ZVP4424A

MOSFET (Metal Oxide) P-Channel Bulk 9 Ω @ 200mA, 10V ±40V 200pF @ 25V 240V TO-226-3, TO-92-3 (TO-226AA)


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZVP4424A
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 9307
  • Description: MOSFET (Metal Oxide) P-Channel Bulk 9 Ω @ 200mA, 10V ±40V 200pF @ 25V 240V TO-226-3, TO-92-3 (TO-226AA) (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 9Ohm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -240V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating -200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 8ns
Drain to Source Voltage (Vdss) 240V
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Vgs (Max) ±40V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 40V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage -240V
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZVP4424A Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 200pF @ 25V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.With a drain-source breakdown voltage of -240V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -240V.As shown in the table below, the drain current of this device is 0.2A.It is [26 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 40V volts.In this case, the threshold voltage of the transistor is -1.4V, which means that it will not activate any of its functions when its threshold voltage reaches -1.4V.The drain-to-source voltage (Vdss) of this transistor needs to be at 240V in order to operate.By using drive voltage (3.5V 10V), this device helps reduce its overall power consumption.

ZVP4424A Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -240V voltage
the turn-off delay time is 26 ns
a threshold voltage of -1.4V
a 240V drain to source voltage (Vdss)

ZVP4424A Applications


There are a lot of Diodes Incorporated ZVP4424A applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Telecom 1 Sever Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • DC/DC converters
  • Micro Solar Inverter
  • Motor control
  • Uninterruptible Power Supply
  • General Purpose Interfacing Switch
  • Power Tools
  • Server power supplies

In Stock

Please send RFQ , we will respond immediately.