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MOSFET (Metal Oxide) N-Channel Tube 38mOhm @ 30.9A, 10V ±30V 6500pF @ 300V 180nC @ 10V 600V TO-3P-3, SC-65-3
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK62J60W,S1VQ
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 23
- Description: MOSFET (Metal Oxide) N-Channel Tube 38mOhm @ 30.9A, 10V ±30V 6500pF @ 300V 180nC @ 10V 600V TO-3P-3, SC-65-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-3P(N) |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | DTMOSIV |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 400W Tc |
| Element Configuration | Single |
| Power Dissipation | 400W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 30.9A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 3.1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 300V |
| Current - Continuous Drain (Id) @ 25°C | 61.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Rise Time | 58ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 310 ns |
| Continuous Drain Current (ID) | 61.8A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Input Capacitance | 6.5nF |
| FET Feature | Super Junction |
| Drain to Source Resistance | 33mOhm |
| Rds On Max | 38 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
