ZXMN6A08E6TA

ZXMN6A08E6TA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXMN6A08E6TA
  • Package: SOT-23-6
  • Datasheet: pdf
  • Stock: 7532
  • Description: ZXMN6A08E6TA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Manufacturer Package Identifier SOT26 (SC74R)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 80mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 2.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 459pF @ 40V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Rise Time 2.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.1 ns
Turn-Off Delay Time 12.3 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.8A
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.4mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXMN6A08E6TA Overview


A device's maximum input capacitance is 459pF @ 40V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device can conduct a maximum continuous current of [2.8A] according to its drain current.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12.3 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.6 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

ZXMN6A08E6TA Features


a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.3 ns

ZXMN6A08E6TA Applications


There are a lot of Diodes Incorporated ZXMN6A08E6TA applications of single MOSFETs transistors.

  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • AC-DC Power Supply
  • Synchronous Rectification
  • DC/DC converters
  • Lighting
  • Motor drives and Uninterruptible Power Supplies
  • Motor control
  • PFC stages, hard switching PWM stages and resonant switching
  • Power Management Functions
  • Load switching

In Stock

Please send RFQ , we will respond immediately.