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ZXMN20B28KTC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXMN20B28KTC
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1052
- Description: ZXMN20B28KTC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 17.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 2.75A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 358pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 5V |
| Rise Time | 76.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 57.1 ns |
| Turn-Off Delay Time | 44.7 ns |
| Continuous Drain Current (ID) | 2.3A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.78Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXMN20B28KTC Description
ZXMN20B28KTC is a 200v N-channel enhancement MOSFET. This MOSFET features low on-resistance, fast switching, and a high avalanche withstand capability, making it ideal for high-efficiency power management applications, such as SLIC line drivers for VoIP applications, Transformer driving switch, Power management functions, Motor control, and Uninterrupted power supply applications.
ZXMN20B28KTC Features
100% Unclamped Inductive Switch (UIS) test in production
High avalanche energy pulse withstand capability
Low gate drive voltage (Logic level capable)
Low input capacitance
Low on-resistance
Fast switching speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ZXMN20B28KTC Applications
SLIC line drivers for VoIP applications
Transformer driving switch
Power management functions
Motor control
Uninterrupted power supply
