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MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 3 Ω @ 500mA, 10V ±20V 75pF @ 25V E-Line-3
- Manufacturer: Diodes Incorporated
- NO: 233-ZVNL110ASTZ
- Package: E-Line-3
- Datasheet:
- Stock: 5824
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 3 Ω @ 500mA, 10V ±20V 75pF @ 25V E-Line-3 (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | E-Line |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 3Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 320mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 700mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 700mW |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 320mA Ta |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 320mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZVNL110ASTZ Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 75pF @ 25V maximal input capacitance.This device's continuous drain current (ID) is 320mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Using drive voltage (5V 10V), this device helps reduce its power consumption.
ZVNL110ASTZ Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
ZVNL110ASTZ Applications
There are a lot of Diodes Incorporated ZVNL110ASTZ applications of single MOSFETs transistors.
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Telecom 1 Sever Power Supplies
- Lighting, Server, Telecom and UPS.
- PFC stages, hard switching PWM stages and resonant switching
- General Purpose Interfacing Switch
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- LCD/LED TV
- Motor drives and Uninterruptible Power Supplies
- Battery Protection Circuit
