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ContactTK35A65W,S5X
MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 17.5A, 10V ±30V 4100pF @ 300V 100nC @ 10V 650V TO-220-3 Full Pack
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK35A65W,S5X
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 4487
- Description: MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 17.5A, 10V ±30V 4100pF @ 300V 100nC @ 10V 650V TO-220-3 Full Pack (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 30V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | DTMOSIV |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 50W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 70 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 2.1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
| Current - Continuous Drain (Id) @ 25°C | 35A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 150 ns |
| Continuous Drain Current (ID) | 35A |
