VS-FA38SA50LCP

MOSFET (Metal Oxide) N-Channel Bulk 130m Ω @ 23A, 10V ±20V 6900pF @ 25V 420nC @ 10V 500V SOT-227-4, miniBLOC


  • Manufacturer: Vishay Semiconductor Diodes Division
  • NO: 884-VS-FA38SA50LCP
  • Package: SOT-227-4, miniBLOC
  • Datasheet: pdf
  • Stock: 8289
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 130m Ω @ 23A, 10V ±20V 6900pF @ 25V 420nC @ 10V 500V SOT-227-4, miniBLOC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 330 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 38A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 580 mJ
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, UL APPROVED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 420nC @ 10V
Rise Time 340ns
Drain to Source Voltage (Vdss) 500V

In Stock

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