S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | 3.4A | ISOLATED | SILICON | 200A | 5μA | 800V | Single Phase | 1 | 5μA @ 800V | 1.05V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||
| KBU2502-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu2510g-datasheets-0906.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 400A | 1 | 25A | 200V | 10μA @ 200V | 1.1V @ 12.5A | 3.6A | |||||||||||||||||||||||||||||||||
| BU12085S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | 4 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | 3.4A | ISOLATED | SILICON | 150A | 5μA | 800V | Single Phase | 1 | 5μA @ 800V | 1.05V @ 6A | 12A | |||||||||||||||||||||||||||||||||
| BU1506-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 200A | 1 | 3.4A | 600V | 5μA @ 600V | 1.05V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||
| BU12105S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | 4 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | 3.4A | ISOLATED | SILICON | 1000V | 150A | 5μA | 1kV | Single Phase | 1 | 5μA @ 1000V | 1.05V @ 6A | 12A | ||||||||||||||||||||||||||||||||
| KBU25005-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/comchiptechnology-kbu2510g-datasheets-0906.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | 400A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 1 | 25A | 50V | 10μA @ 50V | 1.1V @ 12.5A | 3.6A | ||||||||||||||||||||||||||||||||
| BU15105S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | Unknown | 4 | yes | UL RECOGNIZED | Tin | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 15A | 1.05V | 200A | 5μA | ISOLATED | SILICON | 200A | 5μA | 1kV | 200A | Single Phase | 15A | 1 | 5μA @ 1000V | 1.05V @ 7.5A | 3.4A | ||||||||||||||||||||
| GSIB15A40N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib15a80nm345-datasheets-0581.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | 4 | UL RECOGNIZED | unknown | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | ISOLATED | SILICON | Single Phase | 200A | 1 | 3.5A | 400V | 10μA @ 400V | 1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||
| GSIB620N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib640nm345-datasheets-0533.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 180A | 1 | 2.8A | 200V | 10μA @ 200V | 950mV @ 3A | 6A | ||||||||||||||||||||||||||||||||
| GBU2504-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 350A | 1 | 4.2A | 400V | 5μA @ 400V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||
| BU2508-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | No | e3 | 4 | Single | 1 | Bridge Rectifier Diodes | 3.5A | 1.05V | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 800V | 300A | Single Phase | 1 | 5μA @ 600V | 1.05V @ 12.5A | ||||||||||||||||||||||||||
| CBR1-D100S PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/centralsemiconductorcorp-cbr1d040str13pbfree-datasheets-9126.pdf | 4-SMD, Gull Wing | 4 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | DUAL | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PDSO-G4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 50A | 1 | 1A | 1kV | 10μA @ 1000V | 1.1V @ 1A | 1A | ||||||||||||||||||||||||||||||||||
| 2KPB005-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ROHS3 Compliant | 2008 | /files/microcommercialco-2kpb005bp-datasheets-0615.pdf | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJL2010-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/microcommercialco-gbjl2010bp-datasheets-0617.pdf | 4-SIP, GBJL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 240A | 1 | 20A | 1kV | 10μA @ 1000V | 1.05V @ 10A | 20A | |||||||||||||||||||||||||||||||
| GBU2501-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbu2508hf-datasheets-0576.pdf | 4-SIP, GBU | 4 | 1 Weeks | UL RECOGNIZED | NO | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 350A | 1 | 4.2A | 100V | 5μA @ 100V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||
| BU10085S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 120A | 1 | 3.2A | 800V | 5μA @ 800V | 1.05V @ 5A | 10A | |||||||||||||||||||||||||||||||||
| GSIB2040-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib2080e345-datasheets-8918.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 7 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 3.5A | 240A | 10μA | ISOLATED | SILICON | 10μA | 400V | Single Phase | 1 | 400V | 10μA @ 400V | 1V @ 10A | ||||||||||||||||||||||||||||
| GSIB15A80N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib15a80nm345-datasheets-0581.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | 4 | UL RECOGNIZED | unknown | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | ISOLATED | SILICON | 800V | Single Phase | 200A | 1 | 3.5A | 800V | 10μA @ 800V | 1V @ 7.5A | 15A |
