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ContactTK100L60W,VQ
MOSFET N CH 600V 100A TO3P(L)
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK100L60W,VQ
- Package: TO-3PL
- Datasheet:
- Stock: 2884
- Description: MOSFET N CH 600V 100A TO3P(L)(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 125 ns |
| Turn-Off Delay Time | 690 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 30V |
| FET Feature | Super Junction |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | DTMOSIV |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 18mOhm |
| Capacitance | 15nF |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 797W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 15000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 360nC @ 10V |
| Rise Time | 130ns |
