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MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 4 Ω @ 1A, 10V ±20V 75pF @ 25V E-Line-3
- Manufacturer: Diodes Incorporated
- NO: 233-ZVN2110ASTZ
- Package: E-Line-3
- Datasheet:
- Stock: 1440
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 4 Ω @ 1A, 10V ±20V 75pF @ 25V E-Line-3 (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 230mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 700mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 700mW |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 320mA Ta |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 320mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 4Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZVN2110ASTZ Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 75pF @ 25V is its maximum input capacitance.This device's continuous drain current (ID) is 320mA, which represents the maximum continuous current it can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
ZVN2110ASTZ Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
ZVN2110ASTZ Applications
There are a lot of Diodes Incorporated ZVN2110ASTZ applications of single MOSFETs transistors.
- Load switching
- Motor control
- LCD/LED TV
- Uninterruptible Power Supply
- LCD/LED/ PDP TV Lighting
- Motor drives and Uninterruptible Power Supplies
- Lighting
- Synchronous Rectification
- General Purpose Interfacing Switch
- DC/DC converters
