ZVP2106A

MOSFET (Metal Oxide) P-Channel Bulk 5 Ω @ 500mA, 10V ±20V 100pF @ 18V 60V TO-226-3, TO-92-3 (TO-226AA)


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZVP2106A
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 338
  • Description: MOSFET (Metal Oxide) P-Channel Bulk 5 Ω @ 500mA, 10V ±20V 100pF @ 18V 60V TO-226-3, TO-92-3 (TO-226AA) (Kg)

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SPECIFICATIONS

Parameters
Drain Current-Max (Abs) (ID) 0.28A
Drain to Source Breakdown Voltage -60V
Feedback Cap-Max (Crss) 20 pF
Height 6.51mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -280mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 18V
Current - Continuous Drain (Id) @ 25°C 280mA Ta
Rise Time 15ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 320mA
Threshold Voltage -3.5V
Gate to Source Voltage (Vgs) 20V

ZVP2106A Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 100pF @ 18V.The drain current is the maximum continuous current the device can conduct, and this device has 320mA continuous drain current (ID).With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.A device can conduct a maximum continuous current of [0.28A] according to its drain current.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3.5V threshold voltage. This transistor requires a drain-source voltage (Vdss) of 60V.This device uses no drive voltage (10V) to reduce its overall power consumption.

ZVP2106A Features


a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 12 ns
a threshold voltage of -3.5V
a 60V drain to source voltage (Vdss)

ZVP2106A Applications


There are a lot of Diodes Incorporated ZVP2106A applications of single MOSFETs transistors.

  • DC-to-DC converters
  • Industrial Power Supplies
  • LCD/LED/ PDP TV Lighting
  • PFC stages, hard switching PWM stages and resonant switching
  • LCD/LED TV
  • Uninterruptible Power Supply
  • Power Tools
  • Motor drives and Uninterruptible Power Supplies
  • AC-DC Power Supply
  • Motor Drives and Uninterruptible Power Supples

In Stock

Please send RFQ , we will respond immediately.