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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BU25H08-M3/A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | isoCink+™ | Through Hole | -55°C~175°C TJ | Tray | Standard | /files/vishaysemiconductordiodesdivision-bu25h06e3p-datasheets-9952.pdf | 4-SIP, BU | 52 Weeks | isoCINK+™ BU | Single Phase | 800V | 5μA @ 800V | 1.05V @ 12.5A | 3.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ4005G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-kbj406g-datasheets-9395.pdf | 4-SIP, KBJ | 25.2mm | 19.3mm | 9.7mm | 4 | 8 Weeks | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 4A | 1V | 120A | ISOLATED | SILICON | 5μA | 50V | 120A | Single Phase | 1 | 4A | 35V | 5μA @ 50V | 1V @ 2A | |||||||||||||||||||||||
| GBU1504-G | Comchip Technology | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu1510g-datasheets-5208.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | 240A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 1 | 15A | 400V | 10μA @ 400V | 1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||
| BU25065S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.5A | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 600V | Single Phase | 1 | 5μA @ 600V | 1.05V @ 12.5A | ||||||||||||||||||||||||||
| KBPC1001W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 240A | 1 | 10A | 100V | 10μA @ 100V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||
| BU25085S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.5A | 1.05V | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 800V | 300A | Single Phase | 25A | 1 | 5μA @ 600V | 1.05V @ 12.5A | |||||||||||||||||||||||
| KBPC10005W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 240A | 1 | 10A | 50V | 10μA @ 50V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||
| TS50P05GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||
| TS50P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| KBPC1506W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 300A | 1 | 15A | 600V | 10μA @ 600V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||
| BU10105S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 120A | 1 | 3.2A | 1kV | 5μA @ 1000V | 1.05V @ 5A | 10A | ||||||||||||||||||||||||||||||||||
| KBPC1504W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 400V | Single Phase | 300A | 1 | 15A | 400V | 10μA @ 400V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||
| GBJ2506-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbj250604g-datasheets-0724.pdf | 4-SIP, GBJ | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBJ2506 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 350A | 25A | 600V | 10μA @ 600V | 1V @ 12.5A | 25A | ||||||||||||||||||||||||||||||||||||||||
| BU2006-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 240A | 1 | 3.5A | 600V | 5μA @ 600V | 1.05V @ 10A | 20A | |||||||||||||||||||||||||||||||||
| GBJ2508-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbj2510hf-datasheets-0536.pdf | 4-SIP, GBJ | 1 Weeks | Single Phase | 800V | 5μA @ 800V | 1V @ 12.5A | 3.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6A-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbu6mbp-datasheets-0635.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU6A | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 175A | 1 | 6A | 50V | 5μA @ 50V | 1V @ 3A | 6A | ||||||||||||||||||||||||||||
| GSIB2060N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib2080nm345-datasheets-0667.pdf | 4-SIP, GSIB-5S | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | 1 | Bridge Rectifier Diodes | 1V | ISOLATED | SILICON | 600V | 240A | Single Phase | 1 | 3.5A | 600V | 10μA @ 600V | 1V @ 7.5A | 20A | ||||||||||||||||||||||||||||||||||||
| GSIB2040N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib2080nm345-datasheets-0667.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | 4 | Bridge Rectifier Diodes | ISOLATED | SILICON | Single Phase | 1 | 3.5A | 400V | 10μA @ 400V | 1V @ 7.5A | 20A | |||||||||||||||||||||||||||||||||||||||
| TS50P06G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GSIB2020N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib2080nm345-datasheets-0667.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 240A | 1 | 3.5A | 200V | 10μA @ 200V | 1V @ 7.5A | 20A | |||||||||||||||||||||||||||||||||||
| GBU8A-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbu8jbp-datasheets-0806.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU8A | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 200A | 1 | 8A | 50V | 5μA @ 50V | 1V @ 4A | 8A | ||||||||||||||||||||||||||||
| GBU15005-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu1510g-datasheets-5208.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | 220A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 240A | 1 | 15A | 50V | 10μA @ 50V | 1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||
| BU15105S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 200A | 1 | 3.4A | 1kV | 5μA @ 1000V | 1.05V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||
| TS50P06G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ610G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-kbj606g-datasheets-5084.pdf | 4-SIP, KBJ | 25.2mm | 19.3mm | 9.7mm | 4 | 31 Weeks | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | KBJ610 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 6A | 1V | 170A | ISOLATED | SILICON | 5μA | 1kV | 170A | Single Phase | 1 | 6A | 700V | 5μA @ 1000V | 1V @ 3A | |||||||||||||||||||||||
| TS50P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 12 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BU2010-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu2008m351-datasheets-0665.pdf | 4-SIP, BU | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 240A | 1 | 3.5A | 1kV | 5μA @ 1000V | 1.05V @ 10A | 20A | |||||||||||||||||||||||||||||||||
| BU25H06-M3/A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | isoCink+™ | Through Hole | -55°C~175°C TJ | Tray | Standard | /files/vishaysemiconductordiodesdivision-bu25h06e3p-datasheets-9952.pdf | 4-SIP, BU | 52 Weeks | isoCINK+™ BU | Single Phase | 600V | 5μA @ 600V | 1.05V @ 12.5A | 3.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GSIB1520N-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gsib1580nm345-datasheets-8341.pdf | 4-SIP, GSIB-5S | 4 | 7 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | Single Phase | 300A | 1 | 3.5A | 200V | 10μA @ 200V | 950mV @ 7.5A | 15A | |||||||||||||||||||||||||||||||||
| GBJ2506-04-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbj250604g-datasheets-0724.pdf | 4-SIP, GBJ | 12 Weeks | EAR99 | 8541.10.00.80 | NO | GBJ2506 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 350A | 25A | 600V | 10μA @ 600V | 1V @ 12.5A | 25A |
