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ContactTK100A10N1,S4X
MOSFET (Metal Oxide) N-Channel Tube 3.8m Ω @ 50A, 10V ±20V 8800pF @ 50V 140nC @ 10V 100V TO-220-3 Full Pack
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK100A10N1,S4X
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 5508
- Description: MOSFET (Metal Oxide) N-Channel Tube 3.8m Ω @ 50A, 10V ±20V 8800pF @ 50V 140nC @ 10V 100V TO-220-3 Full Pack (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 45W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Turn On Delay Time | 59 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| Rise Time | 32ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 140 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Avalanche Energy Rating (Eas) | 222 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | U-MOSVIII-H |
| Published | 2014 |
