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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TS50P07GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS50P06GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CBRSDSH2-100 TR13 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -50°C~125°C TJ | Cut Tape (CT) | 1 (Unlimited) | Schottky | ROHS3 Compliant | 2016 | /files/centralsemiconductorcorp-cbrsdsh2100tr13-datasheets-0880.pdf | 4-SMD, Gull Wing | 10 Weeks | EAR99 | 8541.10.00.80 | YES | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 110A | 2A | 100V | 50μA @ 100V | 700mV @ 2A | 2A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBU2504-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu2510g-datasheets-9809.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | 240A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 350A | 1 | 25A | 400V | 10μA @ 400V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||
| GBU1002 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2012 | /files/diodesincorporated-gbu1006-datasheets-1576.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | Lead Free | 4 | 9 Weeks | 3.404012g | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 10A | 1V | 220A | ISOLATED | SILICON | 5μA | 200V | 220A | Single Phase | 10A | 1 | 140V | 5μA @ 200V | 1V @ 5A | |||||||||||||||||||||||||
| KBPC1502W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 300A | 1 | 15A | 200V | 10μA @ 200V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||
| KBPC1508W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 300A | 1 | 15A | 800V | 10μA @ 800V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||
| TS50P07GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU2508-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu2510g-datasheets-9809.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 350A | 1 | 25A | 800V | 10μA @ 800V | 1V @ 12.5A | 4.2A | |||||||||||||||||||||||||||||||||||||||||
| BU2508-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-SIP, BU | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | 3.5A | ISOLATED | SILICON | 300A | 5μA | 800V | Single Phase | 1 | 5μA @ 600V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||
| GBJ2506-05-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbj250604g-datasheets-0724.pdf | 4-SIP, GBJ | 12 Weeks | EAR99 | 8541.10.00.80 | NO | GBJ2506 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 350A | 25A | 600V | 10μA @ 600V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||
| TS50P05GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ608-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-gbj6005f-datasheets-7114.pdf | 4-SIP, GBJ | 30.3mm | 24.5mm | 4.8mm | 4 | 9 Weeks | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 6A | 1V | 170A | ISOLATED | SILICON | 5μA | 800V | 170A | Single Phase | 1 | 6A | 560V | 5μA @ 800V | 1V @ 3A | ||||||||||||||||||||||||||||||
| KBPC1002W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 240A | 1 | 10A | 200V | 10μA @ 200V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||
| VS-KBPC1005 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | Non-RoHS Compliant | 1997 | /files/vishaysemiconductordiodesdivision-vskbpc604pbf-datasheets-0924.pdf | 3A | 4-Square, D-72 | 16.7mm | 6.35mm | 16.7mm | 4 | 14 Weeks | Unknown | 4 | EAR99 | No | UPPER | WIRE | Single | 4 | 3A | 1.1V | 55A | 10μA | SILICON | 10μA | 50V | Single Phase | 1 | 3A | 1kV | 10μA @ 50V | 1.1V @ 1.5A | |||||||||||||||||||||||||||||||||
| BU2506-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-SIP, BU | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | 3.5A | ISOLATED | SILICON | 300A | 5μA | 600V | Single Phase | 1 | 5μA @ 600V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||
| GBU25005-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/comchiptechnology-gbu2510g-datasheets-9809.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | 220A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 350A | 1 | 25A | 50V | 10μA @ 50V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||
| KBPC15005W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 300A | 1 | 15A | 50V | 5μA @ 50V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||
| GBU1008 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | /files/diodesincorporated-gbu1006-datasheets-1576.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | 4 | 9 Weeks | 3.404012g | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 10A | 1V | 220A | ISOLATED | SILICON | 5μA | 800V | 220A | Single Phase | 1 | 560V | 5μA @ 800V | 1V @ 5A | |||||||||||||||||||||||||||||
| BU20105S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.5A | 850mV | 240A | 5μA | ISOLATED | SILICON | 1000V | 240A | 5μA | 1kV | Single Phase | 20A | 1 | 5μA @ 1000V | 1.05V @ 10A | ||||||||||||||||||||||||||
| KBPC1501W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 300A | 1 | 15A | 100V | 5μA @ 1000V | 1.1V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||
| GBJ2506-03-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/comchiptechnology-gbj250604g-datasheets-0724.pdf | 4-SIP, GBJ | 12 Weeks | EAR99 | 8541.10.00.80 | NO | GBJ2506 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 350A | 25A | 600V | 10μA @ 600V | 1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||
| BU20065S-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-ESIP, BU-5S | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 240A | 1 | 3.5A | 600V | 5μA @ 600V | 1.05V @ 10A | 20A | |||||||||||||||||||||||||||||||||||||
| KBU3504-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu3510g-datasheets-9733.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSFM-W4 | 400A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 1 | 35A | 400V | 10μA @ 400V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||
| BU2510-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-SIP, BU | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | 3.5A | ISOLATED | SILICON | 1000V | 1000V | 300A | 5μA | 1kV | Single Phase | 1 | 5μA @ 1000V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||
| GBJ1010-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/comchiptechnology-gbj1004g-datasheets-0743.pdf | 4-SIP, GBJ | 4 | 12 Weeks | UL RECOGNIZED | NOT SPECIFIED | GBJ1010 | NOT SPECIFIED | 4 | R-PSFM-T4 | 10A | BRIDGE, 4 ELEMENTS | SILICON | 1000V | 1kV | Single Phase | 1 | 1kV | 10μA @ 1000V | 1.05V @ 5A | ||||||||||||||||||||||||||||||||||||||||||
| BU25085S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.5A | 1.05V | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 800V | 300A | Single Phase | 25A | 1 | 5μA @ 600V | 1.05V @ 12.5A | |||||||||||||||||||||||||||
| KBPC10005W-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-kbpc5010wg-datasheets-0987.pdf | 4-Square, KBPC-W | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | S-XUFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 240A | 1 | 10A | 50V | 10μA @ 50V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||
| TS50P05GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS50P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts50p07gd2g-datasheets-0969.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 50A |
