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MOSFET (Metal Oxide) N-Channel Tube 290mOhm @ 8.5A, 10V ±20V 2050pF @ 300V 32nC @ 10V 800V TO-220-3 Full Pack
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK17A80W,S4X
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 23610
- Description: MOSFET (Metal Oxide) N-Channel Tube 290mOhm @ 8.5A, 10V ±20V 2050pF @ 300V 32nC @ 10V 800V TO-220-3 Full Pack (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| Operating Temperature | 150°C |
| Packaging | Tube |
| Series | DTMOSIV |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 45W Tc |
| Power Dissipation | 45W |
| Turn On Delay Time | 58 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 850μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 300V |
| Current - Continuous Drain (Id) @ 25°C | 17A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 17A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 800V |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 250mOhm |
| Height | 18.1mm |
| RoHS Status | RoHS Compliant |
