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MOSFET (Metal Oxide) N-Channel Bulk 1.5 Ω @ 1.5A, 10V ±20V 100pF @ 25V TO-226-3, TO-92-3 (TO-226AA)
- Manufacturer: Diodes Incorporated
- NO: 233-ZVN4210A
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2131
- Description: MOSFET (Metal Oxide) N-Channel Bulk 1.5 Ω @ 1.5A, 10V ±20V 100pF @ 25V TO-226-3, TO-92-3 (TO-226AA) (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 1.5Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 450mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 700mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 700mW |
| Turn On Delay Time | 4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 450mA Ta |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 450mA |
| Threshold Voltage | 2.4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.45A |
| Drain to Source Breakdown Voltage | 100V |
| Height | 4.95mm |
| Length | 4.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZVN4210A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and this device has 450mA continuous drain current (ID).Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.As shown in the table below, the drain current of this device is 0.45A.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.Using drive voltage (5V 10V), this device helps reduce its power consumption.
ZVN4210A Features
a continuous drain current (ID) of 450mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
a threshold voltage of 2.4V
ZVN4210A Applications
There are a lot of Diodes Incorporated ZVN4210A applications of single MOSFETs transistors.
- LCD/LED/ PDP TV Lighting
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Micro Solar Inverter
- Lighting
- Industrial Power Supplies
- Solar Inverter
- DC/DC converters
- Motor control
- AC-DC Power Supply
- Power Management Functions
