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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.8mOhm @ 16A, 10V ±20V 2800pF @ 50V 33nC @ 10V 100V 8-PowerVDFN
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TPH8R80ANH,L1Q
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 5661
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.8mOhm @ 16A, 10V ±20V 2800pF @ 50V 33nC @ 10V 100V 8-PowerVDFN (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | U-MOSVIII-H |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 1.6W Ta 61W Tc |
| Element Configuration | Single |
| Power Dissipation | 61W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 32A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 32A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Input Capacitance | 2.8nF |
| Drain to Source Resistance | 7.4mOhm |
| Rds On Max | 8.8 mΩ |
| RoHS Status | RoHS Compliant |
