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ContactTSM020N04LCR RLG
MOSFET (Metal Oxide) N-Channel Digi-Reel® 2m Ω @ 27A, 10V ±20V 7942pF @ 20V 150nC @ 10V 40V 8-PowerTDFN
- Manufacturer: Taiwan Semiconductor Corporation
- NO: 799-TSM020N04LCR RLG
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 9314
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 2m Ω @ 27A, 10V ±20V 7942pF @ 20V 150nC @ 10V 40V 8-PowerTDFN (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Number of Terminations | 5 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 104W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2m Ω @ 27A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7942pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 170A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 27A |
| Drain-source On Resistance-Max | 0.0026Ohm |
| Pulsed Drain Current-Max (IDM) | 680A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 277 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 32 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
