Products
Manufacturer
RFQ
NEWS
ContactTK28N65W,S1F
MOSFET (Metal Oxide) N-Channel Tube 110mOhm @ 13.8A, 10V ±30V 3000pF @ 300V 75nC @ 10V 650V TO-247-3
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK28N65W,S1F
- Package: TO-247-3
- Datasheet:
- Stock: 2658
- Description: MOSFET (Metal Oxide) N-Channel Tube 110mOhm @ 13.8A, 10V ±30V 3000pF @ 300V 75nC @ 10V 650V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | DTMOSIV |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 230W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 13.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.6mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
| Current - Continuous Drain (Id) @ 25°C | 27.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 27.6A |
| Input Capacitance | 3nF |
| Rds On Max | 110 mΩ |
| RoHS Status | RoHS Compliant |
