VMO580-02F

MOSFET (Metal Oxide) N-Channel Bulk 3.8m Ω @ 430A, 10V ±20V 2750nC @ 10V Y3-Li


  • Manufacturer: IXYS
  • NO: 415-VMO580-02F
  • Package: Y3-Li
  • Datasheet: pdf
  • Stock: 12426
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 3.8m Ω @ 430A, 10V ±20V 2750nC @ 10V Y3-Li (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Y3-Li
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Series HiPerFET™
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 580A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number VMO
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 430A, 10V
Vgs(th) (Max) @ Id 4V @ 50mA
Current - Continuous Drain (Id) @ 25°C 580A Tc
Gate Charge (Qg) (Max) @ Vgs 2750nC @ 10V
Rise Time 500ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 500 ns
Turn-Off Delay Time 900 ns
Continuous Drain Current (ID) 580A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0038Ohm
Drain to Source Breakdown Voltage 200V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.