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ZXM61N02FTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXM61N02FTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8227
- Description: ZXM61N02FTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 180mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Powers |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1.7A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 625mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 806mW |
| Turn On Delay Time | 2.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 930mA, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 4.5V |
| Rise Time | 4.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 4.2 ns |
| Turn-Off Delay Time | 7.8 ns |
| Continuous Drain Current (ID) | 1.7A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 700 mV |
| Height | 1.1mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXM61N02FTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 160pF @ 15V.The drain current is the maximum continuous current the device can conduct, and this device has 1.7A continuous drain current (ID).Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.When the device is turned off, a turn-off delay time of 7.8 ns occurs as the input capacitance charges before drain current conduction commences.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Using drive voltage (2.7V 4.5V), this device contributes to a reduction in overall power consumption.
ZXM61N02FTA Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 7.8 ns
ZXM61N02FTA Applications
There are a lot of Diodes Incorporated ZXM61N02FTA applications of single MOSFETs transistors.
- LCD/LED TV
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC-to-DC converters
- AC-DC Power Supply
- Battery Protection Circuit
- Industrial Power Supplies
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Telecom 1 Sever Power Supplies
- General Purpose Interfacing Switch
