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ContactTK39N60W,S1VF
MOSFET (Metal Oxide) N-Channel Tube 65mOhm @ 19.4A, 10V ±30V 4100pF @ 300V 110nC @ 10V 600V TO-247-3
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK39N60W,S1VF
- Package: TO-247-3
- Datasheet:
- Stock: 53
- Description: MOSFET (Metal Oxide) N-Channel Tube 65mOhm @ 19.4A, 10V ±30V 4100pF @ 300V 110nC @ 10V 600V TO-247-3 (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | DTMOSIV |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 65mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Capacitance | 4.1nF |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 270W Tc |
| Element Configuration | Single |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 19.4A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 1.9mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
| Current - Continuous Drain (Id) @ 25°C | 38.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 200 ns |
| Continuous Drain Current (ID) | 38.8A |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.1nF |
| FET Feature | Super Junction |
| Drain to Source Resistance | 55mOhm |
| Rds On Max | 65 mΩ |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
